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Templated direct growth of ultra-thin double-walled carbon nanotubes
摘要： Double-walled carbon nanotubes (DWCNTs) combined the advantages of multi-walled (MW-) and single-walled (SW-) CNTs can be obtained by transforming the precursors (e.g. fullerene, ferrocene) into thin inner CNTs inside SWCNTs as templates. However, this method is limited since the DWCNT yield is strongly influenced by the filling efficiency (depending on the type of the filled molecules), opening and cutting the SWCNTs, and the diameter of the host SWCNTs. Therefore, it cannot be applied to all types of SWCNT templates. Here we show a universal route to synthesize ultra-thin DWCNTs via making SWCNTs stable at high temperature in vacuum. This method applies to different types of SWCNTs including metallicity-sorted ones without using any precursors since the carbon sources were from the reconstructed SWCNTs and the residue carbons. The resulting DWCNTs are with high quality and the yield of inner tubes is comparable to/higher than that of the DWCNTs made from the transformation of ferrocene/fullerene peapods.
关键词： Double-walled carbon nanotubes,ultra-thin,high-temperature annealing,DWCNTs,SWCNTs
更新于2025-11-14 15:16:37
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Recovery kinetics in high temperature annealed AlN heteroepitaxial films
摘要： Based on the experimental dislocation annihilation rates, vacancy core diffusion-controlled dislocation climb was found as a dominant recovery mechanism in high temperature annealing of AlN heteroepitaxial films. Dislocation annihilation mechanisms via dislocation glide (with or without kinks) and vacancy bulk diffusion were found to be less significant. Cross-slip was also ruled out as a possible mechanism as a majority of dislocations in heteroepitaxial AlN films are threading edge dislocations. While dislocation climb through both vacancy bulk and core diffusion could offer a plausible explanation of the recovery process, the activation energy for the vacancy core diffusion-controlled dislocation climb was relatively low (4.3 ± 0.1 eV), as estimated from an Arrhenius plot. The validity of the vacancy core diffusion mechanism was also supported by a large vacancy mean free path (～240 nm), which was comparable to the sample thickness and thus the average dislocation length. Finally, the experimentally observed dislocation density reduction as a function of the annealing temperature and time was in good agreement with the vacancy core diffusion mechanism.
关键词： dislocation annihilation,high temperature annealing,AlN heteroepitaxial films,recovery kinetics,vacancy core diffusion
更新于2025-09-23 15:19:57
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Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy
摘要： The effect of high temperature annealing (HTA) on crystalline quality improvement of h-BN films grown on sapphire substrates has been investigated. It is found that BN grown using conventional molecular beam epitaxy is disordered due to the growth temperature below 1000 °C. By annealing at a temperature of 1700 °C, thermodynamically stable crystalline h-BN could be obtained at wafer scale, where diffusion of atoms in the as-grown BN film is enhanced and the structural defect density decreases. The crystalline h-BN has been confirmed by x-ray diffraction, Raman scattering, and atomic force microscopy measurements. This work demonstrates that HTA is a simple and effective way to achieve wafer-scale crystalline h-BN films, which have numerous potential applications in next-generation two-dimensional devices and flexible III-nitride optoelectronic devices.
关键词： crystalline quality,molecular beam epitaxy,sapphire substrate,h-BN films,high temperature annealing
更新于2025-09-19 17:13:59
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From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
摘要： Porous GaN has many unique merits, such as a large specific surface area, adjustable bandgap and excellent optical performance. Here, we develop a simple and effective method for preparing porous GaN single crystals through high temperature annealing. The effects of different annealing temperatures on the porous structure, crystal quality and optical properties of GaN are investigated. The relationship model of annealing temperatures, times and GaN porous structures is summarized. An ultraviolet (UV) photodetector based on porous GaN is fabricated. The effects of porous structures on the performance of the GaN UV photodetector are investigated for the first time. We found that the appropriate GaN porous structure can improve the performance of the photodetector. A possible performance enhancement mechanism has been proposed. Based on the high performance and simple fabrication process, porous GaN crystal can be an excellent candidate for UV photodetectors.
关键词： optical properties,crystal quality,UV photodetector,high temperature annealing,porous GaN
更新于2025-09-16 10:30:52
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Comparison of HPHT and LPHT annealing of Ib synthetic diamond
摘要： Defect transformations in type Ib synthetic diamond annealed at a temperature of 1870 °C under stabilizing pressure (HPHT annealing) and in hydrogen atmosphere at normal pressure (LPHT annealing) are compared. Spectroscopic data obtained on the samples before and after annealing prove that the processes of nitrogen aggregation and formation of nitrogen-nickel complexes are similar in both cases. Essential differences between HPHT and LPHT annealing are stronger graphitization at macroscopic imperfections and enhanced lattice distortions around point defects in the latter case. The lattice distortion around point defects is revealed as a considerable broadening of zero-phonon lines of "soft" (vacancy-related) optical centers. It was found that LPHT annealing may enhance overall intensity of luminescence of HPHT-grown synthetic diamonds.
关键词： nitrogen aggregation,graphitization,low pressure high temperature annealing,synthetic type Ib diamond,spectral broadening,high pressure high temperature annealing
更新于2025-09-10 09:29:36