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Temperature-Dependent Electrical Characteristics of β-Ga <sub/>2</sub> O <sub/>3</sub> Diodes with W Schottky Contacts up to 500°C
摘要： The development of thermally stable contacts capable of high temperature operation are necessary for Ga2O3 high power rectifiers. We have measured the electrical characteristics of sputter-deposited W Schottky contacts with Au overlayers for reducing sheet resistance on n-type Ga2O3 before and after device operation up to 500°C. Assuming thermionic emission is dominant, the extracted barrier height decreases with measurement temperature from 0.97 eV (25°C) to 0.39 eV (500°C) while showing little change from its initial value of 0.97 eV after cooling down from each respective operation temperature. The room temperature value is comparable to that obtained by determining the energy difference between binding energy of the Ga 3d core level and the valence band of the Ga2O3 when W is present, 0.80 ± 0.2 eV in this case. The Richardson constant was 54.05 A.cm?2.K?2 for W and the effective Schottky barrier height at zero bias (eφb0) was 0.92 eV from temperature-dependent current-voltage characteristics. The temperature coefficient for reverse breakdown voltage was 0.16 V/K for W/Au and 0.12 V/K for Ni/Au. The W-based contacts are more thermally stable than conventional Ni-based Schottkies on Ga2O3 but do show evidence of Ga migration through the contact after 500°C device operation.
关键词： electrical characteristics,thermal stability,high temperature operation,Ga2O3,Schottky contacts
更新于2025-09-23 15:23:52
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Organic Solar Cells Based on Small Molecule Donor and Polymer Acceptor Operating at 150 ?°C
摘要： Organic Solar Cells Based on Small Molecule Donor and Polymer Acceptor Operating at 150 oC. Inorganic or organic solar cells always operate at temperature lower than 100 oC and are not suitable for operating at high temperature. In this work, using blends of small molecular donor and polymer acceptor (MD/PA-type) as the active layers, we develop efficient and stable organic solar cells (OSCs), which can operate at temperature up to 150 oC. The device exhibits a power conversion efficiency (PCE) of 9.51%, which is the highest value reported to date for MD/PA-type OSCs. After thermal treatment at 150 oC for 72 hours, the device can retain 84% of its initial PCE value. This superior device stability at high temperature is attributed to the high phase transition temperatures of the two materials in the MD/PA-type active layer. This work suggests a new advantage of high-temperature tolerance for OSCs.
关键词： Power Conversion Efficiency,Small Molecule Donor,Organic Solar Cells,Polymer Acceptor,High Temperature Operation
更新于2025-09-23 15:21:01
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Experimental evaluation of silicon photonics transceiver operating at 120°C for 5G antenna array systems
摘要： The use of optical transceivers in antenna array system applications requires reliable operation at high temperature. The experimental characterisation of a silicon photonics transceiver operating in a harsh environment with temperatures up to 120°C is presented and discussed. The transceiver was placed inside a climatic chamber and it was fed by an external depolarised light source. The bit error rate was measured, and the impacts on transmission performances were analysed and discussed, including reliability aspects. The authors believe that silicon photonics transceivers with an optimised design and with improvements in the optical connector and fibre adhesive technology are suitable for this kind of applications.
关键词： silicon photonics,antenna array systems,transceiver,5G,high temperature operation
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Bochum, Germany (2019.7.16-2019.7.18)] 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - New approach for the simulation of bent and crumpled antennas on a flexible substrate
摘要： First-ever 28 nm embedded split-gate MONOS (SG-MONOS) ?ash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from C to 170 C as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code ?ash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric ?lms between metal interconnect layers by three times. TASPEC is particularly useful for a data ?ash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code ?ash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code ?ash macros, and peak power of EMI noise is reduced by 19 dB.
关键词： high reliability,spread spectrum clock generation,word-line overdrive,Automotive application,split-gate MONOS(SG-MONOS),embedded ?ash memory,time dependent dielectric breakdown,high-temperature operation,Fast random read operation
更新于2025-09-23 15:19:57
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Efficient and Higha??Brightness Broad Area Laser Diodes Designed for Higha??Temperature Operation
摘要： Efficient and High-Brightness Broad Area Laser Diodes Designed for High-Temperature Operation. Advantages of semiconductor laser diodes as efficient high-power laser light sources applicable at elevated ambient temperatures. Semiconductor laser diodes, manufactured as single emitters or laser bars, are highly desired light sources for direct material processing as well as optical pumping of fiber and solid-state lasers. Laser diodes feature high optical output power and efficiency, long lifetimes, low maintenance and consequently low cost of ownership. To improve the usability and extend the application spectrum of high-power laser diodes, relaxed cooling requirements – without compromise in laser performance and lifetime – are required. Therefore, great development efforts are made, both in externally and internally funded research projects, to push the maximum permissible operating temperature of such semiconductor laser diodes to higher levels.
关键词： efficiency,semiconductor laser diodes,high-power laser,brightness,high-temperature operation
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Computed tomography dataset analysis for stereotaxic neurosurgery navigation
摘要： First-ever 28 nm embedded split-gate MONOS (SG-MONOS) ?ash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from C to 170 C as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code ?ash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric ?lms between metal interconnect layers by three times. TASPEC is particularly useful for a data ?ash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code ?ash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code ?ash macros, and peak power of EMI noise is reduced by 19 dB.
关键词： high-temperature operation,time dependent dielectric breakdown,Automotive application,high reliability,spread spectrum clock generation,word-line over-drive,split-gate MONOS(SG-MONOS),embedded ?ash memory,Fast random read operation
更新于2025-09-19 17:13:59
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Low Power Consumption Distributed-Feedback Quantum Cascade Lasers Operating in Continuous-Wave Mode above 90°C at λ ～ 7.2 μm
摘要： We report on the design and fabrication of ?? ～ 7.2 ??m distributed feedback quantum cascade lasers for very high temperature cw operation and low electrical power consumption. The cw operation is reported above 90°C. For a 2-mm-long and 10-??m-wide laser coated with high-reflectivity on the rear facet, more than 170 mW of output power is obtained at 20°C with a threshold power consumption of 2.4 W, corresponding to 30 mW with a threshold power consumption of 3.9 W at 90°C. Robust single-mode emission with a side-mode suppression ratio above 25 dB is continuously tunable by the heat sink temperature or injection current.
关键词： high temperature operation,Distributed feedback quantum cascade lasers,low power consumption,continuous-wave mode
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Dual-Lasing Channel of a High-Temperature Terahertz Quantum Cascade Laser
摘要： Terahertz (THz) quantum cascade lasers (QCLs) are powerful coherent light sources covering the frequency range from 1.2 to 5.4 THz, but still suffer from operation temperatures below 200 K. Here, we show the results of a barrier height study for a three-well active region based on GaAs/AlxGa1-xAs heterostructure with changing Al concentrations from x = 12% to 24%. Higher barriers reduce the thermal leakage of electrons at elevated temperatures and reduce the coupling of the electron wave functions. The calculated energy difference of these two electronic states (1.75 meV) agrees with the separation of the two regions in the measured frequency spectrum at 3.4 and 3.8 THz (ΔE = 1.65 meV) at low temperature. With this technique we expect to improve the maximum operation temperature and to optimize broadband devices which are necessary for frequency combs and mode-locked devices.
关键词： Quantum Cascade Laser,High-Temperature Operation,Dual-lasing Channel,Terahertz
更新于2025-09-12 10:27:22
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Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
摘要： Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.
关键词： high-temperature operation,gallium nitride (GaN),analytical model,high electron mobility transistors (HEMTs),threshold voltage (Vth) stability
更新于2025-09-04 15:30:14
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Semiconducting polymer blends that exhibit stable charge transport at high temperatures
摘要： Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.
关键词： semiconducting polymer blends,charge transport,thermal stability,high-temperature operation,organic semiconductors
更新于2025-09-04 15:30:14