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oe1(光电查) - 科学论文

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  • Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

    摘要： An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects.

    关键词： AlGaN,radiation recombination,convex quantum wells,electron leakage,deep ultraviolet laser diode,hole injection efficiency

    更新于2025-09-23 15:19:57

  • Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes

    摘要： The external quantum ef?ciency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection ef?ciency and better electron con?nement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.

    关键词： external quantum efficiency,electron confinement,GaInN,hole injection efficiency,light-emitting diodes,p-type ZnO

    更新于2025-09-16 10:30:52