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Excimer Laser Induced Spatially Resolved Formation and Implantation of Plasmonic Particles in Glass
摘要： Metallic nanoparticles are important building blocks for plasmonic applications. The spatially defined arrangement of these nanoparticles in a stable glass matrix is obtained here by nanosecond excimer laser irradiation at 193 nm. Two approaches are addressed: (1) Laser induced formation of particles from a dopant material pre-incorporated in the glass, (2) Particle formation and implantation by irradiation of material pre-coated on top of the glass. Silver nanoparticles are formed inside Ag+ doped glass (method 1). Gold nanoparticles are implanted by irradiation of gold coated glass (method 2). In the latter case, with a few laser pulses the original gold film disintegrates into particles which are then embedded in the softened glass matrix. A micron sized spatial resolution (periodic arrangements with 2 μm period) is obtained in both cases by irradiating the samples with an interference beam pattern generated by a phase mask. The plasmonic absorption of the nanoparticles leads to a contrast of the optical density between irradiated and non-irradiated lines of up to 0.6.
关键词： interference pattern,laser implantation,plasmonic nanoparticles
更新于2025-11-21 11:18:25
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Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms-Range Flash Lamp Annealing
摘要： With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal-oxide-semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond-range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms-range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 10^7 in the n-GaAs:Zn case.
关键词： GaAs,ion implantation,shallow junctions,flash lamp annealing
更新于2025-09-23 15:23:52
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Diffusion of Ar atoms implanted in a TiO2 matrix studied with Temperature Programmed Out-Diffusion?
摘要： The diffusion of noble gas argon in the near-surface region of rutile TiO2 has been explored with the Temperature Programmed Out-Diffusion (TPOD) method. The Ar atoms were deposited in a several-nanometer-deep layer of the single-crystal TiO2(110) surface by bombardment with 1–5 keV energy Ar ions. Subsequently, in the TPOD experiments this sample was heated at a linear rate and the out-diffusion of argon was monitored with a mass-spectrometer. Surface conditions were probed with Auger Electron Spectroscopy (AES) and Low-Energy Electron Diffraction (LEED). The experimental results were analyzed with the aid of numerical simulations. The measurements showed a dependence of the Ar diffusion rates on the concentration of buried argon and composition of the surface layer. The kinetic parameters of Ar diffusion in pristine rutile TiO2 were estimated as Ea = 104 kJ/mol and D0 = 6 ? 10?9 m2/s. A distinctive diffusion regime, related to the rock salt TiO phase formation, were identified.
关键词： Sputtering,TiO2,Low-energy ion implantation,Solid diffusion,Ar
更新于2025-09-23 15:23:52
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Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN
摘要： Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied.
关键词： Radiation damage,Photoluminescence,Collision cascade density,Time-resolved PL,Charge carrier diffusion,Ion implantation,GaN
更新于2025-09-23 15:23:52
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Enhanced nonlinear optical properties of LiNbO3 crystal embedded with CuZn alloy nanoparticles by ion implantation
摘要： LiNbO3 crystal, as a typical nonlinear optical material, has attracted considerable interest in photonic device applications. However, LiNbO3 shows weak nonlinear optical responses due to its low laser damage threshold. Herein, the optical nonlinearities of LiNbO3 are enhanced by inducing CuZn alloy nanoparticles (NPs). The structural and optical properties of LiNbO3 with embedded NPs were investigated in detail. The third-order nonlinear susceptibilities of CuZn: LiNbO3 nanocomposites exhibit nearly 4 orders of magnitude greater than the untreated LiNbO3 due to the localized surface plasmon resonance effect. Furthermore, the nanocomposites suffer conversion from reverse-saturable absorption to saturable absorption compared with the pure LiNbO3. This feature makes the nanocomposites a potential saturable absorber leading to the realization of efficient pulse lasers.
关键词： Ion implantation,Optical nonlinearities,CuZn alloy nanoparticles,Nonlinear materials
更新于2025-09-23 15:23:52
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Tuning the electrical properties of graphene oxide by nitrogen ion implantation: Implication for gas sensing
摘要： Tailoring the electrical properties of graphene oxide (GO) is one of the important requirements for its application in future electronic devices. A modified Hummer’s method was employed in the preparation of GO and spray coated on glass substrates, subsequently drying at 60 °C for 6 h. The as prepared samples were implanted with 100 keV nitrogen ions at the fluences of 1E15, 5E15 and 1E16 ions/cm2. A peak shift to higher 2θ in XRD pattern indicates the reduction of GO to rGO after N ion implantation. The intensity ratio of G and D bands (IG/ID) for GO derived from the Raman analysis increased from 0.97 to 1.02 after implantation (1E16 ions/cm2). The EDS analysis confirms the implantation of N ions in GO. The electrical conductivity improved as a function of fluence, and observed to be high for the sample of 1E16 ions/cm2, and is tested for methanol sensing. Concentration dependent methanol sensing shows 5.9% response for 300 ppm. Above results show that ion implantation is a promising method for controlled reduction of GO for tuning the electrical properties.
关键词： Ion implantation,Gas sensing,Graphene oxide,Reduced graphene oxide
更新于2025-09-23 15:23:52
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Damage and photoluminescence analysis of RbTiOPO4 crystals induced by europium ion implantation
摘要： RbTiOPO4 crystals were implanted by 400keV europium (Eu) ions to a fluence of 5×1015 ions/cm2 at room temperature. Additive isochronal thermal annealing processes were performed subsequently in Ar atmosphere at 600°C and 700°C for 30min. The lattice damage and elemental distributions in the crystals were investigated by Rutherford Backscattering Spectrometry (RBS) and RBS in channelling mode (RBS/C) using 1.4 MeV and 2.1 MeV He+ ions. RBS/C results reveal that Eu implantation led to lattice damage and formation of amorphous layer at the surface. Thermal annealing at 600°C results in partial damage recovery. The increase of annealing temperature caused further decrease of damage and Eu to diffuse to both sides. The photoluminescence (PL) measurements of Eu implanted RbTiOPO4 were performed as a function of annealing temperature, the results indicated the defects induced by implantation reduce the luminescence activation. The luminescence performance was improved significantly after annealing, a strong main peak appeared at 612 nm, and the other peak distributions coincide with the excitation characteristics of Eu. The profiles of PL spectra of annealed sample remain almost the same at temperatures from 5K to 300K, suggesting good luminescence stability of the Eu doped RbTiOPO4 crystal.
关键词： Ion implantation,Europium,Damage,Photoluminescence
更新于2025-09-23 15:23:52
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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
摘要： Results of electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in combination with wet chemical etching has been employed for the profiling. After the implantation, a typical n+-n–p structure was observed and three electron species were detected: (a) low-mobility electrons in the 400-500 nm-thick top radiation-damaged n+-layer, (b) mid-mobility electrons also originating from radiation damage and spreading down to 700-900 nm, and (c) high-mobility electrons located in the n-region extending beyond 700-900 nm and down to the p-n junction. A comparison of the extracted electron parameters with the arsenic profile obtained with secondary-ion mass spectroscopy as well as with the defect pattern obtained with transmission electron microscopy allowed for identification of the origin of all the three electron species.
关键词： HgCdTe,arsenic implantation,defects,electrical profiling
更新于2025-09-23 15:23:52
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Optical and Microstructural Investigation of Heavy B-Doping Effects in Sublimation-Grown 3C-SiC
摘要： In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000oC have been cross-correlated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects.
关键词： photoluminescence,defects,3C-SiC,STEM,implantation,boron doping
更新于2025-09-23 15:22:29
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Microscopic analysis of an opacified OFT CRYL? hydrophilic acrylic intraocular lens
摘要： A 51-year-old patient underwent posterior vitrectomy with perfluoropropane gas injection, phacoemulsification, and implantation of an Oft Cryl? hydrophilic acrylic intraocular lens (IOL) because of traumatic retinal detachment and cataract in the right eye. On the first postoperative day, gas was filling the anterior chamber because of patient’s non-compliance in terms of head positioning, and was reabsorbed within one week. Eight months later, the patient returned complaining of a significant decrease in vision. IOL opacification was noticed by slit-lamp examination. The lens was explanted to undergo gross and light microscopic analysis. The lens was also stained with the alizarin red method for calcium identification. Light microscopic analysis confirmed the presence of granular deposits, densely distributed in an overall circular pattern in the central part of the lens optic. The granules stained positive for calcium. This is the first case of the opacification of this type of hydrophilic lens. Surgeons should be aware of this potential postoperative complication, and the use of hydrophilic IOLs should be avoided in procedures involving intracameral gas because of the risk of IOL opacification.
关键词： Hydrophilic contact lens,Lens implantation,Vitrectomy,Intraocular lens,Capsule opacification
更新于2025-09-23 15:22:29