- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Driving force of crystallisation based on diffusion in the boundary and the integration layers
摘要： Crystal growth rates are notoriously difficult to predict and even experimental data are often inconsistent. By allowing for mass and energy diffusion through the molecular and thermal layers surrounding a growing crystal and for the heat effect of crystallization, a new model of crystal growth from solution is proposed and applied to crystallization of potassium chloride from aqueous solution. The driving force for crystal growth was calculated using the solubility at the interface temperature in contrast to the conventional one based on bulk temperature. A positive heat effect at the crystal interface as well as the resistances to the mass and energy transfer processes to and from the crystal surface can reduce the conventional driving force for crystal growth by more than 20%.
关键词： Crystal growth rate,Boundary layer,Driving force,Mathematical modelling,Integration (Desolvation) layer
更新于2025-09-23 15:22:29
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Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration
摘要： We have fabricated large area integrated top-gate nMISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate nMISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.
关键词： Top gate,MISFET,Transition metal di-chalcogenide,Sputtering,Passivation,Molybdenum disulfide,Large area integration
更新于2025-09-23 15:21:21
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Collective Die Direct Bonding for Photonic on Silicon
摘要： Optoelectronic devices usually needs heterostructure integration with III/V devices integrated on silicon circuits. As throughput placement are more important than placement precision, collective die to wafer bonding is an interesting process for these applications. Moreover as light should be propagated through the bonding interface, minimizing interfacial material is mandatory. Collective direct bonding of die to wafer is then proposed. The bonding yield as well as the first placement accuracy is evaluated.
关键词： III/V integration,Collective Die Direct Bonding,Silicon Photonics,Photonic on Silicon
更新于2025-09-23 15:21:21
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Fabrication and characterization of a low-cost interposer with an intact insulation layer and ultra-low TSV leakage current
摘要： The application of a Si interposer is hindered by its complicated manufacturing process, high cost and some reliability challenges such as through silicon via (TSV) leakage. In this paper, a fabrication approach using a Si interposer is proposed, which can simplify the manufacturing process significantly and reduce the cost by more than 40%. Benefiting from the simplified process, the TSV insulation layer stays intact during the whole manufacturing process, an ultra-low TSV leakage current can be obtained. To evaluate the performance and reliability of the interposer, test samples consisting of 136 TSVs are designed and fabricated. A series of tests are carried out to verify the electrical insulating performance and reliability of the interposer. Under the bias voltage of 5 V, the TSV leakage current is 2.05 × 10?14 A, which is much lower than the usual value in the range of 10?12 –10?9 A. The yield of daisy chains exceeds 91.66% and that of individual TSVs is more than 99.91%. All the interposer samples have successfully passed the thermal cycle test, and the resistance variation of each individual pathway is within 5% after 200 cycles.
关键词： interposer,insulation layer,TSV leakage current,3D-IC integration
更新于2025-09-23 15:21:21
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<i>(Invited)</i> 3D Integration Processes for Advanced Sensor Systems and High-Perfomance RF Components
摘要： Sensor systems are the key elements of today’s automotive, health care, environmental and Internet-of-Things (IoT) applications. By using MEMS sensors data like physical or electrical parameters in production equipment, gas concentration in the environment or chemical parameters in fluids can be recorded, digitized and transferred for further processing e.g. by means of big data algorithms in a server or cloud environment. For realizing such systems advanced sensors, which are in many cases based on sophisticated nano-technologies have to be combined with standard CMOS devices, which digitize the analogue sensor signals and optimize the overall data acquisition and data transmission. 3D integration processes are most suitable for high performant and reliable integration of sensor functions and electronic processing and simultaneously minimize the footprint, weight and form-factor of the sensor/IC product. 3D integration processes as fine-pitch Trough-Silicon-Vias (TSV) technology and various wafer bond technologies will be introduced in this paper.
关键词： 3D integration,MEMS sensors,wafer bond technologies,TSV technology,heterogeneous integration
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Tel-Aviv, Israel (2019.11.4-2019.11.6)] 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Overview of High Frequency Electronics Integration Concepts for Gap waveguide based High Gain Slot Antenna Array
摘要： This paper presents an overview of different low-loss microstrip to waveguide transition designs suitable for integrating millimeter wave electronics to a gap waveguide based slot array. Typically, E-plane probe type of transitions are widely used at mmWave frequency range to couple RF signal from a TX/RX MMIC to the waveguide section. H-plane split-blocks are avoided due to leakage problem from tiny slits formed by imperfect metal connections. On the other hand, the traditional slot arrays are built using H-plane split blocks. This makes it very challenging to integrate electronics and other passive components such as diplexer filter directly to a high gain planar antenna array. To overcome this above mentioned problem, we propose to use low-loss H-plane transitions to integrate RF electronics with the multi-layer gap waveguide based slot array. We demonstrate a completely packaged front-end at E-band, showing the potential of the gap waveguide technology to build a very compact full-duplex wireless system.
关键词： E-plane transition,Slot arrays,Full-duplex,Integration and packaging,Gap waveguide
更新于2025-09-23 15:21:01
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Thiazolo[5,4- <i>d</i> ]thiazole-based organic sensitizers with improved spectral properties for application in greenhouse-integrated dye-sensitized solar cells
摘要： Organic photosensitizers especially designed for producing semitransparent dye-sensitized solar cells (DSSCs) for greenhouse integration were prepared by introduction of different heterocyclic moieties into the thiazolo[5,4-d]thiazole-molecular scaffold. The aim was that of improving their light absorption capability in the green part of the visible spectrum while maintaining a good transparency in the blue and red regions, where the photosynthetic response is maximized. A short and efficient synthetic approach, featuring two consecutive C-H activation reactions in a one-pot procedure as key steps, was used. Based on their spectroscopic and electrochemical characterization, two of dyes prepared appeared especially suitable for greenhouse-integrated photovoltaics. The corresponding semitransparent DSSCs yielded 5.6-6.1% power conversion efficiencies, which were largely superior to those provided by other organic dyes previously proposed for the same application.
关键词： organic photosensitizers,light absorption,photovoltaic efficiency,dye-sensitized solar cells,greenhouse integration,thiazolo[5,4-d]thiazole,transparency
更新于2025-09-23 15:21:01
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Femtosecond Lasera??Etched MXene Microsupercapacitors with Doublea??Side Configuration via Arbitrary Ona?? and Througha??Substrate Connections
摘要： The capacitance of microsupercapacitors (MSCs) can double if both sides of substrates are used to construct MSCs. Nevertheless, achieving electric connections of MSCs through substrates is a challenge due to the difficulty in precisely positioning each MSC couple that has two of the same MSCs units on two sides. In this work, taking advantage of the synchronous etching on both sides of transparent polyethylene terephthalate substrates by femtosecond laser pulses, a double-sided configuration is attained with high precision in the alignment of back-to-back MSC couples and versatile double-side MSCs are realized via arbitrary on- and through-substrate connections of MXene MSC units. The MXene double-side MSC fabricated by the series connection of 12 spiral pattern MXene MSC units with interdigital electrodes of 10 μm width interspace can output a large working voltage of 7.2 V. Additionally, femtosecond laser etching brings the transformation of MXene into titania near-etched edges with a lateral distance less than 1 μm. Such a small laser-affected area has little influence on the capacitive performance, which is one of advantages for femtosecond laser over conventional lasers. This research is valuable for one-step manufacturing of highly integrated MSCs in the field of miniaturized energy storage systems.
关键词： double-sided,microsupercapacitors,femtosecond laser etching,MXene MSCs,MSCs,high integration
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Mitigation of the Variability of a PV Fleet via Geographical Dispersion and Energy Storage Systems on the Reunion Island Non-Interconnected Grid
摘要： In this paper, the geographical dispersion of PV installations and Energy Storage System (ESS) are studied to smooth PV production on Reunion Island. Despite the small area of the Island, the results show that with dispersion at the total grid scale, the variability driven by weather conditions (unpredictable variability) is almost removed. Then a centralized EES management at grid scale and a few large EES units could mitigate the variability even further with a relative low cost.
关键词： Photovoltaic systems,grid integration,ramps mitigation,geographical dispersion
更新于2025-09-23 15:21:01
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Controlled Quantum-Dot Formation in Atomically-Engineered Graphene Nanoribbons Field-Effect Transistors
摘要： Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size (< 50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.
关键词： graphene nanoribbons,Coulomb blockade,molecular spectroscopy,device integration,Raman spectroscopy
更新于2025-09-23 15:21:01