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Dual Management of Electrons and Photons to Get High-Performance Light Emitting Devices Based on Si Nanowires and Si Quantum Dots with Al <sub/>2</sub> O <sub/>3</sub> -Ag Hybrid Nanostructures
摘要： Silicon quantum dot (Si QD)-based light emitting devices are fabricated on Si nanowire (Si NW) arrays. Through inserting Al2O3-Ag hybrid nanostructures (Al2O3-Ag HNs) between Si NWs and Si QDs, both photoluminescence (PL) and electroluminescence (EL) are remarkably enhanced compared to the control sample. The PL enhancement can be mainly attributed to passivation effect of Al2O3 to p-type Si NWs and enlarged absorption cross-section due to the local surface plasmon resonance effect of Ag nanoparticles. The EL intensity is enhanced by 14.9-fold at the same injection current under a lower applied voltage, which may result from the high injection efficiency of electrons and the promoted waveguide effect of nanowire structures with Al2O3-Ag HNs. It is demonstrated that light emitting device performances can be well improved by careful management of both electrons and photons via controlling the interface conditions of Si NWs/Si QDs.
关键词： hybrid nanostructures,silicon nanowires,light emitting devices,silicon quantum dots
更新于2025-11-21 11:01:37
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Utilization of Ternary Europium Complex for Organic Electroluminescent Devices and as a Sensitizer to Improve Electroluminescence of Red-Emitting Iridium Complex
摘要： Two new lanthanide complexes [Ln(hfaa)3(Py-Im)] [hfaa = hexafluoroacetylacetone, Py-Im = 2-(2-pyridyl)benzimidazole and Ln = Eu(III) (1) and Tb(III) (2)] were synthesized and characterized. An X-ray crystal structure determination confirms that complex 1 is eight-coordinate with a distorted trigonal dodecahedral geometry. It shows typical vivid red Eu(III) emission in the solid state, in solution, and in a polymer matrix. The observed lifetime (τobs) of complex 1 in the solid state, in dichloromethane (DCM) solution, and in thin films is 833.01, 837.95, and 626.16?715.69 μs, respectively, with a photoluminescence quantum yield QEuL ≈ 33% in DCM solution. Complex 2 displays a yellowish-green emission in the solid state (τobs ≈ 36.99 μs), while a near white-light emission in solution (x; 0.2574: y; 0.3371) and in thin films. Therefore, it is a potential candidate for generating single-component white light-emitting materials for solid-state lighting applications. The kinetic scheme for modeling energy-transfer processes shows that the main donor state for 1 is the ligand triplet state (T1) and that energy transfer occurs to both the 5D1 (56.55%) and 5D0 (40.58%) levels. We fabricated a series of single- and double-layer organic light-emitting devices using complex 1. The luminance of the optimized double-layer electroluminescence (EL) device was 373 cd/m2 with very low turn-on voltage of ～4.2 V. Complex 1 was further utilized as a sensitizer to improve the EL of a red-emitting iridium complex PQ2Ir(dpm) (PQ = phenylquinoly-N,C2′, dpm = dipivaloylmethane). The codoped device achieved a maximum brightness and maximum current efficiency (ηc) of 93 224 cd/m2 and 36.38 cd/A, respectively.
关键词： electroluminescence,organic light-emitting devices,photoluminescence,energy transfer,lanthanide complexes
更新于2025-11-20 15:33:11
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Strategies towards rational design of gold(iii) complexes for high-performance organic light-emitting devices
摘要： Gold(iii) complexes are attractive candidates as phosphorescent dopants in organic light-emitting devices for high-luminance full-colour displays. However, no data on the stability of such devices have been reported to date. Through rational molecular design and synthesis, we have successfully generated a new class of cyclometalated gold(iii) C^C^N complexes with tunable emission colours spanning from sky-blue to red. These complexes exhibit high photoluminescence quantum yields of up to 80% in solid-state thin films, excellent solubility and high thermal stability. Solution-processable and vacuum-deposited organic light-emitting devices based on these complexes operate with external quantum efficiencies of up to 11.9% and 21.6%, respectively, and operational half-lifetimes of up to 83,000 h at 100 cd m?2.
关键词： operational stability,phosphorescent dopants,organic light-emitting devices,cyclometalated,gold(iii) complexes,C^C^N complexes
更新于2025-11-19 16:56:35
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Transparent Conductive Materials (Materials, Synthesis, Characterization, Applications) || Metallic Oxides (ITO, ZnO, SnO <sub/>2</sub> , TiO <sub/>2</sub> )
摘要： The material class of transparent conductive oxides (TCOs) combines two seemingly contradictory physical properties: high optical transmittance in the visible and near-infrared (NIR) spectral range (like insulators) and high electrical conductivity (like metals). These two key properties make TCO materials very well suited for transparent thin film electrodes for thin film solar cells, flat panel displays, light-emitting devices, or heated windows.
关键词： ZnO,light-emitting devices,SnO2,Transparent Conductive Oxides,thin film electrodes,ITO,solar cells,TiO2,flat panel displays,TCOs
更新于2025-09-23 15:21:21
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Circularly Polarized Rooma??Temperature Phosphorescence and Encapsulation Engineering for MOFa??Based Fluorescent/Phosphorescent WLEDs
摘要： Optical materials with circularly polarized luminescence and room temperature phosphorescence currently attract great attention owing to their unique optoelectronic properties. Herein, via the coordination-induced assembly strategy, a homochiral metal–organic framework (MOF) 1 with high stability and porosity is successfully synthesized by using the achiral triphenylamine-based molecule as the building block. Remarkably, MOF 1 shows circularly polarized luminescence and phosphorescence at room temperature simultaneously, also with excellent anisotropic optical properties. Furthermore, MOF 1 can serve as a nanocontainer to construct dye-encapsulated host–guest systems. Importantly, the multicolor emissions including white-light emission can be achieved. The corresponding color rendering index and correlated color temperature values of light emitting device are 73 and 5541 K, when using dye-loaded MOF 1?RhB 10 (CIE: 0.33, 0.33) as single-phase white light-emitting phosphor. This study first reports circularly polarized phosphorescence based on MOF without precious metals under ambient conditions, and also is first time for phosphorescent polarized materials with high porosity. These results will open up a new pathway to the design of porous chiroptical materials and white-light materials.
关键词： circularly polarized luminescence,host–guest system,room temperature phosphorescence,white light emitting devices,metal–organic frameworks
更新于2025-09-23 15:21:01
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with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission
摘要： Despite rapid progress in the power-conversion efficiency of Pb-based perovskite solar cells, both the long-term instability and Pb toxicity are still the main challenges for their commercial applications. Here, by first-principles GW calculations, we find three kinds of two-dimensional (2D) 111-type Pb-free In-based halide perovskites of the form Cs3In2X9 (X = Cl, Br, I) as promising alternatives to the star material CH3NH3PbI3 (MAPbI3) because of the following excellent electronic, optical, and transport properties: (i) The 2D In-based halide perovskites are environmentally friendly lead-free materials. (ii) Compared with MAPbX3, they have greater structural stability. (iii) As energetic photovoltaic materials, 2D Cs3In2I9 perovskites are direct-band-gap semiconductors with optimal band gaps from 1.25 eV (trilayer) to 1.47 eV (monolayer). (iv) The 2D Cs3In2X9 perovskites have ideal band structures for solid-state lighting with a wide direct-optical-band-gap range (approximately 0.94–3.54 eV), covering the whole visible-light region, and light electron (heavy hole) effective mass, which will directly enhance the defect-insensitive emission efficiency due to the localization of holes. Particularly, Cs3In2BrxCl9?x has a suitable direct optical band gap for highly desired blue emission. (v) The absorption coefficient of Cs3In2X9 is up to 7 × 104 cm?1, which is between that of GaAs (104 cm?1) and that of MAPbI3 (105 cm?1). (vi) The estimated power-conversion efficiency in Cs3In2I9 reaches 28%, which is close to that of MAPbI3 (30%). These findings pave a way for designing nontoxic, stable, and high-performance photovoltaic and light-emitting devices.
关键词： light-emitting devices,photovoltaics,halide perovskites,lead-free,two-dimensional,first-principles calculations
更新于2025-09-23 15:19:57
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Prolonged Lifetime in Nanocrystal Light-Emitting Diodes Incorporating MoS <sub/>2</sub> -Based Conjugated Polyelectrolyte Interfacial Layer as an Alternative to PEDOT:PSS
摘要： Colloidal semiconductor nanocrystals (NCs), and recently nanoplatelets (NPLs), owing to their efficient and narrowband luminescence, are considered as frontier materials for the light-emitting diode (LED) technology. NC-LEDs typically incorporate interfacial layers as charge regulators to ensure charge balancing and high performance. In this communication, we show the prolongation of the lifetime of multilayer solution-processed NC-LEDs by combining a self-doped conductive conjugated polyelectrolyte and exfoliated molybdenum disulfide (MoS2) flakes as an alternative to PEDOT:PSS. The ink features a neutral pH and a tunable hydrophobicity that mainly results in a remarkable stability of LEDs, using CdSe/CdZnS NPLs.
关键词： di-chalcogenides,colloidal nanoplatelets,interfacial layers,light-emitting devices,conjugated polyelectrolytes
更新于2025-09-23 15:19:57
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Improved Efficiency of All-Inorganic Quantum-Dot Light-Emitting Diodes via Interface Engineering
摘要： As the charge transport layer of quantum dot (QD) light-emitting diodes (QLEDs), metal oxides are expected to be more stable compared with organic materials. However, the efficiency of metal oxide-based all-inorganic QLEDs is still far behind that of organic–inorganic hybrid ones. The main reason is the strong interaction between metal oxide and QDs leading to the emission quenching of QDs. Here, we demonstrated nickel oxide (NiOx)-based all-inorganic QLEDs with a maximum current efficiency of 20.4 cd A?1 and external quantum efficiency (EQE) of 5.5%, which is among the most efficient all-inorganic QLEDs. The high efficiency is mainly attributed to the aluminum oxide (Al2O3) deposited at the NiOx/QDs interface to suppress the strong quenching effect of NiOx on the QD emission, together with the molybdenum oxide (MoOx) that reduced the leakage current and facilitated hole injection, more than 300% enhancement was achieved compared with the pristine NiOx-based QLEDs. Our study confirmed the effect of decorating the NiOx/QDs interface on the performance enhancement of the all-inorganic QLEDs.
关键词： all-inorganic,high efficiency,NiOx,light-emitting devices,quantum dots
更新于2025-09-23 15:19:57
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Phenothiazine dioxide-containing derivatives as efficient hosts for blue, green and yellow thermally activated delayed fluorescence OLEDs
摘要： By conjugating 10-phenyl-10H-phenothiazine-5,5-dioxide (2PTO) with aromatic amine substituents (PhCz and DMACMN), three novel host materials namely 10-(9-phenyl-9H-carbazol-3-yl)-10H-phenothiazine 5,5-dioxide (3CzNPTO), (10-(4-(9H-carbazol-9-yl)phenyl)-10H-phenothiazine 5,5-dioxide (9CzNPTO) and 10-(4-(9,9-dimethylacridin-10(9H)-yl)-2,5-dimethylphenyl)-10H-phenothiazine 5,5-dioxide (DMACMNPTO) were designed and synthesized. DMACMNPTO with thermally activated delayed fluorescence (TADF) feature exhibited the bipolar characteristic resulting from the completely separated HOMO/LUMO distribution. Using DMACMNPTO as a host for TADF emitters, the devices showed a maximum external quantum efficiencies (EQEmax), current e?ciency (CEmax) and power e?ciency (PEmax) of 18.3%, 33.3 cd/A and 37.4 lm/W in the blue-emitting diode, 18.6%, 49.1 cd/A and 47.2 lm/W in the green-emitting diode, and 19.1%, 59.2 cd/A and 66.0 lm/W in the yellow-emitting diode, respectively. These results corroborated the potential of phenothiazine dioxide-containing derivatives as host materials in a sequence of colors TADF-OLEDs.
关键词： phenothiazine dioxide,Organic light-emitting devices,thermally activated delayed fluorescence,host
更新于2025-09-19 17:13:59
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Size-controlled excitonic effects on electronic and optical properties of Sb <sub/>2</sub> S <sub/>3</sub> nanowires
摘要： In this work, the electronic and optical properties of one-dimensional (1D) Sb2S3 nanowires (NWs) with different sizes are investigated using first-principles calculations. The indirect–direct band transition of Sb2S3 NWs can be tuned effectively by the NW size and various uniaxial strains. In the Sb2S3 NWs, the quantum confinement effects result in wider bandgaps while the significantly enhanced electron–hole interaction that is expected to produce excitonic bound states generates a bandgap narrowing. The exciton binding energies for the Sb2S3 NWs are predicted by the effective masses of electrons and holes to lie in the range of 0–1 eV, which are larger than that of bulk Sb2S3, suggesting that excitons in Sb2S3 NWs may bind possible defects to promote luminescence. The size-controlled absorption edge blueshift and redshift of Sb2S3 NWs suggest that Sb2S3 NWs may be promising in the applications of nanoscale light emitting devices.
关键词： optical properties,first-principles calculations,quantum confinement effects,light emitting devices,electronic properties,exciton binding energies,Sb2S3 nanowires
更新于2025-09-16 10:30:52