研究目的
Investigating the enhancement of photoluminescence (PL) and electroluminescence (EL) in silicon quantum dot (Si QD)-based light emitting devices through the insertion of Al2O3-Ag hybrid nanostructures (Al2O3-Ag HNs) between silicon nanowires (Si NWs) and Si QDs.
研究成果
The insertion of Al2O3-Ag HNs between Si NWs and Si QDs significantly enhances both PL and EL intensities in light emitting devices. The enhancement is attributed to the passivation effect of Al2O3, the LSPR effect of Ag nanoparticles, improved injection efficiency, and promoted waveguide effect. This approach offers a new path to improve Si-based luminescence for optoelectronic integration.
研究不足
The study does not explore the optimization of Al2O3 thickness for further improvement of device performance, and the coupling between LSPs and internal emission light of Si QDs does not happen as proved by absorption and PL spectra.
1：Experimental Design and Method Selection
The study involves the fabrication of Si QD-based light emitting devices on Si NW arrays with the insertion of Al2O3-Ag HNs to enhance PL and EL. The methodology includes the use of metal-assisted chemical etching for Si NW fabrication, atomic layer deposition (ALD) for Al2O3 coating, and sputtering for Ag layer deposition.
2：Sample Selection and Data Sources
Samples include bare Si NW, Si NW/Al2O3, Si NW/Ag, and Si NW/Al2O3/Ag substrates. Data sources include PL and EL spectra, absorption spectra, and time-resolved PL (TRPL) measurements.
3：List of Experimental Equipment and Materials
Equipment includes an Oxford OpAL ALD system for Al2O3 deposition, a F.S.E. magnetron sputtering system for Ag layer sputtering, and a Shimadzu UV-3600 spectrophotometer for absorption measurements. Materials include p-type Si wafers, Al2O3, Ag, and Si QDs.
4：Experimental Procedures and Operational Workflow
The procedure involves the fabrication of Si NWs, deposition of Al2O3 and Ag layers, preparation of Si/SiO2 multilayers and n-type a-Si monolayer, annealing to form Si QDs, and the fabrication of light emitting devices with Al/p-type Si NW/Al2O3/Ag/Si QDs/n-type Si/ITO structures.
5：Data Analysis Methods
Data analysis includes fitting decay curves from TRPL measurements with a function to deduce the average lifetime, and finite different time domain (FDTD) simulations to understand the LSPR effect on Si QD luminescence.
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