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Mechanisms of adhesion degradation at the photovoltiac module's cell metallization-encapsulant interface
摘要： Adhesion measurements and chemical characterization of the encapsulant/silver metallization interface of a photovoltaic (PV) module through temperature, humidity, and voltage bias exposures were conducted. Results demonstrate two independent degradation mechanisms: (a) with voltage bias, the ionic conduction of Na+ ions through the encapsulant results in the formation of sodium silicate at the silver metallization surface, thereby weakening that interface and (b) with moisture ingress, dissociation of the silane bonding to silver in the silver oxide similarly weakens this interface resulting in significantly lower debond energies.
关键词： photovoltaic module,screen printing,reliability,encapsulation,degradation,metallization
更新于2025-09-23 15:22:29
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[IEEE 2018 13th International Congress Molded Interconnect Devices (MID) - Wu?rzburg (2018.9.25-2018.9.26)] 2018 13th International Congress Molded Interconnect Devices (MID) - Applications of Three Dimensional Laser Induced Metallization Technology with Polymer Coating
摘要： A fully developed three dimensional laser induced metallization (LIM) on molded interconnect devices (MIDs) is widely used on various products. The target substrate is sprayed with a special thin layer (50 μm) polymer coating first, and heated at 80°C to cure. Then using laser to define the pattern of conductors and induce the catalyst in the special polymer layer. After the electroless copper plating, the pattern is metallized. The whole process can be fully copy again on layer-by-layer to achieve the idea of multi-layer. For the high feasibility on any complex surface and material, such as glass, plastic, ceramic, etc., the LIM technology can be used for vary kind of products. In this paper, the LIM technology has applied on QR code stickers, 2G/3G/4G all-in-one compact antenna, mm-wave antenna, built-in antenna on mobile phone case, multi-layer NFC antenna, and humanoid robot finger. The QR code can be patterning on a thin film of 100 um and with a great flexibility. In addition, the return loss of 2G/3G/4G all-in-one compact antenna reaches the 3:1 VSWR standard, and the radiation efficiency is larger than 60% within the operation frequency. The built-in antenna on mobile phone case can reduce the waste of space and strongly secure the antenna from detachment. The LIM technology applied on the ceramic substrate can successfully fabricate a high directionality 38GHz mm-wave antenna and with above 10dBi of array gain, average efficiency up to 50%, and bandwidth up to 2 GHz. Furthermore, the multi-layer NFC antenna can successfully reduce the size and reach the maximum read distance of 3 cm. Using the same idea of multi-layer, the capacitive tactile sensor that can sense both normal and shear force is placed on humanoid robot finger to provide the tactile ability. The products described above will be briefly introduced in this paper and related testing results will be mentioned.
关键词： Antenna,Multilayer,3D-MID,Polymer Coating,Laser Induced Metallization
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Reproducing the a??Framinga?? by a Sequential Stress Test
摘要： The “Framing” (local discoloration along cell edges) was induced by a simple sequential accelerated stress test (consisting of hygrothermal- and UV-stressors) applied to the PV modules with high OTR (oxygen transmission rate) backsheet, irrespective of the inclusion of UV-absorber in poly(ethylene-co-vinyl acetate) (EVA) encapsulant. UV-fluorescence imaging of the PV modules suggests that the spatially-inhomogeneous degradation of EVA material under UV-irradiating conditions is correlated to this “Framing” indicating an underlying common mechanism. These findings would contribute to the development of test procedures to broadly mimic the actual failures observed in fielded PV.
关键词： snail trail,metallization,framing,photovoltaic (PV) module,ultraviolet (UV)-induced degradation
更新于2025-09-23 15:21:01
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An investigation on determinants of silver paste metallization contact performance on crystalline silicon solar cells
摘要： Since the application of silver (Ag) electrodes is of vital importance to the power output of crystalline silicon (c-Si) solar cells, the factors affecting Ag paste metallization contact performance on Si wafers need to get well understood. Herein, the correlation of Ag/Si contact resistivity and glasses used in Ag paste was studied comprehensively. Here taken for exemplification are three types of glass samples used in Ag paste, because the application of them can result in obvious differences in the contact interface characteristics as well as in the contact resistivity. It was found that the factors affecting contact resistivity include the formation of Ag colloids in the glass phase, the doping concentration in the contacted Si surface, and the fixed charge density and defect states density at the interface. In terms of these issues, the key functions and mechanisms of glasses used in Ag paste are elucidated, and also their effects on electrical performance of cells are discussed in this article.
关键词： glass frit,metallization contact,contact resistivity,crystalline silicon solar cells,silver paste
更新于2025-09-23 15:21:01
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Excess Random Laser Action in Memories for Hybrid Optical/Electric Logic
摘要： To surmount the scalability limitations of the nano-electronics industry, the invention of resistance random access memory (RRAM) has drawn considerable attention in recent years for being a new-era memory. Nevertheless, the data transmission speed of RRAM is confined by virtue of its sequential reading nature. To improve upon this weakness, a hybrid optical/electric memory with ION/IOFF ratio up to 105 and laser-level optical signal is proposed. The device was engineered through an adroit design of integrating a random laser (RL) into the conducting bridge random access memory (CBRAM). According to the electrochemical metallization (ECM) effect of CBRAM, agglomerative silver nanoparticles form in the insulating layer during the ON/OFF switching process, which can serve as scattering centers. By adding CdSe/ZnS quantum dots (QDs) as gain medium, a random laser system is obtained. Due to the quantum confinement effect, the device also features spectral tunable signal feedback by modulating the size of the QDs. In this study, devices with two different sizes of QDs are demonstrated such that a multiple-bits AND gate logic can be achieved. The innovation behind this RL-ECM memory might facilitate a key step toward the development of ultrahigh speed information technology.
关键词： RRAM,AND gate logic,random laser,electrochemical metallization effect,CdSe/ZnS colloidal quantum dots
更新于2025-09-23 15:19:57
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Solar Cells || Review on Metallization in Crystalline Silicon Solar Cells
摘要： Solar cell market is led by silicon photovoltaics and holds around 92% of the total market. Silicon solar cell fabrication process involves several critical steps which affects cell efficiency to large extent. This includes surface texturization, diffusion, antireflective coatings, and contact metallization. Among the critical processes, metallization is more significant. By optimizing contact metallization, electrical and optical losses of the solar cells can be reduced or controlled. Conventional and advanced silicon solar cell processes are discussed briefly. Subsequently, different metallization technologies used for front contacts in conventional silicon solar cells such as screen printing and nickel/copper plating are reviewed in detail. Rear metallization is important to improve efficiency in passivated emitter rear contact cells and interdigitated back contact cells. Current models on local Al contact formation in passivated emitter rear contact (PERC) cells are reviewed, and the influence of process parameters on the formation of local Al contacts is discussed. Also, the contact mechanism and the influence of metal contacts in interdigitated back contact (IBC) cells are reviewed briefly. The research highlights on metallization of conventional screen printed solar cells are compared with PERC and IBC cells.
关键词： interdigitated back contact cells,silicon solar cells,passivated emitter rear contact cells,metallization,process flows
更新于2025-09-23 15:19:57
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Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories
摘要： Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low-power consumption, because they show current–voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI3) perovskites with temperature-tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultra-low operating voltages (< 0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial applications of HP-based devices.
关键词： valence change mechanism,electrochemically metallization,all-inorganic halide perovskite,lead-free halide perovskite,resistive switching memory
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - Chengdu (2018.3.26-2018.3.28)] 2018 IEEE International Conference on Computational Electromagnetics (ICCEM) - A Compact Graphene-Based Six-Way Power Divider
摘要： Because of the nature of multilayered structure and their metal characteristics, it is difficult to conduct failure analysis on multilayer-metal-packaged power devices with abnormal thermal characteristics using conventional techniques. In order to overcome this challenge, a systematic solution is proposed. Firstly, the failure cause of abnormal thermal response for power devices is identified as the problem of heat dissipation through electrical tests and analysis of diode forward voltage (VSD) curves. Secondly, specific failure sites of power devices were located by the structure function analysis and the X-CT test. Finally, the failure site was analyzed by physical failure analysis techniques, and the specific failure cause was validated and further analyzed by microscopic observations and EDS. It was found that the oxidation of back metallization led to the formation of solder voids which resulted in the above failure.
关键词： Multilayered structure,Oxidation of back metallization,Thermal response,Power devices
更新于2025-09-19 17:15:36
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Completely aqueous route for metallization of structural polymeric materials in micro-electro-mechanical systems
摘要： A one-step aqueous diazonium-based process has been proved e?cient with respect to the covalent grafting of aminophenyl layers onto KMPR photoresist polymer. In contact with acidic palladium chloride solution for only a few minutes, the positively charged protonated aminophenyl groups on the modi?ed KMPR surface can electrostatically immobilize PdCl4 2? complexes. This KMPR surface functionalized with palladium-aminophenyl complex activators enables initialize the subsequent autocatalytic deposition of nickel (electroless nickel plating) and leads to a formation of adhesive nickel-boron ?lm onto KMPR substrate. Our proposed green chemistry strategy for the metallization of KMPR photoresist polymer via the diazonium reduction suggests an opportunity to bene?t from the incomparable physico-chemical properties of KMPR by integrating it within MEMS structures. The obtained 60 nm thick and compact nickel?boron alloy (93:7 by weight), evidenced through SEM, AFM and XPS techniques, can be used as a conductive seed layer for direct electrolytic deposition of copper. Consequently, a vacuum-free process for copper ?lling of mechanical features etched inside the KMPR layer has been demonstrated.
关键词： Metallization of structural polymers,One-step amination,Nickel seed layer,Green chemistry plating,Micro-electro-mechanical systems
更新于2025-09-19 17:15:36
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Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds
摘要： Experimental data on studying ohmic contacts based on single-layer and multilayer metallizations on GaN and (In, Al, Ga)N solid solutions are analyzed. The contact resistance of the Ti/Al/Mo/Au and Ti/Al/Mo/W/Au metallizations on undoped GaN is studied. The dependences of the contact resistance on the GaN surface treatment before the metallization and on the metallization annealing regimes are investigated.
关键词： gallium nitride,surface treatment,(AlInGa)N solid solutions,ohmic contacts,metallization,charge neutrality level
更新于2025-09-19 17:15:36