- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks
更新于2025-09-19 17:13:59
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Facile enhancement of optical sensitivity in GaN ultraviolet photodetectors by using in-situ plano-convex polymer lens
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Solution-processed ultrathin SnO <sub/>2</sub> passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Solar Cells
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Numerical modeling and experimental realization of wide bandgap ZnTe-based solar cells for semi-transparent PV application
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion
更新于2025-09-19 17:13:59
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[IEEE 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Portland, OR, USA (2018.11.13-2018.11.14)] 2018 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP) - Frequency Agile Photonic Front-End for Wideband Transmission and Reception
摘要： We have developed and tested a 0-45 GHz frequency agile photonic front-end for up- and down-conversion of signals with >800 MHz instantaneous bandwidth, <1 us switching speed, and low end-to-end latency. The 3U OpenVPX system has been tested in a TRL6 demonstration.
关键词： millimeter-wave photonics,photonic front-ends,pulsed photonic links,microwave photonics
更新于2025-09-09 09:28:46