研究目的
Investigating the feasibility of InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) as photonic frequency converters for future broadband optical and wireless communication systems.
研究成果
The feasibility of the InP-HEMT and G-FET as a photonic frequency double-mixing conversion device for future broadband optical and wireless communication systems was examined. Superior intrinsic RF performance of the G-FET was found throughout the experiment, although the extrinsic RF performance is yet to be improved.
研究不足
The measured responsivities of both InP-HEMT and G-FET are very low, by two to three orders of magnitude, compared with state-of-the-art MMW photomixers and/or photodiodes. The transistors have neither a dedicated photo-absorption layer nor a waveguide structure for the optical interface.
1：Experimental Design and Method Selection:
The study exploits optoelectronic properties and three-terminal functionalities of InP-HEMTs and G-FETs to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band.
2：Sample Selection and Data Sources:
High-quality bilayer epitaxial graphene was thermally grown on a C-face semi-insulating 4H-SiC(000–1) for G-FETs, and InP-based HEMTs were fabricated with InAlAs/InGaAs/InP material systems.
3：List of Experimental Equipment and Materials:
Optical frequency comb generator, UTC-PD photomixer module, F-band waveguide-type probe head, RF spectrum analyzer.
4：Experimental Procedures and Operational Workflow:
The photomixed dual optical carrier laser beam is incident from the back side via an objective lens. The RF data signal is introduced to the gate terminal pad on the chip via an F-band waveguide probe head. The IF data is picked up via a coaxial probe head and introduced to an RF spectrum analyzer.
5：Data Analysis Methods:
The conversion gain and the corresponding responsivity were analyzed to evaluate the performance of the photonic frequency conversion.
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