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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • electron-transparent membranes
  • micropump
  • field emission electron source
  • ion source
  • ion mobility spectrometry
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Wroclaw University of Science and Technology
209 条数据
?? 中文（中国） ▾

  • Improved charge transfer, mobility and morphology for high performance panchromatic organic photodetectors by adding PC71BM in P3HT:IEICO-4F

    摘要： High performance of panchromatic organic photodetectors (OPDs) with a wide spectral response ranged from 300 to 1000 nm were realized through adding [6,6]-phenyl-C71-butyric acid methylester (PC71BM) fullerene as an electron acceptor into the polymer donor of poly (3-hexylthiophene) (P3HT) and the small molecular non-fullerene acceptor of 2, 2′-((2Z,2′Z)-(((4, 4, 9, 9-tetrakis(4-hexylphenyl)-4, 9-dihydro-sindaceno[1, 2-b:5, 6-b′] dithiophene-2, 7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5, 2-diyl))bis-(methanylylidene))bis(5, 6-di?uoro-3-oxo-2, 3-dihydro-1H-indene-2, 1-diylidene))dimalononitrile (IEICO-4F) host system. The fabricated OPD exhibited a high detectivity (D*) of 1.35 × 1012 Jones at 805 nm by adding 10 wt% PC71BM, which is 1.5 folds higher than it from the control system. The improved performance was mainly attributed to the increased light absorption in the short wavelength range and cascade energy level alignment, which is responsible for the e?cient light harvesting and exciton utilization. Furthermore, the active layer morphology was optimized by adjusting the ratio of PC71BM acceptor, which e?ciently enhances charge transport and mobility of the device as well as suppress bimolecular recombination. This work indicates that adding fullerene into non-fullerene system plays a positive e?ect on the device performance of panchromatic OPDs.

    关键词： Film morphology,Charge mobility,Non-fullerene and fullerene acceptors,Panchromatic organic photodetector,Charge transfer

    更新于2025-09-11 14:15:04

  • Promising hole‐transporting materials for perovskite solar cells: Modulation of the electron‐deficient units in triphenylamine derivative‐based molecules

    摘要： Modulation of the electron-deficient π-bridge units in 4-methoxy-N-(4-methoxyphenyl)-N-phenylbenzenamine (MeTPA)-based hole-transporting materials (HTMs) is a significant approach to improve hole mobility of HTMs for perovskite solar cells (PSCs). In this study, a class of simple MeTPA-based HTMs (H1-H4) with different π-bridged electron-deficient units were designed for the purpose of providing a theoretical model to obtain potential MeTPA-based HTMs. The results indicated that H2 to H4 exhibit better performance, such as larger Stokes shifts, smaller exciton-binding energy, better stability, good solubility, and higher hole mobility, in comparison with the parental material H1. H2 and to H4 materials with high hole mobility (5.45 × 10?4, 2.70 × 10?1, 3.99 × 10?3 cm2 V?1 second?1, respectively) may embody promising HTMs to yield good performance in PSCs. Therefore, the useful information obtained regarding control of the electron-deficient π-bridge units of MeTPA-based HTMs is an effective way to obtain excellent HTMs for PSC applications.

    关键词： perovskite solar cells,condensed rings,charge transfer,hole mobility,hole-transporting materials

    更新于2025-09-11 14:15:04

  • Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency <i>f</i><sub>T</sub> of 310 GHz

    摘要： A deeply-scaled GaN-on-Si high electron mobility transistor (HEMT) with a record-high cut-off frequency (fT) of 310 GHz has been demonstrated. The device has an InAlN/GaN heterojunction structure, a source-drain spacing of 400 nm, and a gate length of 40 nm. The device exhibited a high drain current of 2.34 A/mm, a peak transconductance of 523 mS/mm, and a gate-to-drain breakdown voltage (BVgd) of 15 V. A Johnson’s figure-of-merit (FOM = fT × BV) of 4.65 THz·V has been achieved, which is comparable to those reported in GaN-on-SiC. These results indicate GaN-on-Si transistors are promising in low-cost emerging mm-wave applications.

    关键词： mm-wave applications,GaN-on-Si,HEMT,high electron mobility transistor,cut-off frequency

    更新于2025-09-11 14:15:04

  • Post-functionalization of polyvinylcarbazoles: An open route towards hole transporting materials for perovskite solar cells

    摘要： We report on the potential of tuning poly(9-vinylcarbazole) (PVK) properties through functionalization for an application as hole transport material (HTM) for perovskite solar cells (PSCs). The synthesized PVK-based polymers were substituted with moieties of interest to improve the solubility, the charge transport properties, or to tune energy levels. Bis(4-methoxyphenyl)amine moieties were found to improve the hole mobility and to increase the HOMO level of the PVK. Therefore, PSCs employing PVK-[N(PhOCH3)2]2 as HTM exhibited a best PCE of 16.7%. Compared to spiro-OMeTAD, first studies have shown that PVK-[N(PhOCH3)2]2 could extend PSC lifetime.

    关键词： Hole mobility,Hole-transporting materials,Device stability,Perovskite solar cells,Polyvinylcarbazoles

    更新于2025-09-11 14:15:04

  • [IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Identification and Characterization of ‘Killer-Modes’ in Organic Semiconductors with Terahertz Spectroscopy

    摘要： Organic semiconductors are promising modern optoelectric materials, with countless potential applications ranging from ?exible displays to photovoltaics. The applicability of these materials is largely driven by their charge carrier mobility, which is strongly in?uenced by low-frequency vibrations. In this work, the speci?c low-frequency vibrations that exhibit strong electron-phonon coupling, deemed ‘killer-modes’, in organic semiconductors are determined using a combination of terahertz time-domain spectroscopy and solid-state density functional theory. The results of this study enable a concerted synthetic effort to rationally design novel materials, utilizing intermolecular forces to stiffen lattice dynamics, to ultimately improve charge carrier mobility.

    关键词： electron-phonon coupling,organic semiconductors,charge carrier mobility,solid-state density functional theory,terahertz spectroscopy

    更新于2025-09-11 14:15:04

  • Solution-Processable All-Small-Molecule for High-Performance Nonfullerene Organic Solar Cells with High Crystallinity Acceptor

    摘要： In this work, two small molecule acceptors (IDIC and IDIC-4F) with different crystallinity and energy level have been successfully applied in nonfullerene-based all-small molecule organic solar cells (NFASM-OSCs). The donor of DFDT(DPP)2 was chosen because of complementary absorption with IDIC and IDIC-4F. As acceptor, IDIC-4F exhibited a higher PCE than IDIC due to better crystallinity. This work not only shows us how to balance the relationship between Voc and Jsc, but also suggests us how to get a good phase separation morphology. Moreover, Increased crystallinity helps to inhibit bimolecular recombination and increase charge mobility. By optimizing device preparation conditions, the best PCE of 9.43% for DFDT(DPP)2 : IDIC-4F as active layer was achieved with excitable Jsc (16.83 mA cm-2) and FF (0.65). The FF and Jsc of resultant device show a significant increased which is among the top efficiencies based on DPP as terminal acceptor groups of NFSM-OSCs reported in document up to now.

    关键词： crystallinity,small molecule acceptors,phase separation morphology,nonfullerene organic solar cells,charge mobility

    更新于2025-09-11 14:15:04

  • Designing High Performance Nonfullerene Electron Acceptors with Rylene Imides for Efficient Organic Photovoltaics

    摘要： Improving carrier mobility, redox stability, blend morphology, and photovoltaic performance while elucidating structure-property relationships remain important design goals for nonfullerene electron acceptors (NFAs) for organic solar cells. Although numerous NFAs have been created from rylene diimide electron-deficient building blocks, they have showed far inferior photovoltaic properties compared to benchmark fused-ring electron acceptors (FREAs) such as ITIC. Herein we show that new bis(naphthalene-imide)arylenelidenes (BNIAs), incorporating rylene-imide end-capping groups via methine bridges in donor-acceptor architectures, are endowed with enhanced electrochemical redox stability, high carrier mobilities, and high photovoltaic performance. Pairing of those BNIAs that are also FREAs, NIDT and NIBT, respectively with donor polymer PBDB-T produced 10.0-10.8% efficient photovoltaic devices, which are comparable to benchmark ITIC devices. Blends of FREAs NIDT and NIBT and those of non-FREA NITV were found to have similar electron mobility, demonstrating that the much higher photovoltaic efficiency of NIDT and NIBT devices does not originate from enhanced charge transport but from differences in blend morphology and blend photophysics. The results demonstrate that incorporating rylene imides into molecular architectures through methine-bridged donor-acceptor coupling motif is a promising design strategy towards more efficient and electrochemically rugged materials for organic solar cells.

    关键词： organic photovoltaics,carrier mobility,redox stability,photovoltaic performance,nonfullerene electron acceptors,rylene imides

    更新于2025-09-11 14:15:04

  • [IEEE OCEANS 2019 - Marseille - Marseille, France (2019.6.17-2019.6.20)] OCEANS 2019 - Marseille - Experiments of Recreating the Frequency Domain Properties of Seawater Channel for Underwater Optical Communication

    摘要： Mobile Edge Computing (MEC) has recently emerged as a promising technology to push the cloud frontier to the network edge, provisioning network services in close proximity of mobile users. Serving users at edge clouds has many advantages, such as reducing service delay, lower operational cost, and improved network resource availability. Furthermore, providing virtualized network service in MEC can improve user service experience, simplify network service deployments, and ease network resource management. However, provisioning reliable and seamless virtualized network services for mobile users while meeting their individual stringent delay requirements is of signi?cant importance and challenging. In this paper, we study mobile users requesting for virtualized network function services in MEC. We ?rst formulate two novel user request admission problems that take into account user mobility and service delay requirements. One is to minimize the admission cost of all user requests, assuming that there are suf?cient resources in MEC to meet user resource demands; the other is to maximize the accumulative network utility, subject to resource capacities of cloudlets, where the utility gain by admitting a request is determined by its resource demand and delay requirement, and the requested resource utilization in MEC. We then devise ef?cient approximation algorithms for the two problems. We ?nally evaluate the performance of the proposed algorithms through experimental simulations. Experimental results demonstrate that the proposed algorithms are promising.

    关键词： Network Function Virtualization,MEC,delay-sensitive,NFV,user mobility,Mobile Edge Computing,VNF service replication

    更新于2025-09-11 14:15:04

  • [IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Orientation controlled GaSb nanowires: from growth to application

    摘要： In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of applications. Using various GaSb NWs CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility (cid:1766)111(cid:1767)-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in solid catalysts, our Pd-catalyzed VSS-NWs. As stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface interface for efficient orientation at epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in (cid:1766)111(cid:1767) orientation for a wide diameter range of between 10 and 70 nm. Back-gated the field-effect Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ～330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ～30 nm with a free carrier concentration of ～1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

    关键词： vapor-solid-solid growth,GaSb nanowires,high-mobility,CMOS-compatible,orientation-controlled

    更新于2025-09-11 14:15:04

  • Lateral InSe p–n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells

    摘要： Two-dimensional InSe possesses good electrical conductivity, intrinsic and structural flexibility, high chemical stability, and a tunable band gap, enabling it to be a promising candidate for flexible and wearable solar cells. Here we construct a lateral p?n junction by partially doping molybdenum trioxide (MoO3) at the surface of the InSe monolayer. Our density functional theory calculations reveal that the strong hybridization between MoO3 and InSe induces a lateral built-in electric field in the partially doped substrate and promotes the effective separation of carriers. Under a large range of external stains, the doped InSe can maintain the direct band gap, and the lateral structure device exhibits power conversion efficiencies over 5% and high carrier mobility around 1000 cm2 V?1 s?1. In particular, a power conversion efficiency of 20.7% can be achieved with 10% compressive strain. The partially doped InSe monolayer is expected to be used as an ultrathin flexible solar cell.

    关键词： lateral p?n junction,density functional theory,carrier mobility,flexible solar cells,power conversion efficiency,Two-dimensional InSe,molybdenum trioxide

    更新于2025-09-11 14:15:04