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Probing the light hole / heavy hole switching with correlated magneto-optical spectroscopy and chemical analysis on a single quantum dot
摘要： A whole series of complementary studies have been performed on the same, single nanowire containing a quantum dot: cathodoluminescence spectroscopy and imaging, micro-photoluminescence spectroscopy under magnetic field and as a function of temperature, and energy-dispersive X-ray spectrometry and imaging. The ZnTe nanowire was deposited on a Si3N4 membrane with Ti/Al patterns. The complete set of data shows that the CdTe quantum dot features the heavy-hole state as a ground state, although the compressive mismatch strain promotes a light-hole ground state as soon as the aspect ratio is larger than unity (elongated dot). A numerical calculation of the whole structure shows that the transition from the heavy-hole to the light-hole configuration is pushed toward values of the aspect ratio much larger than unity by the presence of a (Zn,Mg)Te shell, and that the effect is further enhanced by a small valence band offset between the semiconductors in the dot and around it.
关键词： molecular beam epitaxy,optical spectroscopy,EDX,semiconductors,cathodoluminescence,quantum dot,nanowires
更新于2025-11-21 11:20:48
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Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
摘要： GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with extended cutoff wavelength. However, traditional GeSn/Ge heterostructure usually consists defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of photodetector fabricated on bulk GeSn/Ge heterostructure induces considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects and the feature dimension is naturally at nanoscale. Photodetector with low dark current can be built on GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and the enhanced responsivity compared to Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.
关键词： Nanowire,Germanium-tin,Molecular beam epitaxy (MBE),Side-gated,Photodetector,Ferroelectrical polymer
更新于2025-11-21 11:01:37
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Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ～280?nm emission grown by plasma-assisted molecular beam epitaxy
摘要： We have investigated the nature of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells grown by plasma-assisted molecular beam epitaxy for application in deep-ultraviolet light emitters. Excitation and temperature-dependent and time-resolved photoluminescence measurements and transmission and reflectance spectroscopy have been complemented by high-angle annular dark field scanning transmission electron microscopy. The 3nm quantum wells are characterized by interface roughness having a height of 0.3-1nm and the maximum value is in excellent agreement with values obtained from calculations done to analyze the measured photoluminescence lineshape. The radiative lifetime increases with temperature, suggesting the role of electron-hole scattering to cool photoexcited carriers to the ground state of the quantum wells.
关键词： A1. Interfaces,B1. Nitrides,A3. Quantum wells,A3. Molecular beam epitaxy
更新于2025-09-23 15:23:52
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Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
摘要： In the present work, we report on the in-plane electrical transport properties of midwave (MWIR) and longwave infrared (LWIR) InAs/GaSb type-II superlattices (T2SLs) grown by molecular beam epitaxy (MBE) system on GaAs (001) substrate. The huge lattice mismatch between the T2SL and GaAs substrate is reduced by the growth of GaSb buffer layer based on interfacial misfit array (IMF) technique. In order to compensate the strain in the InAs/GaSb T2SL, we utilized a special shutters sequence to get InSb-like and GaAs-like interfaces. It is found that the MWIR InAs/GaSb T2SL exhibits a p- and n-type conduction at low and high temperatures, respectively. Interestingly, the conduction change temperature is observed to be dependent on the growth temperature. On the other hand, LWIR T2SL conduction is dominated only by electrons. It is important to note that the dominant scattering mechanism in LWIR T2SL at low temperatures is the interface roughness scattering mechanism.
关键词： Hall effect,High-resolution X-ray diffraction,Type-II superlattices,Molecular beam epitaxy
更新于2025-09-23 15:22:29
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Electric-Field Control of Dirac Two-Dimensional Electron Gas in PbTe/CdTe Heterostructures
摘要： Two-dimensional electron gases (2DEGs) confined to quantum wells trigger rich emergent phenomena and serve as a host for high-speed electronics. 2DEG in PbTe/CdTe heterostructure was predicted to be Dirac electrons and confirmed by recent experiments. Here, we demonstrate the manipulation of electrical transport properties of this 2DEG with extremely high mobility and unique electron structure by ionic liquid-gating. The extreme capacitance of carrier modulation enables to tune the band structure. With a change of the gate voltage, the Fermi level moves to the conduction band and crosses the Dirac Point, leading to the shift of quantum oscillation. Our results may offer new insight toward electronic application with on-demand properties.
关键词： Fermi surface,molecular beam epitaxy,ionic liquid gating,quantum oscillation,two-dimensional electron gas
更新于2025-09-23 15:22:29
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Optical Band Gap, Local Work Function and Field Emission Properties of MBE Grown β-MoO3 Nanoribbons
摘要： Monoclinic molybdenum trioxide (β-MoO3) nanostructures (shaped like nanoribbons: NRs) were grown on Si(100), Si(5512) and fluorine-doped tin oxide (FTO) by molecular beam epitaxy (MBE) technique under ultra-high vacuum (UHV) conditions. The dependence of substrate conditions and the effective thickness of MoO3 films on the morphology of nanostructures and their structural aspects were reported. The electron microscopy measurements show that the length and the aspect ratio of nanostructures increased by, 260% without any significant change in the width for a change in effective thickness from 5 nm to 30 nm. NRs are grown along <011> for all the effective thickness of MoO3 films. Similarly, when we increased the film thickness from 5 nm to 30 nm, the optical band gap decreased from 3.38± 0.01eV to 3.17± 0.01eV and the local work function increased from 5.397 ± 0.025 eV to 5.757 ± 0.030 eV. Field emission turn-on field decreased from 3.58 V/μm for 10-μA/cm2 to 2.5 V/μm and field enhancement factor increased from 1.1×104 to 5.9×104 for effective thickness variation of 5 nm to 30 nm β-MoO3 structures. The β-MoO3 nanostructures found to be much better than the α-MoO3 nanostructures due to low work function, low turn on field and high field enhancement factor, and are expected to be useful applications.
关键词： β-MoO3 nanostructures,Field emission and Kelvin probe force microscopy (KPFM),Optical band gap,Molecular beam epitaxy (MBE),Electron microscopy
更新于2025-09-23 15:22:29
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Effects of Mg incorporation in cubic GaN films grown by PAMBE near Ga rich conditions
摘要： The structural and electrical properties of Mg-doped cubic GaN epi-layers grown by plasma-assisted molecular beam epitaxy (PAMBE) near Ga rich conditions are investigated. The diffraction of high-energy reflected electrons (RHEED) in situ, in addition to structural studies of X-ray diffraction, show that the fraction of hexagonal and crystal twinning inclusions decreases when the Mg flux increases. The condition for the higher incorporation of Mg where the electrical properties are optimized is highly sensitive to the flow ratio Mg/Ga. The p-doping level steadily increases with increasing Mg flux. The Mg concentration obtained by secondary ion mass spectroscopy (SIMS) from samples grown at Mg temperatures from 200 °C to 700 °C are in a range between 2 × 10^19 to 2 × 10^20 atoms/cm^3. The highest mobility and p-type doping level achieved, determined from Hall measurements, were 28.2 cm^2/V-s and 2 × 10^19 cm^-3, respectively. We corroborate that the Mg doped c-GaN films are suitable for the construction of optoelectronic devices based on cubic III-Nitrides.
关键词： Plasma-assisted molecular beam epitaxy,Cubic GaN diode,Mg p-type doping
更新于2025-09-23 15:22:29
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Microscopy and Spectroscopy Study of Nanostructural Phase Transformation from β-MoO3 to Mo under UHV – MBE Conditions
摘要： We report a simple reduction of molybdenum oxide (β-MoO3) grown on reconstructed Si(100) by thermal annealing in ultra-high vacuum (UHV) using molecular beam epitaxy (MBE). By increasing the substrate temperature during deposition or the annealing temperature after growth, the morphologies of as-deposited structures were found to vary from nanoribbons (NRs) of β-MoO3 to nanoparticles (NPs) of Mo. The change in morphologies have been associated with a structural transition from β-MoO3 to MoO2 at 400 °C and MoO2 to Mo at 750 °C. The in-situ X-ray photoelectron spectroscopy (XPS) measurements revealed a shift of the Mo 3d peaks towards lower binding energies, representing the reduction in Mo oxidation states until a pure Mo 3d peak at 750°C was observed. The ex-situ KPFM measurements showed a decrease in the local work function (Φ) (from ≈ 5.27 ± 0.05 eV to ≈ 4.83 ± 0.05 eV) with increasing substrate temperature. A gradual reduction of the band gap from ≈ 3.32 eV for β-MoO3 NRs to zero band gap for Mo NPs is also observed during the annealing up to 750 °C.
关键词： in-situ XPS,KPFM,molecular beam epitaxy (MBE),Mo nanoparticles,β-MoO3 nanoribbons,phase transition
更新于2025-09-23 15:22:29
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Recent Advancement of Semiconductor Materials and Devices
摘要： 本論文では, 主に GaAs および GaAs 系混晶半導体の MBE 成長とそのデバイス応用について取り上げたが, その他にも窒化物半導体, 酸化物半導体, II-VI 族半導体といった多くの半導体の成長や, 量子細線, 量子ドットのような量子井戸以上に複雑な構造の製作にも MBE 法は活用されている. 基礎研究から実用化まで, 半導体デバイスの開発において MBE 法が成し遂げてきた功績は極めて大きい. 今後も素子構造の製作, 新規半導体材料の成長, 結晶欠陥の制御など様々な要求のある結晶成長時に MBE 法は活用され続けるであろう.
关键词： Compound semiconductors,Optical and electronic devices,Molecular beam epitaxy
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2018.6.18-2018.6.22)] 2018 IEEE Symposium on VLSI Technology - Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10 <sup>?10</sup> Ω-cm <sup>2</sup>
摘要： Ga and Sn surface-segregated p+-GeSn (Seg. p+-GeSn) was grown by molecular beam epitaxy (MBE) to achieve an average active Ga doping concentration of 3.4×1020 cm-3 and surface Sn composition of more than 8%. This enables the realization of record-low specific contact resistivity ρc down to 4.4×10-10 ?-cm2. The average ρc extracted from 14 sets of Ti/Seg. p+-GeSn Nano-TLM test structures, a collection of more than 90 devices is 6.5×10-10 ?-cm2. This is also the lowest ρc for non-laser-annealed contacts. Ti contacts to p+-GeSn films with and without Ga and Sn surface segregation were fabricated. It is shown that the segregation of Ga and Sn at the Ti/p+-GeSn interface leads to 50% reduction in ρc as compared with a sample without segregation.
关键词： Ga and Sn surface-segregated p+-GeSn,molecular beam epitaxy,specific contact resistivity,Nano-TLM test structures
更新于2025-09-23 15:21:21