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Understanding Spatiotemporal Photocarrier Dynamics in Monolayer and Bulk MoTe <sub/>2</sub> for Optimized Optoelectronic Devices
摘要： Semiconducting molybdenum ditelluride has emerged as a promising transition-metal dichalcogenide with a number of novel properties. In particular, its bandgap in infrared range makes it an attractive candidate for ultrathin and high-performance infrared optoelectronic applications. Dynamical properties of photocarriers play a key role in determining performance of such devices. We report an experimental study on spatiotemporal dynamics of photocarriers in both monolayer and bulk MoTe2. Transient absorption measurement in reflection geometry revealed ultrafast thermalization and relaxation processes of photocarriers and lifetimes of about 60 and 80 ps in monolayer and bulk MoTe2, respectively. By spatially resolved transient absorption measurements on monolayer, we obtained an exciton diffusion coefficient of 20 ± 10 cm2 s?1, a mean free time of 200 fs, a mean free path of 20 nm, and a diffusion length of 350 nm. The corresponding values for the bulk sample are 40 ± 10 cm2 s?1, 400 fs, 40 nm, and 570 nm, respectively. These results provide fundamental information for understanding and optimizing performance of MoTe2-based optoelectronic devices.
关键词： two-dimensional material,exciton,transient absorption,molybdenum ditelluride,transition-metal dichalcogenide,diffusion,photocarrier dynamics
更新于2025-09-23 15:23:52
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P-type laser-doped WSe <sub/>2</sub> /MoTe <sub/>2</sub> van der Waals heterostructure photodetector
摘要： Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials are being studied extensively for their prospective applications in photodetectors. As the pristine WSe2/MoTe2 heterostructure is a type I (straddling gap) structure, it cannot be used as a photovoltaic device theoretically, although both WSe2 and MoTe2 have excellent photoelectric properties. The Fermi level of p-doped WSe2 is close to its valence band. The p-doped WSe2/MoTe2 heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe2 and p-doped WSe2. Here, a 633 nm laser was used for scanning the surface of WSe2 in order to obtain the p-doped WSe2. X-ray photoelectron spectroscopy (XPS) and electrical measurements verified that p-type doping in WSe2 is produced through laser treatment. The p-type doping in WSe2 includes substoichiometric WOx and nonstoichiometric WSex. A photovoltaic device using p-doped WSe2 and MoTe2 was successfully fabricated. The band structure, light-matter reactions, and carrier-transport in the p-doped WSe2/MoTe2 heterojunction were analyzed. The results showed that this photodetector has an on/off ratio of ≈104, dark current of ≈1 pA, and response time of 72 μs under the illumination of 633 nm laser at zero bias (Vds = 0 V). The proposed p-doping method may provide a new approach to improve the performance of nanoscale optoelectronic devices.
关键词： molybdenum ditelluride,heterojunction,tungsten selenide,photodetector,p-doped
更新于2025-09-23 15:21:01
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Coulomb scattering mechanism transition in 2D layered MoTe <sub/>2</sub> : effect of high- <i>κ</i> passivation and Schottky barrier height
摘要： Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-to-semiconductor Schottky barrier (SB), and ionic charges in the gate oxides, which often limits the understanding of the charge scattering mechanism in 2D electronic systems. Here, we present the effects of hafnium dioxide (HfO2) high-κ passivation and SB height on the low-frequency (LF) noise characteristics of multilayer molybdenum ditelluride (MoTe2) transistors. The passivated HfO2 passivation layer significantly suppresses the surface reaction and enhances dielectric screening effect, resulting in an excess electron n-doping, zero hysteresis, and substantial improvement in carrier mobility. After the high-κ HfO2 passivation, the obtained LF noise data appropriately demonstrates the transition of the Coulomb scattering mechanism from the SB contact to the channel, revealing the significant SB noise contribution to the 1/f noise. The substantial excess LF noise in the subthreshold regime is mainly attributed to the excess metal-to-MoTe2 SB noise and is fully eliminated at the high drain bias regime. This study provides a clear insight into the origin of electronic signal perturbation in 2D electronic systems.
关键词： Coulomb screening,low-frequency noise,Schottky barrier height,molybdenum ditelluride,high-κ passivation
更新于2025-09-10 09:29:36