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Noise characteristics of Ni/GaN Schottky barrier IMPATT diode based on polar- and nonpolar-oriented wurtzite GaN for terahertz application
摘要： This paper reports a study investigating the noise performance of Ni/GaN Schottky barrier impact-ionization-avalanche-transit-time (IMPATT) diodes based on the polar- and nonpolar-oriented wurtzite GaN by a numerical simulation. Results show that the nonpolar IMPATT diode exhibits a significant wider and higher frequency-band corresponding to the low noise measure (NM). The upper limit of the low-noise frequency-band of the IMPATT diode shifts from 159.2 GHz to 184.3 GHz, from 183.4 GHz to 245.7 GHz and from 212.2 GHz to 285.6 GHz when J0 ? 1 kA/cm2, 10 kA/cm2 and 100 kA/cm2, respectively, comparing the polar with the nonpolar IMPATT diodes. Our analysis proves that the mechanism comes from excellent properties of the Negative Differential Mobility (NDM) characteristic in the nonpolar orientation wurtzite GaN. In particular, the nonpolar diode still demonstrates better unity between the noise and RF power performances and can significantly improve the stability of IMPATT diodes at terahertz frequency.
关键词： Negative differential mobility,Ni/GaN,Polarization,Noise measure,Negative resistance
更新于2025-09-23 15:19:57
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Prospects of Impact Avalanche Transit-Time Diode Based on Chemical-Vapor-Deposited Diamond Substrate
摘要： We propose a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) for use in microwave applications. CVD diamond is taken as the base substrate material. Simulations were carried out to perform direct-current (DC), small-signal, and noise analyses on the IMPATT. The results are in agreement with experimental reports. The IMPATT based on CVD diamond offers better performance compared with other materials reported to date at 26 GHz to 40 GHz. In the near future, this device could represent the best alternative for designers and semiconductor industry, due to its numerous advantages including higher DC-to-radiofrequency (RF) conversion efficiency (27.81%), highest power density (6.206 9 109 W m?2), minimum noise measure value (?98.22 dBm), and best optimized conductance–susceptance profile with lower quality factor (0.0215).
关键词： conversion efficiency,power density,impact ionization,DDR IMPATT,CVD diamond,noise measure
更新于2025-09-04 15:30:14