- 标题
- 摘要
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- 实验方案
- 产品
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Estimation of Optical Modulator Efficiency from Electrical Characteristics
摘要： We propose a new testing method to estimate the efficiency of Mach-Zehnder modulators by using only electrical characteristics, which is suitable for wafer-level testing. The breakdown voltage of the phase modulator shows a clear relationship with modulator efficiency.
关键词： Silicon photonics,Wafer-level test,Optical modulator
更新于2025-09-23 15:22:29
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Frequency shift of an optical frequency standard as a function of probe modulation of the radiation frequency, pressure, and gas temperature in an absorbing cell
摘要： Frequency shifts of an optical Nd : YAG/I2-standard are measured in a pressure range of molecular iodine 5 – 22 mTorr and deviation of probe modulation frequency 480 kHz – 4 MHz for the hyperfine structure component a1 of the molecular iodine absorption line R(56) 32 – 0. The frequency shift of the optical standard is estimated under varied temperatures of a cell and cell finger, which determines the pressure of the molecular iodine vapour. The requirements are defined to temperature stability of the cell and its finger for obtaining high long-term frequency stability of the optical frequency standard.
关键词： molecular iodine,optical frequency standards,saturation absorption spectroscopy,acousto-optical modulator,lasers,luminescence
更新于2025-09-23 15:21:21
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Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III–V-on-insulator wafer
摘要： We numerically investigated the modulation characteristics of a carrier-depletion InGaAsP optical modulator with a lateral PN junction fabricated on a III–V-on-insulator (III–V-OI) wafer. Owing to the large electron-induced refractive index change in InGaAsP, the InGaAsP optical modulator with a doping concentration of 2 ' 1018 cm%3 in the PN junction exhibited a phase modulation e?ciency VπL of 0.17 Vcm, which was 6 times smaller than that of a Si modulator with the same structure. The doping concentration dependence revealed that αVπL, which is a product of the insertion loss α and VπL, can signi?cantly be improved using InGaAsP when the doping concentration was as high as 1 ' 1018 cm%3. Thus, we concluded that the phase modulation e?ciency and insertion loss can be improved simultaneously using InGaAsP instead of Si for a carrier-depletion optical modulator with a lateral PN junction.
关键词： InGaAsP,carrier-depletion,optical modulator,numerical analysis,III–V-on-insulator
更新于2025-09-23 15:21:21
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Broadband polarization-insensitive amplitude and phase modulators based on graphene-covered buried and ridge silicon waveguides
摘要： In this paper, four easy-to-fabricate graphene-based Si waveguide modulators are presented to overcome the strong polarization dependency of graphene-based modulators. The modulation features of two newly proposed structures, i.e. two graphene-based buried silicon waveguides in addition to two standard ridge silicon waveguides at the telecommunication wavelength of are studied. The results show that for certain widths of each waveguide (the height is constant), the amplitude and phase modulations clearly become polarization-insensitive. The amplitude modulation depths for both the TE and TM modes are equal for these optimized waveguides with the precision of . Moreover, in the proposed modulators, the maximum variations of the real parts of the effective mode indices (EMI) for both the TE and TM modes coincide with each other with an excellent precision ( . This precision value is much smaller than the standard criterion value for confirming a polarization-insensitive phase modulation. For proposed structures, the average modulation depth (MD) and maximum variation of the real parts of EMI are about and respectively. Thus, it means to clearly imply small footprints for both amplitude and phase modulations. Furthermore, the performances of all the structures are studied for all optical telecommunication wavelengths. Even without making any changes to the structures designed at at appropriate wavelength intervals, the structures exhibit polarization-insensitive behaviors.
关键词： Graphene,Polarization-insensitive,Optical modulator,Buried waveguide,Ridge waveguide
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Kuta, Bali, Indonesia (2019.10.23-2019.10.25)] 2019 IEEE Conference on Antenna Measurements & Applications (CAMA) - Receiving Performance of Antenna-Coupled Electrode Electro-Optic Modulators for 5G Frequency Band
摘要： We have already proposed and developed an antenna-coupled- electrode electro-optic (EO) modulator for 28 GHz-band 5th generation mobile communication as a receiving antenna. The designed EO modulator was fabricated a metal ground plane backed linear dipole array using a 50-μm-thick LiNbO3 crystal and a 250-μm-thick SiO2 base. In this paper, we have shown antenna receiving patterns for 1-element dipole antenna, 4-element dipole array antenna and 8-elemen dipole array antenna. Half power beam width for H-plane of our developed receiving antennas are 70, 25 and 11 degree for 1 element, 4-element and 8-element dipole array, respectively.
关键词： 5G mobile communication,radio over fiber,LiNbO3,optical modulator,receiving antenna,ground plane backed dipole array
更新于2025-09-23 15:19:57
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Graphene-based Hybrid Plasmonic Modulator with High Modulation Efficiency
摘要： A graphene-based hybrid plasmonic modulator (GHPM) is proposed by adopting the electro-absorption effect of graphene. The simulation results show the modulation efficiency of GHPM can be as large as 0.417 dB/μm, which is more than twice as much as that of recently presented graphene-on-silicon modulator (GOSM). Then we fabricate a prototype of GHPM. The measurement results demonstrate that the GHPM can work in a broadband from 1530 nm to 1570 nm and an improved modulation efficiency of 1.08 dB (at 30 μm). At last, we have discussed the factors that influence the modulation efficiency. Our work may promote the development of on-chip graphene-based plasmonic devices.
关键词： Plasmonic,Graphene,Optical Modulator
更新于2025-09-16 10:30:52
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Hyperuniform disordered waveguides and devices for near infrared silicon photonics
摘要： We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.
关键词： photonic band gaps,hyperuniform-disordered,silicon photonics,optical modulator,waveguides,resonators
更新于2025-09-16 10:30:52
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Laser Intensity Noise Suppression for Preparing Audio-Frequency Squeezed Vacuum State of Light
摘要： Laser intensity noise suppression has essential effects on preparation and characterization of the audio-frequency squeezed vacuum state of light based on a sub-threshold optical parametric oscillator (OPO). We have implemented two feedback loops by using relevant acousto-optical modulators (AOM) to stabilize the intensity of 795-nm near infrared (NIR) fundamental laser and 397.5-nm ultraviolet (UV) laser generated by cavity-enhanced frequency doubling. Typical peak-to-peak laser intensity fluctuation with a bandwidth of ~10 kHz in a half hour has been improved from ±7.45% to ±0.06% for 795-nm NIR laser beam, and from ±9.04% to ±0.05% for 397.5-nm UV laser beam, respectively. The squeezing level of the squeezed vacuum state at 795 nm prepared by the sub-threshold OPO with a PPKTP crystal has been improved from ?3.3 to ?4.0 dB around 3~9 kHz of analysis frequency range.
关键词： audio frequency,acousto-optical modulator (AOM),laser intensity noise,feedback loop,squeezed vacuum state of light
更新于2025-09-16 10:30:52
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High-Speed All-Optical Modulator Based on a Polymer Nanofiber Bragg Grating Printed by Femtosecond Laser
摘要： On-chip optical modulator for high-speed information processing system has been widely investigated by majority of researchers but the connection with the fiber system is a difficulty. The fiber-based optical modulator is a good solution to this problem. Fiber Bragg Grating has good potential to be used as an optical modulator because of its linear temperature response, narrow bandwidth, and compact structure. In this paper, a new fiber-integrated all-optical modulator has been realized based on a polymer nanofiber Bragg grating printed by femtosecond laser. This device exhibits a fast temporal response of 176 ns and a good linear modulation of -45.43 pm/mW. Moreover, its stability has also been studied. This work firstly employs Bragg resonance to realize a fiber-integrated all-optical modulator and paves the way toward realization of multifunctional lab-in-fiber devices.
关键词： polymer fiber,all-optical modulator,fiber Bragg grating,femtosecond laser micromachining,multi-photon polymerization
更新于2025-09-12 10:27:22
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All-optical modulator based on reduced graphene oxide coated D-shaped fiber waveguide
摘要： An all-optical modulator of reduced graphene oxide coated D-shaped fiber structure, utilizing a convenient and controllable evanescent-field-induced deposition method, was designed in this study. By using the pump pulse at 980 nm, the signal light at 1550 nm was modulated with the rate of 50 kHz, and the maximum modulation depth of 8 dB was obtained using this device. Furthermore, this kind of modulator features strong mechanical stability, ease of fabrication, low cost and compatibility with optical fiber systems, which implies great potential in photonics applications such as all-optical switching and all-optical communication.
关键词： D-shaped fiber,photonics applications,all-optical modulator,evanescent-field-induced deposition,reduced graphene oxide
更新于2025-09-12 10:27:22