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- 2019
- microwave photonics
- optoelectronic oscillator
- frequency division
- Optoelectronic Information Science and Engineering
- Jinan University
- Charles Darwin University
- University of Ottawa
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One-step growth of reduced graphene oxide on arbitrary substrates
摘要： Reduced graphene oxide (rGO) has inherited the outstanding electronic, optical, thermal and mechanical properties of graphene to a large extent, while maintaining sufficient chemically active sites. Therefore, it has attracted a great deal of research attention in the fields of energy storage, electronics, photonics, catalysis, environmental engineering, etc. Currently, the most popular way to prepare rGO is to reduce graphene oxide, which is obtained by modified Hummer methods using tedious treatments in a harsh environment, to rGO flakes. Industrial applications demand advanced preparation methods that can mass produce highly uniform rGO sheets on arbitrary substrates. In this work, a one-step growth process is introduced that utilizes cellulose acetate as a precursor, without any catalysts, to produce uniform ultrathin rGO films on various substrates and free-standing rGO powders. Systematic spectroscopic and microscopic studies on the resulting rGO are performed. Prototypes of electronic and optoelectronic devices, such as field effect transistors (FETs), photodetectors, and humidity sensors, are fabricated and tested, demonstrating the intriguing applications of our rGO materials across a wide range of fields.
关键词： electronic devices,reduced graphene oxide,one-step growth,cellulose acetate,optoelectronic devices
更新于2025-11-21 11:03:25
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Highly flexible self-powered photodetectors based on core–shell Sb/CdS nanowires
摘要： Flexible photodetectors have great applications in flexible image sensors, wearable electronics and smart robots. In this work, we reported the fabrication of highly flexible self-powered photodetectors with core-shell Sb/CdS nanowires as the sensing materials. The fabricated device exhibited high Ion/Ioff ratio of 3.54×103 under zero bias, fast speed of photoresponse and great stability. An open-circuit voltage of 0.35 V was generated due to the presence of CdS and CdSb interfaces within the core-shell nanowires. Besides, the photocurrent of the flexible device is nearly invariable at various bending angles and even after thousands of bending cycles, demonstrating the excellent flexibility and bending stability. The results indicated that the self-powered photodetectors are promising candidates for future passive optoelectronic devices.
关键词： core-shell Sb/CdS nanowires,optoelectronic devices,self-powered,flexible photodetectors
更新于2025-11-21 11:03:13
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Ultra-small colloidal heavy-metal-free nanoplatelets for efficient hydrogen generation
摘要： Metal chalcogenide semiconducting nanoplatelets exhibit a broad absorption spectrum, as well as thickness-dependent optical and electronic properties. As such, they may be used as building blocks in a variety of optoelectronic devices. The direct synthesis of heavy-metal-free ultra-small sized nanoplatelets is still challenging, due to the inherent limits in existing synthetic approaches. Here, we report an efficient template-assisted cation-exchange route to synthesize heavy metal free metal chalcogenide nanoplatelets that are optically active in the near infrared. The SnSe nanoplatelets, whose lateral dimension is 6-10 nm, exhibit a quantum yield of 20%. The nanoplatelets are applied as light absorbers in a photoelectrochemical (PEC) system for hydrogen generation, leading to a saturated photocurrent density of 7.4 mA/cm2, which is a record for PEC devices using heavy metal-free colloidal quantum dots or nanoplatelets under identical measurement conditions. Our results indicate that quasi-zero-dimensional SnSe nanoplatelets hold great potential as efficient light absorbers for emerging optoelectronic technologies.
关键词： nanoplatelets,cation exchange,optoelectronic technologies,SnSe,hydrogen generation
更新于2025-11-19 16:51:07
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{Zn <sub/>6</sub> } Cluster Based Metal–Organic Framework with Enhanced Room-Temperature Phosphorescence and Optoelectronic Performances
摘要： Molecule-based solid-state materials with long lifetimes could enable longer migration distances for excitons, which are beneficial for vast applications in optoelectronic field. Herein, we report a hexanuclear zinc cluster based MOF exhibits highly enhanced phosphorescence about 2 orders of magnitude in comparison with the pristine phosphor ligand. The combination of both experimental and computational results suggest that the {Zn6} cluster is very important for adjusting molecular conformations, packing arrangement, and photophysical properties of the organic phosphor ligands within the MOF matrix. Optoelectronic measurements reveal that the MOF-modified electrode is catalytically active to hydrogen evolution under light irradiation in neutral solution. Thus, our study provide an effective way to achieve low-cost metal-based phosphorescence MOF, expanding its further optoelectronic applications.
关键词： optoelectronic performances,metal?organic framework,hexanuclear zinc cluster,room-temperature phosphorescence
更新于2025-11-14 15:23:50
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Enhancing light absorption by colloidal metal chalcogenide quantum dots <i>via</i> chalcogenol(ate) surface ligands
摘要： Chemical species at the surface (ligands) of colloidal inorganic semiconductor nanocrystals (QDs) markedly impact the optoelectronic properties of the resulting systems. Here, post-synthesis surface chemistry modification of colloidal metal chalcogenide QDs is demonstrated to induce both broadband absorption enhancement and band gap reduction. A comprehensive library of chalcogenol(ate) ligands is exploited to infer the role of surface chemistry on the QD optical absorption: the ligand chalcogenol(ate) binding group mainly determines the narrowing of the optical band gap, which is attributed to the np occupied orbital contribution to the valence band edge, and mediates the absorption enhancement, which is related to the π-conjugation of the ligand pendant moiety, with further contribution from electron donor substituents. These findings point to a description of colloidal QDs that may conceive ligands as part of the overall QD electronic structure, beyond models derived from analogies with core/shell heterostructures, which consider ligands as mere perturbation to the core properties. The enhanced light absorption achieved via surface chemistry modification may be exploited for QD-based applications in which an efficient light-harvesting initiates charge carrier separation or redox processes.
关键词： colloidal metal chalcogenide quantum dots,light absorption,optoelectronic properties,surface ligands,band gap reduction
更新于2025-10-22 19:40:53
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An investigation of 60Co gamma radiation-induced effects on the properties of nanostructured α-MoO3 for the application in optoelectronic and photonic devices
摘要： Gamma ray has sufficient energy to ionize and displace of atoms when interacts with optoelectronic and photonic devices that are placed at γ-radiation exposure environment, can be exposed to gamma radiation, resulting the alteration of the physical properties and hence the performances of devices. A comprehensive investigation of physical properties of the semiconductor materials under the influence of gamma radiation is essential for the effective design of devices for the application in the radiation exposure environment. In this article, a potential candidate for optoelectronic and photonic devices, orthorhombic MoO3 nanoparticles with average crystallite size of 135.31 nm successfully synthesized by hydrothermal method. Then, the properties of nanoparticles exposed to low (10 kGy) and high (120 kGy) absorbed dose of γ-rays from 60Co source were characterized by XRD, FESEM, FTIR and UV–Vis–NIR spectrophotometer and effects of absorbed doses was investigated for the first time. A significant change is observed in different physical properties of α-MoO3 nanoparticles after gamma exposure. The XRD patterns reveal the average crystallite size, intensity and the degree of crystallinity decrease for low dose (10 kGy) and increases for high dose (120 kGy). The calculated average crystallite size exposed to low and high doses are 127.79 nm and 136 nm, respectively. The lattice strain and dislocation density, however, shows the opposite trend of crystallite size with absorbed doses. This result is good evidence for the deterioration of crystallinity for low dose and improvement for high dose. The FESEM results reveal the significant effects of gamma doses on the micrographs of layered structure and on grain size. The optical studies disclose that band gap increases gradually from 2.78 to 2.90 eV, this behavior is associated with the reduction of electronic localized states. These results suggest that α-MoO3 nanoparticles could tolerate high doses of gamma radiation, making it a promising candidate for optoelectronic and photonic devices for γ-ray exposure environment applications.
关键词： Optoelectronic and photonic devices,α-MoO3 nanoparticles,Co-60 gamma radiation,Optical bandgap,Structural properties
更新于2025-10-22 19:40:53
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An optically-gated transistor comprised of amorphous M+Ge2Se3 (M=Cu, Sn) for accessing and continuously programming a memristor
摘要： We demonstrate that a device comprised of sputtered amorphous chalcogenide Ge2Se3/M+Ge2Se3 (M = Sn or Cu) alternating layers, functions as an optically-gated transistor (OGT) and can be used as an access transistor for a memristor memory element. This transistor has only two electrically connected terminals (source and drain), with the gate being optically controlled, thus allowing the transistor to operate only in the presence of light (385 – 1200 nm). The switching speed of the OGTs is less than 15 μs. The OGT is demonstrated in series with a Ge2Se3+W memristor, where we show that by altering the light intensity on the OGT gate, the memristor can be programmed to a continuous range of non-volatile memory states using the saturation current of the OGT as a programming compliance current. By having a continuous range of non-volatile states, one memory cell can potentially achieve 2n levels. This high density, combined with optical programmability, enables hybrid electronic/photonic memory.
关键词： access transistor,chalcogenide,resistive RAM,optoelectronic,selector,amorphous,memristor
更新于2025-09-23 15:23:52
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Oxygen Saturation Measurements from Green and Orange Illuminations of Multi-Wavelength Optoelectronic Patch Sensors
摘要： Photoplethysmography (PPG) based pulse oximetry devices normally use red and infrared illuminations to obtain oxygen saturation (SpO2) readings. In addition, the presence of motion artefacts severely restricts the utility of pulse oximetry physiological measurements. In the current study, a combination of green and orange illuminations from a multi-wavelength optoelectronic patch sensor (mOEPS) was investigated in order to improve robustness to subjects’ movements in the extraction of SpO2 measurement. The experimental protocol with 31 healthy subjects was divided into two sub-protocols, and was designed to determine SpO2 measurement. The datasets for the first sub-protocol were collected from 15 subjects at rest, with the subjects free to move their hands. The datasets for the second sub-protocol with 16 subjects were collected during cycling and walking exercises. The results showed good agreement with SpO2 measurements (r = 0.98) in both sub-protocols. The outcomes promise a robust and cost-effective approach of physiological monitoring with the prospect of providing health monitoring that does not restrict user physical movements.
关键词： green and orange illuminations,optoelectronic patch sensor (mOEPS),oxygen saturation (SpO2),physical movement,pulse oximetry
更新于2025-09-23 15:23:52
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High-performance flexible transparent nanomesh electrodes
摘要： A cost-effective process for producing high-performance Ag-paste-based flexible transparent nanomesh electrodes was developed by optimizing their linewidth, pitch, and height. These nanomesh electrodes, with a linewidth of several hundred nanometers and a pitch of 10–200 μm on a PET substrate, achieved wide ranges of transmittance (83.1–98.8%) and sheet resistance (1.2–30.9 Ω/sq) and a figure of merit (992–1619) superior to those of indium tin oxide (ITO) and silver nanowire (AgNW) electrodes. Our evaluation of their flexibility (testing up to 50,000 cycles) and their electromagnetic interference shielding effectiveness verifies the applicability of these flexible transparent nanomesh electrodes to various flexible optoelectronic devices.
关键词： nanomesh,optoelectronic properties,flexible transparent conducting electrodes,Ag paste,phase-shifting edge lithography
更新于2025-09-23 15:23:52
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Quantum and Dielectric Confinement Effects in Lower-Dimensional Hybrid Perovskite Semiconductors
摘要： Hybrid halide perovskites are now superstar materials leading the field of low-cost thin film photovoltaics technologies. Following the surge for more efficient and stable 3D bulk alloys, multilayered halide perovskites and colloidal perovskite nanostructures appeared in 2016 as viable alternative solutions to this challenge, largely exceeding the original proof of concept made in 2009 and 2014, respectively. This triggered renewed interest in lower-dimensional hybrid halide perovskites and at the same time increasingly more numerous and differentiated applications. The present paper is a review of the past and present literature on both colloidal nanostructures and multilayered compounds, emphasizing that availability of accurate structural information is of dramatic importance to reach a fair understanding of quantum and dielectric confinement effects. Layered halide perovskites occupy a special place in the history of halide perovskites, with a large number of seminal papers in the 1980s and 1990s. In recent years, the rationalization of structure–properties relationship has greatly benefited from new theoretical approaches dedicated to their electronic structures and optoelectronic properties, as well as a growing number of contributions based on modern experimental techniques. This is a necessary step to provide in-depth tools to decipher their extensive chemical engineering possibilities which surpass the ones of their 3D bulk counterparts. Comparisons to classical semiconductor nanostructures and 2D van der Waals heterostructures are also stressed. Since 2015, colloidal nanostructures have undergone a quick development for applications based on light emission. Although intensively studied in the last two years by various spectroscopy techniques, the description of quantum and dielectric confinement effects on their optoelectronic properties is still in its infancy.
关键词： quantum confinement,multilayered perovskites,structural engineering,colloidal nanostructures,hybrid halide perovskites,optoelectronic properties,2D materials,dielectric confinement
更新于2025-09-23 15:23:52