研究目的
Investigating the use of an optically-gated transistor (OGT) composed of amorphous chalcogenide materials as an access device for memristor memory elements to enable continuous programming of non-volatile states and mitigate sneak path currents in resistive memory arrays.
研究成果
The optically-gated transistor (OGT) based on amorphous chalcogenide materials effectively serves as an access device for memristors, enabling continuous programming of non-volatile memory states through light intensity control. It offers advantages such as built-in compliance current limiting, fast switching speeds (<15 μs), and compatibility with existing fabrication processes. The research demonstrates potential for high-density, hybrid electronic/photonic memory applications, with ongoing studies needed on dopant effects, oxygen influence, annealing, and aging.
研究不足
The experimental setup had limitations such as the non-exact placement of the light intensity detector, potential oxygen effects on OGT films over time (though not observed), and the use of long pulse widths in pulse testing due to large capacitance, which may not reflect the full speed capabilities of the devices. Additionally, the OGT's performance dependency on light position between electrodes could be a constraint in non-integrated circuits.
1：Experimental Design and Method Selection:
The study involved fabricating and testing optically-gated transistors (OGTs) made from sputtered amorphous chalcogenide Ge2Se3/M+Ge2Se3 (M=Cu, Sn) layers, integrated with memristors. The rationale was to explore optical control for memristor access and programming, using current-voltage (I-V) measurements and pulse testing to characterize performance.
2：Sample Selection and Data Sources:
OGT devices were fabricated on p-Si wafers with specific resistivity (1-100 Ohm-cm). Memristors were provided by Knowm, Inc. (part BS-AF-W 8). Data were collected from electrical tests and optical measurements.
3：8). Data were collected from electrical tests and optical measurements. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an AJA International ATC Orion 5 UHV Magnetron sputtering system, HP4156A Semiconductor Parameter Analyzer, Renishaw inVia Raman Confocal Microscope, n&k Technologies 1280 Broadband UV-Vis Spectrometer, Cascade Microtech micromanipulators, various LEDs (e.g., C503B-BAN-CY0C0461 from Cree, Inc., MTE1077N1-R from Marktech Optoelectronics), Digilent Analog Discovery 2 (AD2), and Thor Labs PM16-121 photodiode sensor. Materials included Ge2Se3 targets from Processed Materials, W electrodes, and quartz substrates.
4：Experimental Procedures and Operational Workflow:
OGTs were fabricated by sputtering alternating layers of Ge2Se3 and M+Ge2Se3 on p-Si substrates, followed by W electrode deposition. Electrical testing involved I-V sweeps and pulse measurements using the HP4156A and AD2, with LEDs for optical gating. Raman and UV-Vis spectra were collected to analyze material properties. Memristors were tested in series with OGTs on a breadboard setup.
5：Data Analysis Methods:
Data were analyzed using I-V curve interpretation, Tauc plots for optical band gap estimation, and switching speed measurements from oscilloscope traces. Statistical analysis was not explicitly mentioned, but curve fitting and comparison methods were used.
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LED
C503B-BAN-CY0C0461
Cree, Inc.
Used as a light source for I-V sweep measurements, specifically at 470 nm wavelength.
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Thor Labs PM16-121 standard photodiode sensor
PM16-121
Thor Labs
Used to measure light intensity during experiments.
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ATC Orion 5 UHV Magnetron sputtering system
Orion 5
AJA International
Used for sputtering alternating layers of Ge2Se3 and M+Ge2Se3 films during device fabrication.
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HP4156A Semiconductor Parameter Analyzer
4156A
HP
Used for I-V sweep measurements to characterize the electrical properties of OGTs and memristors.
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Renishaw inVia Raman Confocal Microscope
inVia
Renishaw
Used to collect Raman spectra for verifying stoichiometry and amorphous nature of the films.
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n&k Technologies 1280 Broadband UV-Vis Spectrometer
1280
n&k Technologies
Used to measure index of refraction and extinction coefficient for optical band gap estimation.
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Cascade Microtech micromanipulators
Cascade Microtech
Used for precise probing during electrical testing on the microprobe station.
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LED
MTE1077N1-R
Marktech Optoelectronics
Used for switching time measurements at 770 nm wavelength.
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Digilent Analog Discovery 2
AD2
Digilent
Used to supply pulses for switching response tests and as an oscilloscope for data collection.
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Ge2Se3 target
Processed Materials
Used as the sputtering target for depositing Ge2Se3 layers in the OGT fabrication.
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Memristor
BS-AF-W 8
Knowm, Inc.
Used as the memory element in series with the OGT for testing programming and access capabilities.
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