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High-Performance p-BP/n-PdSe2 Near-Infrared Photodiode with Fast and Gate-Tunable Photoresponse
摘要： Van der Waals heterostructures composed of transition metal dichalcogenide (TMDs) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report a novel van der Waals (vdW) TMDs heterojunction photo-diode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2) which establish a high and tunable rectification and photoresponsivity. A high rectification up to ≈ 7.1 × 105 is achieved which is successfully tuned by employing the back gate voltage to the heterostructure devices. Besides, the device significantly shows the high and gate-controlled photoresponsivity of ?? = 9.6 × 105 ?? ?? ―1, 4.53 × 105 ???? ―1 and 1.63 × 105 ???? ―1 under the influence of light of different wavelengths (?? = 532, 1064 and 1310 nm) in visible and near-infrared regions respectively due to interlayer optical transition and low Schottky. The device also demonstrates extraordinary values of detectivity (?? = 5.8 × 1013 Jones) and external quantum efficiency (?????? ≈ 9.4 × 106), which are an order of magnitude higher than the currently reported values. The effective enhancement of photovoltaic characteristics in visible and infrared regions of this TMDs heterostructure based system has a huge potential in the field of optoelectronics to realize high-performance infrared photodetectors.
关键词： rectification,palladium diselenide,detectivity,photoresponsivity,transition metal dichalcogenide materials,near-infrared
更新于2025-09-23 15:21:01
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Few-layer PdSe2-based field-effect transistor for photodetector applications
摘要： We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 ? 1010 Jones under laser illumination (λ ? 655 nm and power of 0.057 mWmm(cid:0) 2). The negative threshold voltage shift in transfer characteristics upon laser illumination is mainly attributed to the photogating effect. Systematic analysis of experimental data indicates that the photogating effect and space charge limited conduction are simultaneously involved in the conduction mechanism. We observe that the photogenerated current increases logarithmically as the light intensity increases, and it persists (~200 s) even after stopping the illumination. The slow decrease in current was attributed to the trapping of photogenerated charge carriers at the PdSe2/SiO2 interface and the defects in the structure of PdSe2. We also observe a reproducible and stable time-resolved photoresponse with respect to the incident laser power. We believe that this study can be an important source of information and can help researchers to continue to investigate methods that would allow them to maximise the potential of PdSe2 for photodetector applications.
关键词： Palladium diselenide,Photodetector,Field effect transistor,Two-dimensional materials,Photoresponse
更新于2025-09-23 15:21:01
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Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
摘要： Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 × 103 A W-1 and 1.72 × 1010 W / Hz1/2 at VSD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.
关键词： palladium diselenide,field effect transistors,two-dimensional layered material,photodetection
更新于2025-09-16 10:30:52
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Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering
摘要： Recently, palladium diselenide (PdSe2), with a unique low-symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.
关键词： photoresponsivity,palladium diselenide,photodetector,band convergence
更新于2025-09-16 10:30:52