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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - Characterization of Phase Change Material Germanium Telluride for RF Switches
摘要： This paper presents the simulation and measured results of a phase-change material (PCM) based radio-frequency (RF) switch optimized to improve the ratio between OFF-state and ON-state resistivity. Various samples having germanium telluride (GeTe) films are developed and imaged using Atomic Force Microscope (AFM) and are compared with cross-wafer resistance measurement results to determine the optimum sputtering conditions of the GeTe films. A simple four-layer fabrication process for GeTe based switches is presented. Several switches with different micro-heater dimensions are compared to investigate the performance of heater and its impact on the isolation performance of switch. A compact RF series switch has been measured, demonstrating an insertion loss of only 0.29 dB and an OFF-state isolation better than 23 dB over DC–26 GHz frequency range, yielding a relatively high Roff/Ron ratio.
关键词： SPST,Latching RF Switches,Phase Change Material (PCM),RF Switch,Germanium Telluride (GeTe)
更新于2025-09-04 15:30:14
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[IEEE 2018 48th European Microwave Conference (EuMC) - Madrid, Spain (2018.9.23-2018.9.27)] 2018 48th European Microwave Conference (EuMC) - Double-Port Double-Throw (DPDT) Switch Matrix Based on Phase Change Material (PCM)
摘要： This paper presents the design, fabrication and high frequency characterization of GeTe phase change material based double port double throw switch (DPDT) matrix using phase change materials. The material exhibits non-volatile conductivity changes between amorphous high resistance and crystalline low resistance state. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of 4-terminal RF switch and the integration of this structure into wideband DPDT matrices. The proposed device has less than 2 dB loss and more than 20 dB below 5 GHz. This matrix can retain its state without any applied bias.
关键词： Phase change material,routing circuits,bi-stable RF switches,GeTe
更新于2025-09-04 15:30:14
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Bi L<sub>III</sub>-Edge XAFS Study of GeBiTe Phase-Change Recording Material Using Actual Media
摘要： The crystallization of GeBiTe (GBT) is faster than that of the well-known phase-change recording material GeSbTe (GST). Therefore, the investigation of GBT structure as well as its crystallization process is attractive. Accordingly, the high-speed crystallization of GBT is due to Bi. Thus, it was necessary to know the local structure around Bi within the amorphous GBT. Note that an interface layer, which is a very thin dielectric film adjacent to recording film, assists the crystallization of phase-change material in the optical recording media. The local structure around Bi in GBT within an actual media was analyzed using XAFS. Bi LIII-edge XAFS spectra of crystalline and amorphous GBT respectively, both with and without interface layer in the media, were obtained. As result of this analysis on GBT, nearest neighbor atom of Bi was found to be Ge. Moreover, within the amorphous GBT, the interatomic distance around Bi is larger than that around Ge. These are the differences between GST and GBT. We speculate that these factors contribute to the improvement of the GBT crystallization speed. On the other hand, the interface layer doesn’t influence the local structure of GBT; however, it does have an electric effect on the recording layer.
关键词： interatomic distance,higher crystallization speed,rewritable optical recording media,Bi LIII-edge,GeSbTe(GST),phase-change material,actual media,EXAFS,interface layer,GeBiTe(GBT)
更新于2025-09-04 15:30:14
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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - The Design of High-Responsivity Millimeter Wave Imager using Vanadium Dioxide Microbolometers
摘要： A new class of millimeter wave (mmW) imaging sensor using a phase-change material (PCM) microbolometer is designed and presented. In this approach, non-linear and large change in electrical resistivity of antenna-coupled vanadium dioxide (VO2) bolometer are exploited to achieve high responsivity, fast response time, and low noise equivalent power (NEP). The sensor is biased near the phase transition cliff temperature of 68 ?C. Micro-electro-mechanical Systems (MEMS) microfabrication process is utilized to suspend the sensor in air to improve the thermal resistance and therefore overall performance of the sensor. Preliminary simulation studies, demonstrate results, approximately 30 times improvement in responsivity (9.4×103 V/W) and 60% reduction in NEP (5.5 pW/√Hz) as compared to the state-of-the-art sensor. The corresponding rise time and fall time of the device are 6 μs and 35 μs, respectively. In the near future, a pixilated array of the proposed sensor enables the realization of highly sensitive mmW camera for variety of sensing applications.
关键词： Micobolometer,millimeter wave (mmW) imaging,phase-change material (PCM)
更新于2025-09-04 15:30:14