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Self-Powered Solar-Blind Photodetectors Based on <i>?±</i> / <i>?2</i> Phase Junction of
摘要： Self-powered Ga2O3-based solar-blind photodetectors have received attention recently due to the increased demand for energy saving, miniaturization, and high efficiency in devices. An ideal device structure consisting of a Ga2O3-based p-n junction is still difficult to obtain, since p-type doping is a major challenge. Although self-powered devices based on heterojunction are promising, there are two fatal disadvantages: (1) photosensitivity of the non-solar-blind region, on account of the narrower band gap of the heterojunction materials; and (2) poor quality of the epitaxial film due to lattice mismatch. In view of the various polymorphs of Ga2O3, we propose constructing a structure consisting of a Ga2O3 phase junction with α and β phases (α/β phase junction) for self-powered solar-blind photodetectors. The small lattice mismatch and similar band gap between α- and β-Ga2O3 will solve the two problems outlined above. The formation of α- and β-Ga2O3 is expected to result in a type-II band alignment, promoting separation of photogenerated carriers, which transfer through the junction to the corresponding electrodes. Herein, the α/β phase junction of Ga2O3 vertically aligned nanorod arrays with a thickness-controllable β-Ga2O3 shell layer are fabricated by a low-cost and simple process of hydrothermal and postannealing treatment. Two different types of self-powered α/β-Ga2O3 phase junction-based photodetectors, in the form of solid-state type and photoelectrochemical type, are constructed and realized. Our analysis shows that the constructed photodetectors are capable of highly efficient detection of solar-blind signal without any bias voltage. This work demonstrates the usefulness of using the α/β-Ga2O3 phase junction in a self-powered solar-blind photodetector, which is not only energy efficient, but also potentially workable in outer space, at the south and north pole, and other harsh environments without external power for a long time.
关键词： solar-blind photodetectors,phase junction,Ga2O3,α/β phase junction,self-powered
更新于2025-09-23 15:19:57
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Explaining the enhanced photoelectrochemical behavior of highly-ordered TiO2 nanotube arrays: anatase/rutile phase junction
摘要： The effect of calcination temperature on the photoelectrochemical properties of TiO2 nanotube arrays (TNTAs) has been investigated in many studies. Most work focused on improving the photoelectrochemical properties through optimization of the microstructure. In this paper, however, an anatase/rutile phase junction formed in TiO2 nanotubes has been demonstrated to account for the enhancement of the photoelectrochemical performance. Observations by the UV-visible diffuse reflectance spectra, glancing incidence angle X-ray diffraction (GIA-XRD) and electrochemical impedance spectroscopy indicate that the rutile fraction is at the bottom of the nanotubes while the anatase fraction at the body of the nanotubes. The TNTAs with the coexistence of about 60% anatase and 40% rutile exhibit the optimal performance and show the 1.4 times improved photocurrent density compared with the pure anatase TNTAs. Detailed synchrotron radiation photoemission spectroscopy further confirms the existence and effect of the phase junction. The results suggest photogenerated electrons transfer from the rutile phase to anatase phase in the nanotubes due to the band edge alignment, which facilitates the photogenerated carriers separation and transport along the nanotubes and leads to apparent enhancement of the photoelectrochemical behavior.
关键词： photoelectrochemical properties,TiO2 nanotube arrays,phase junction,thermal treatment
更新于2025-09-19 17:15:36
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A novel AH-D-A-type phase junction material to improve photovoltaic performance and device stability in fullerene OSCs
摘要： In order to boost power conversion efficiency (PCE) and operation stability of organic solar cells (OSCs), we propose a new idea of phase junction materials (PJMs) used as a photoactive layer component to improve device performance and stability. For this purpose, a novel PJM of H-TRC8 based on rhodanine unit was designed with a conjugated AH-D-A framework. Here, AH is a hydrogen-donating electron acceptor unit, D-A is an electron donor-acceptor unit. It is found that H-TRC8 has a good carrier-transporting ability, as well as definite hydrogen-bond and D-A interaction with donor/acceptor materials. While H-TRC8 is added into the PBDB-T/PC60BM blend film with 1.0 vol% DIO (1,8-diiodooctane), the resulting blend film exhibited an enhanced absorption and improved morphology. The intermolecular hydrogen bond between H-TRC8 and PBDB-T plays an important role for them, which is confirmed via FT-IR spectra and 2D 1H NMR. As a result, the PBDB-T/PC60BM-based devices with 1.25 wt% H-TRC8 and 1.0 vol% DIO exhibit a significantly improved PCE of 8.06%, which is increased by 20.6% in comparison to that in the binary devices with 1.0 vol% DIO only (PCE = 6.68%). Furthermore, the device stability is significantly enhanced with only 43% PCE roll-off at 150 °C for 120 h. This work indicates that AH-D-A-type PJMs are promising photovoltaic materials used as photoactive-layer components to achieve high-performance fullerene OSCs with high device stability.
关键词： AH-D-A,H-bond,Performance and stability,H-TRC8,Phase junction material
更新于2025-09-19 17:13:59