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Fano resonance between coherent acoustic phonon oscillations and electronic states near the bandgap of photoexcited GaAs
摘要： Impulsive photo-excitation of solids results in a travelling strain pulse which manifests itself as coherent acoustic phonon oscillations. These oscillations have been extensively studied using time-resolved pump-probe spectroscopy. In the present work, we report the generation of extremely long-lived, coherent longitudinal acoustic phonon oscillations in intrinsic GaAs (100), with clear and unambiguous evidence of Fano interference between these oscillations and the continuum of electronic states close to the bandgap. Fano resonance is a widespread phenomenon observed in atomic systems and condensed media that arises from quantum interference between a continuum of quantum states and a discrete quantum state. Among other techniques, Fano resonance has been investigated with respect to optical phonons studied with Raman Spectroscopy. In the present work, we investigate Fano resonance in coherent phonon oscillations generated without the aid of any capping layer, dopants or substrate/interface effects. Since Fano resonance is sensitive to changes in electronic structure, doping and defects, these observations are important to the field of picosecond ultrasonics which is used for non-destructive depth profiling of solids and for carrier diffusion studies.
关键词： GaAs,coherent acoustic phonon oscillations,Fano resonance,quantum interference,pump-probe spectroscopy
更新于2025-09-04 15:30:14
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Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
摘要： Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
关键词： electron-phonon coupling,optical switches,interband transitions,all optical broadband switching,first principles simulation,amorphous selenium thin films,ultrafast defect dynamics,sub-bandgap region,transient defects
更新于2025-09-04 15:30:14
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Band gap modulation of ZrX<sub>2</sub> (X = S, Se, Te) mono-layers under biaxial strain and transverse electric field and its lattice dynamic properties: A first principles study
摘要： The effect of strain on the electronic properties of mono-layers of Zirconium based dichalcogenides ZrX2 (X = S, Se, Te) was studied using density functional theory based first-principles calculations. The variation in band gap due to biaxial tensile as well as compressive strain was calculated in these mono-layers. The modulation in band gap on application of external electric field has also been studied and it is observed that it decreases monotonically on applying a transverse electric field. These mono-layers and their strained structure are found to be dynamically stable as observed from their phonon spectrum. The population analysis in these systems indicates that with decreasing strain the d-population of Zr atoms increases whereas the p-population of S, Se, Te atoms decreases.
关键词： Electric field,ZrTe2,Strain,Phonon,ZrSe2,Electronic properties,ZrS2
更新于2025-09-04 15:30:14
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Physically based Diagonal Treatment of the Self-Energy of Polar Optical Phonons: Performance Assessment of III-V Double-Gate Transistors
摘要： We propose a diagonal approximation for the self-energy that describes the interaction between electrons and polar optical phonons in the framework of nonequilibrium Green’s function transport simulations. Our model is based on the definition of a scaling factor, which renormalizes the local electron-phonon coupling, to take into account the nonlocality of the interaction and provide the correct scattering rates. While previous studies relied on empirical values of this factor, we derive, from basic physical relationships, analytical expressions in the presence of the one- and two-dimensional confinement of phonons. We apply our model to the self-consistent simulation of double-gate p-type transistors made of technologically relevant III-V materials (InAs, InSb, and GaSb). Their performance is benchmarked, for different crystallographic orientations and strain constraints, against the corresponding Si and Ge devices. We find that the electron-polar optical phonon scattering plays a major role in degrading the performance of the III-V devices and typically results in a widening of the performance gap existing between III-V and Si or Ge devices in ballistic transport conditions.
关键词： nonequilibrium Green’s function,electron-phonon scattering,double-gate transistors,self-energy,III-V materials,polar optical phonons
更新于2025-09-04 15:30:14
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Effect of Electron-phonon Scattering on the Thermal Conductivity of Si Nanowires
摘要： Even the effect of electron-phonon scattering on the electronic properties of Si nanowires has been widely studied, its impact on phonon transport has received much less attention. Recent experiments gave the first evidence of a doping-induced reduction of the thermal conductivity in highly B-doped (~5?×?1019?cm-3) Si nanowires with a diameter of 31?nm. Here, we present a model that can fully explain these data. We also simulated the thermal conductivity of P-doped Si nanowires and found a smaller reduction compared to the B-doped samples. Our model includes the effect of incomplete ionization due to interface states, trapped charges, and the dielectric mismatch between nanowire and its surrounding. This effect is most pronounced close to a doping level of 1018?cm-3 for B- and P-doped Si nanowires with an electronic diameter of 31?nm at room temperature. In mitigating the dielectric mismatch, both an increasing diameter and coating the nanowire by an oxide reduce the effect of incomplete ionization. At high doping concentration (~5?×?1019?cm-3) it can be neglected.
关键词： electron-phonon scattering,incomplete ionization,Si nanowires,thermal conductivity,doping
更新于2025-09-04 15:30:14
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Pressure tuning of the thermal conductivity of gallium arsenide from first-principles calculations
摘要： In this paper, the variation of the lattice thermal conductivity of GaAs under pressure within the range of 0–20 GPa at room temperature is investigated by combining first-principles calculations with an iterative solution of the phonon Boltzmann transport equation. Firstly, we calculated the lattice thermal conductivity of GaAs at 12 GPa, which increases by more than 37% in comparison with that under atmospheric pressure. The detailed analysis of phonon heat transport properties shows that the pressure contributes to increased phonon group velocity coupled with decreased phonon relaxation time, resulting in the pressure-induced nonlinear increase of the thermal conductivity of zinc blende GaAs. Besides, not only the structure but also the phonon heat transport properties of GaAs transform from isotropic to anisotropic beyond the phase transition pressure. This study provides a quantitative understanding of the thermal conductivity of GaAs considering pressure-induced phase transitions and highlights the importance of pressure in tuning lattice thermal conductivity, especially in pressure-induced phase change materials.
关键词： first-principles calculations,gallium arsenide,pressure,thermal conductivity,phonon Boltzmann transport equation
更新于2025-09-04 15:30:14
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Electron–phonon coupling in single-layer MoS2
摘要： The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron–phonon coupling parameter λ are obtained by measuring the linewidth of the spin–split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of λ for the upper and lower spin–split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS2. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS2 on Au(111). The fact that the absolute valence band maximum in single-layer MoS2 at K is almost degenerate with the local valence band maximum at Γ can potentially be used to tune the strength of the electron–phonon interaction in this material.
关键词： Density functional theory,Angle-resolved photoemission spectroscopy,Transition metal dichalcogenides,Electron-phonon coupling
更新于2025-09-04 15:30:14
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Quasiparticle dynamics across the full Brillouin zone of Bi2Sr2CaCu2O8+δ traced with ultrafast time and angle-resolved photoemission spectroscopy
摘要： A hallmark in the cuprate family of high-temperature superconductors is the nodal-antinodal dichotomy. In this regard, angle-resolved photoemission spectroscopy (ARPES) has proven especially powerful, providing band structure information directly in energy-momentum space. Time-resolved ARPES (trARPES) holds great promise of adding ultrafast temporal information, in an attempt to identify different interaction channels in the time domain. Previous studies of the cuprates using trARPES were handicapped by the low probing energy, which significantly limits the accessible momentum space. Using 20.15 eV, 12 fs pulses, we show for the first time the evolution of quasiparticles in the antinodal region of Bi2Sr2CaCu2O8+d and demonstrate that non-monotonic relaxation dynamics dominates above a certain fluence threshold. The dynamics is heavily influenced by transient modification of the electron-phonon interaction and phase space restrictions, in stark contrast to the monotonic relaxation in the nodal and off-nodal regions.
关键词： electron-phonon interaction,high-temperature superconductors,cuprate,time-resolved ARPES,nodal-antinodal dichotomy,angle-resolved photoemission spectroscopy,quasiparticles
更新于2025-09-04 15:30:14
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Force-noise spectroscopy by tunneling current deflection sensing
摘要： An electro-mechanical setup for the measurement of force-noise properties in a low-temperature tunneling microscope has been utilized to enable extremely high resolution and acquire force-noise spectra as function of the applied voltage bias. The direct crosstalk of vibrations onto the tunneling current is used to measure the de?ection of a force-sensing cantilever. We demonstrate its capability to measure the mechanical energy of the cantilever, caused by the noise of the force from vacuum tunneling between polycrystalline Iridium electrodes. We observe peak levels of the induced cantilever energy at polarity-symmetric voltages corresponding to dominant peaks of the phonon density of states, which suggests that inelastic transport processes contribute to force ?uctuations.
关键词： inelastic transport processes,force-noise spectroscopy,cantilever deflection,tunneling current,phonon density of states
更新于2025-09-04 15:30:14
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Impact of Low‐Frequency Vibrations on Charge Transport in High‐Mobility Organic Semiconductors
摘要： Despite decades of intensive studies of charge transport in organic semiconductors (OSs), understanding of mechanisms underpinning efficient charge transport in them remains elusive. Recently, it has been suggested that low-frequency (LF) vibrations are a limiting factor of charge transport in high-mobility OSs. Nevertheless, the relationship between the molecular structure, crystal packing, LF vibrations, and charge transport is still obscured. This hinders the focused search of high-mobility OSs so that researchers rely mainly on trial-and-error method. This review presents theoretical and experimental approaches to studying the LF vibrations and their role in charge transport with a focus on recent results. It is anticipated that tight cooperation between experimentalists and theorists will yield an advanced understanding of LF vibrations in OSs and their impact on charge transport. This will guide the design of novel high-mobility organic semiconductors for organic electronics.
关键词： structure–property relationship,organic electronics,Raman spectroscopy,electron–phonon interaction,charge mobility
更新于2025-09-04 15:30:14