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Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators
摘要： We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier’s energy relaxation is faster close to the charge neutrality point (CNP) which can be attributed to localized nature and incompressibility of charge puddles resulting from inhomogeneous charge distribution near CNP. The tunnel-coupling of these puddles (quantum dots) to 1D edge channels can randomize phase memory leading to incoherent inelastic processes. Hot edge carriers, excited by the electric field, relax to equilibrium via thermalization in multiple puddles resulting in the emission of phonons in the puddles. At relatively low temperature (T≤ 10K), the energy relaxation time shows strong temperature dependence (τ_e ∝ T^{-3.5}), which is interpreted as small angle scattering, consistent with resistance saturation at low temperatures.
关键词： Non-linear transport,electron-phonon scattering,energy relaxation mechanisms,inelastic processes,Topological insulators
更新于2025-09-23 15:22:29
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Hot electron thermoreflectance coefficient of gold during electron-phonon nonequilibrium
摘要： The temperature-dependent reflectivity of metals is quantified by the thermoreflectance coefficient, which is a material dependent parameter that depends on the metallic band structure, electron scattering dynamics, and photon wavelength. After short-pulse laser heating, the electronic sub-system in a metal can be driven to temperatures much higher than that of the lattice, which gives rise to unique non-equilibrium electron and phonon scattering dynamics, leading to a “hot electron” thermoreflectance that is different from the traditionally measured equilibrium coefficient. In this work, we analytically quantify and experimentally measure this hot electron thermoreflectance coefficient through ultrafast pump-probe measurements of thin gold films on silica glass and sapphire substrates. We demonstrate the ability to not only quantify the thermoreflectance during electron-phonon nonequilibrium, but also validate this coefficient’s predicted dependence on the absolute temperature of the electronic subsystem. The approach outlined in this work provides a metrology to further understand and quantify excited-state scattering effects on the dielectric function of metals.
关键词： electron-phonon scattering,Pump-probe,Thermoreflectance,Drude model,electronic temperature
更新于2025-09-23 15:21:21
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Interaction of Rydberg excitons in cuprous oxide with phonons and photons: optical linewidth and polariton effect
摘要： We demonstrate that the optical linewidth of Rydberg excitons in Cu2O can be completely explained by scattering with acoustical and optical phonons, whereby the dominant contributions stems from the non-polar optical 3G- and 5G- modes. The consequences for the observation of polariton effects are discussed. We find that an anti-crossing of photon and exciton dispersions exists only for states with main quantum numbers n > 28, so polariton effects do not play any role in the experiments reported up to now.
关键词： polaritons,phonon scattering,Rydberg excitons,cuprous oxide
更新于2025-09-23 15:21:01
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-type PbTe from first principles
摘要： We present an ab initio study that identifies the main electron-phonon scattering channels in n-type PbTe. We develop an electronic transport model based on the Boltzmann transport equation within the transport relaxation time approximation, fully parametrized from first-principles calculations that accurately describe the dispersion of the electronic bands near the band gap. Our computed electronic mobility as a function of temperature and carrier concentration is in good agreement with experiments. We show that longitudinal optical phonon scattering dominates electronic transport in n-type PbTe, while acoustic phonon scattering is relatively weak. We find that scattering due to soft transverse optical phonons is by far the weakest scattering mechanism, due to the symmetry-forbidden scattering between the conduction band minima and the zone center soft modes. Soft phonons thus play the key role in the high thermoelectric figure of merit of n-type PbTe: they do not degrade its electronic transport properties although they strongly suppress the lattice thermal conductivity. Our results suggest that materials like PbTe with soft modes that are weakly coupled with the electronic states relevant for transport may be promising candidates for efficient thermoelectric materials.
关键词： electron-phonon scattering,transport relaxation time approximation,thermoelectric materials,Boltzmann transport equation,n-type PbTe
更新于2025-09-23 15:21:01
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Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion
摘要： Understanding the ultrafast processes corresponding to carrier capture, thermalization and relaxation is essential to design high-speed optoelectronic devices. Here, we have investigated size dependent carrier capture process in InGaN/GaN 20 nm, 50 nm nanowires and quantum well systems. Femto-second transient absorption spectroscopy reveals that the carrier capture is a two-step process. The carriers are captured in the barrier by polar optical phonon scattering. They further scatter into the active region by electron-electron and polar optical phonon scatterings. The capture is found to slow down for quantum confined structures. A significant number of carriers are found to disappear from the barrier during the diffusion process. All the experimental observations are explained in a simulation framework depicting various scattering mechanisms.
关键词： nanowire,polar optical phonon scattering,electron-electron scattering,transient absorption spectroscopy,carrier capture,electron and phonon dynamics
更新于2025-09-19 17:15:36
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Thermoelectric Properties of (100) Oriented Silicon and Nickel Silicide Nanocomposite Films Grown on Si on Insulator and Si on Quartz Glass Substrates
摘要： We have grown (100) oriented composite films of Si and Ni silicide nanocrystals (Ni–Si NC film) on substrates of Si on insulator (SOI) and Si on quartz glass (SOQ). Owing to improvement of carrier transport properties and reduction of the thermal conductivity in the oriented films, they have higher dimensionless figures of merit, ZT of 0.22–0.42 for p-type Ni–Si NC film and 0.08–0.13 for n-type Ni–Si NC film than that of bulk Si (ZT < 0.01) at 30°C. The ZT values of p-type and n-type Ni–Si NC films were increased to 0.65 and 0.40 at 500°C, respectively.
关键词： silicon based thermoelectric materials,nanocomposite films,nickel silicide nanocrystals,silicon nanostructures,phonon scattering
更新于2025-09-19 17:15:36
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Phonon scattering by dislocations in GaN
摘要： Crystal imperfections such as dislocations strongly influence the performance and thermal transport behavior of GaN-based devices. We show that the experimental data used to parameterize the effect of dislocations on the thermal conductivity can be explained using only the reported film thickness and point defect concentrations. The analysis highlights the boundary-scattering-governed reduction of thermal conductivity in GaN, which had been underestimated in earlier models. To quantify the influence of dislocations on the thermal transport in GaN, we adopt a Green’s function approach based on accurate ab-initio interatomic force constants. While calculations at the level of density functional theory are necessary for 3-phonon and point defect scattering, we show that scattering due to dislocations can be satisfactorily approximated using semiempirical potentials. This makes the Green’s function approach to dislocation scattering a quantitatively predictive, yet computationally practical, method for obtaining detailed phonon scattering rates.
关键词： Dislocation,Phonon Scattering,Density Functional Theory,GaN,Thermal Conductivity
更新于2025-09-19 17:15:36
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Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
摘要： This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schr?dinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fr?hlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fr?hlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.
关键词： two-dimensional material,indium selenide,mobility,phonon scattering,high-κ dielectric,field effect transistor
更新于2025-09-19 17:15:36
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Ultrafast acoustic phonon scattering in CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> revealed by femtosecond four-wave mixing
摘要： Carrier scattering processes are studied in CH3NH3PbI3 using temperature-dependent four-wave mixing experiments. Our results indicate that scattering by ionized impurities limits the interband dephasing time (T2) below 30 K, with strong electron-phonon scattering dominating at higher temperatures (with a time scale of 125 fs at 100 K). Our theoretical simulations provide quantitative agreement with the measured carrier scattering rate and show that the rate of acoustic phonon scattering is enhanced by strong spin-orbit coupling, which modifies the band-edge density of states. The Rashba coefficient extracted from fitting the experimental results (γc = 2 eV ?) is in agreement with calculations of the surface Rashba effect and recent experiments using the photogalvanic effect on thin films.
关键词： electron-phonon scattering,carrier scattering,CH3NH3PbI3,four-wave mixing,Rashba effect
更新于2025-09-19 17:13:59
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Observation of a phonon bottleneck in copper-doped colloidal quantum dots
摘要： Hot electrons can dramatically improve the efficiency of solar cells and sensitize energetically-demanding photochemical reactions. Efficient hot electron devices have been hindered by sub-picosecond intraband cooling of hot electrons in typical semiconductors via electron-phonon scattering. Semiconductor quantum dots were predicted to exhibit a "phonon bottleneck" for hot electron relaxation as their quantum-confined electrons would couple very inefficiently to phonons. However, typical cadmium selenide dots still exhibit sub-picosecond hot electron cooling, bypassing the phonon bottleneck possibly via an Auger-like process whereby the excessive energy of the hot electron is transferred to the hole. Here we demonstrate this cooling mechanism can be suppressed in copper-doped cadmium selenide colloidal quantum dots due to femtosecond hole capturing by copper-dopants. As a result, we observe a lifetime of ~8.6 picosecond for 1Pe hot electrons which is more than 30-fold longer than that in same-sized, undoped dots (~0.25 picosecond).
关键词： phonon bottleneck,electron-phonon scattering,hot electrons,colloidal quantum dots,copper-doped
更新于2025-09-16 10:30:52