研究目的
To study the effect of remote phonons arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional InSe field-effect transistors, and to explore mobility behaviors under various conditions.
研究成果
Remote phonons and Fr?hlich interaction play a major role in electron transport in InSe FETs. Mobility is more degraded by HfO2 dielectric than Al2O3 or SiO2, but can be mitigated with a SiO2 interfacial layer. Due to smaller effective masses, mobility increases at higher densities as carriers degenerate, and degradation with reduced layer number is stronger in InSe compared to MoS2.
研究不足
The study is based on simulations and theoretical models, not experimental validation. Coulomb scattering from impurities and interfacial charges is excluded, which may affect low-temperature mobility. The models assume specific parameters and approximations, such as considering only low-frequency phonon modes for high-κ dielectrics.
1：Experimental Design and Method Selection:
The study uses physical modeling by self-consistently solving the Poisson and Schr?dinger equations with effective mass approximation and nonparabolicity correction to account for quantum confinement effects. Mobility is calculated using the Kubo–Greenwood formula, incorporating remote phonon scattering and intrinsic phonon scatterings (acoustic, homopolar, optical phonons, and Fr?hlich interaction).
2：Sample Selection and Data Sources:
Simulated device structures include back-gate and dual-gate InSe FETs with SiO2, Al2O3, and HfO2 dielectrics. Parameters for mobility calculation are taken from previous work, and experimental data from dual-gate InSe FET with hBN insulation is used for calibration.
3：List of Experimental Equipment and Materials:
No specific experimental equipment is mentioned; the study is simulation-based using theoretical models and parameters from literature.
4：Experimental Procedures and Operational Workflow:
Electrostatic characteristics are derived by solving Poisson and Schr?dinger equations. Scattering rates are calculated via Fermi's golden rule, and mobility is computed using the Kubo–Greenwood formula with momentum relaxation time approximation. Simulations are performed for various temperatures, inversion densities, layer numbers, and dielectric configurations.
5：Data Analysis Methods:
Data analysis involves comparing calculated mobilities with experimental results, decomposing contributions from different scattering mechanisms, and analyzing dependencies on temperature, density, and layer thickness.
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