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Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications
摘要： Inorganic halide perovskite quantum dots (IHPQDs) have recently emerged as a new class of optoelectronic nanomaterials that can outperform the existing hybrid organometallic halide perovskite (OHP), II–VI and III–V groups semiconductor nanocrystals, mainly due to their relatively high stability, excellent photophysical properties, and promising applications in wide-ranging and diverse fields. In particular, IHPQDs have attracted much recent attention in the field of photoelectrochemistry, with the potential to harness their superb optical and charge transport properties as well as spectacular characteristics of quantum confinement effect for opening up new opportunities in next-generation photoelectrochemical (PEC) systems. Over the past few years, numerous efforts have been made to design and prepare IHPQD-based materials for a wide range of applications in photoelectrochemistry, ranging from photocatalytic degradation, photocatalytic CO2 reduction and PEC sensing, to photovoltaic devices. In this review, the recent advances in the development of IHPQD-based materials are summarized from the standpoint of photoelectrochemistry. The prospects and further developments of IHPQDs in this exciting field are also discussed.
关键词： photovoltaic devices,PEC sensing,inorganic halide perovskite quantum dots,photocatalysis,photoelectrochemical applications
更新于2025-09-19 17:13:59
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[IEEE 2019 8th International Symposium on Next Generation Electronics (ISNE) - Zhengzhou, China (2019.10.9-2019.10.10)] 2019 8th International Symposium on Next Generation Electronics (ISNE) - Equivalent Circuit Models for Next Generation Photovoltaic Devices with S-shaped I-V Curves
摘要： Certain still un-optimized emergent photovoltaic devices that are being developed for next generation solar cell applications exhibit under illumination an unwanted S-shaped concave kink in their current-voltage characteristics that substantially hinders the photovoltaic device’s energy conversion efficiency. This anomalous behavior shows up in the I-V curves of several kinds of solar cells, such as some organic cells and various other types of still evolving devices, which are promising potential candidates for future photovoltaic applications. The underlying physical phenomena responsible for the detrimental S-shaped kink can be conveniently modeled using lumped-parameter equivalent circuits that adequately replicate the illuminated S-shaped I-V characteristics. We review and discuss here the most prominent types of those equivalent circuit model configurations.
关键词： equivalent circuit model,next-generation photovoltaic devices,S-shaped kink,solar cells,organic solar cells
更新于2025-09-16 10:30:52
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Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices
摘要： The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (Voc) and large short-circuit current density (Jsc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb0.93La0.07(Zr0.6Ti0.4)0.9825O3 (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest Voc and Jsc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the Voc and Jsc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the Voc and Jsc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a Voc of as high as 0.73 V and Jsc of as large as 2.11 μA/cm2. This work opens a new way for developing ferroelectric photovoltaic devices with good properties.
关键词： Film thickness,Ferroelectric thin film,Ferroelectric photovoltaic devices,Depolarized electric field,Inorganic perovskite
更新于2025-09-16 10:30:52
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A quantum dot-silica composite as an efficient spectral converter in a luminescent down-shifting layer of organic photovoltaic devices
摘要： We developed a gradient quantum dot (QD)@polyvinylpyrrolidone (PVP)-silica composite as a spectral converter to improve light harvesting of the photoactive layer in organic photovoltaic (OPV) devices. The spectral converter prepared by a simple sol–gel method served as a luminescent down-shifting (LDS) layer that absorbed ultraviolet and emitted visible light. Re-emitted light energy from the LDS layer appeared within the absorption range of the photoactive donor material of P3HT in the OPV devices. We investigated how the light harvesting ability was affected by the concentration of QD@PVP and the thickness of the LDS layer. The OPV devices with the LDS layer showed increased power conversion efficiency (PCE) from 3.38% to 3.68% compared to pristine OPV devices due to improved incident light transmittance and increased light harvesting.
关键词： spectral converter,organic photovoltaic devices,silica composite,quantum dot,luminescent down-shifting
更新于2025-09-16 10:30:52
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Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices
摘要： Nanostructured quantum well and quantum dot III–V solar cells provide a pathway to implement advanced single-junction photovoltaic device designs that can capture energy typically lost in traditional solar cells. To realize such high-efficiency single-junction devices, nanostructured device designs must be developed that maximize the open circuit voltage by minimizing both non-radiative and radiative components of the diode dark current. In this work, a study of the impact of barrier thickness in strained multiple quantum well solar cell structures suggests that apparent radiative efficiency is suppressed, and the collection efficiency is enhanced, at a quantum well barrier thickness of 4 nm or less. The observed changes in measured infrared external quantum efficiency and relative luminescence intensity in these thin barrier structures is attributed to increased wavefunction coupling and enhanced carrier transport across the quantum well region typically associated with the formation of a superlattice under a built-in field. In describing these effects, a high efficiency (>26% AM1.5) single-junction quantum well solar cell is demonstrated in a device structure employing both a strained superlattice and a heterojunction emitter.
关键词： quantum well solar cells,III–V solar cells,strained superlattices,photovoltaic devices,high-efficiency
更新于2025-09-16 10:30:52
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Silver ants-inspired flexible photonic architectures with improved transparency and heat radiation for photovoltaic devices
摘要： Silver ants forage at extremely high environmental temperatures, the hairs of which play a crucial role in reducing the body temperature via enhanced optical reflection and radiative heat dissipation as a passive daytime radiative cooler. Inspired by the hierarchical feature structure of the hairs, we fabricated the flexible photonic architectures (FPA) on polydimethylsiloxane (PDMS). With some modification to the feature structure, the FPA-PDMS exhibited not only a large emittance in the mid-infrared spectral range, comparable with that of state-of-the-art thermal emitters, but also the record-high transmittance and haze in the visible and near-infrared range, which would be particularly appealing to photovoltaic devices for maximizing sunlight absorption and minimizing parasitic heat. The ease of application of the FPA-PDMS was demonstrated in both emerging perovskite and mature commercial crystalline silicon solar cells, where the FPA-PDMS was electrostatically attached to their glass superstrates or covers and the improvements in photovoltaic characteristics as a result of enhanced light harvesting were confirmed through laboratory measurements. Though the synergetic effects of the improved transparency and heat radiation brought by the FPA-PDMS need to be characterized outdoors in the future, these findings pave the way for suppressing optical and thermal losses simultaneously in opto-electric-thermal coupled devices through learning sophistically evolved photonic architectures from nature.
关键词： Flexible photonic architectures,Photovoltaic devices,Silver ants,Light-thermal management
更新于2025-09-16 10:30:52
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Trap States, Electric Fields, and Phase Segregation in Mixeda??Halide Perovskite Photovoltaic Devices
摘要： Mixed-halide perovskites are essential for use in all-perovskite or perovskite–silicon tandem solar cells due to their tunable bandgap. However, trap states and halide segregation currently present the two main challenges for efficient mixed-halide perovskite technologies. Here photoluminescence techniques are used to study trap states and halide segregation in full mixed-halide perovskite photovoltaic devices. This work identifies three distinct defect species in the perovskite material: a charged, mobile defect that traps charge-carriers in the perovskite, a charge-neutral defect that induces halide segregation, and a charged, mobile defect that screens the perovskite from external electric fields. These three defects are proposed to be MA+ interstitials, crystal distortions, and halide vacancies and/or interstitials, respectively. Finally, external quantum efficiency measurements show that photoexcited charge-carriers can be extracted from the iodide-rich low-bandgap regions of the phase-segregated perovskite formed under illumination, suggesting the existence of charge-carrier percolation pathways through grain boundaries where phase-segregation may occur.
关键词： halide segregation,perovskites,electric fields,trap states,photovoltaic devices
更新于2025-09-16 10:30:52
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Interfacial Engineering in Functional Materials for Dye‐Sensitized Solar Cells || Nanoarchitectures as Photoanodes
摘要： Photovoltaic (PV) devices are the proficient way to obtain electrical energy from solar energy to meet the ever-increasing global energy demand. Silicon (Si)-based PV cells have reached an efficiency of 24.7% though at the cost of sophisticated technologies and expensive techniques [1], hampering low-cost production and limiting their widespread utilization [2]. Some of the drawbacks of the Si-PV devices were overcome by second-generation thin-film PV devices that are lightweight, flexible, and low-cost but are less efficient. The thin-film PV devices suffer from complex deposition process, difficulty in controlling stoichiometry and the presence of structural defects that adversely affects their performance [3]. The third-generation PV technology including organic photovoltaics (OPVs), dye-sensitized solar cells (DSSCs), quantum-dot dye-sensitized solar cells (QD-DSSCs), and perovskite solar cells have fulfilled the condition of low-cost simple fabrication process, and the research focuses is on enhancing the efficiency, performance, and stability [2]. OPVs possess low efficiency but consist of toxic materials, while perovskite solar cells suffer from moisture instability and poor reproducibility. DSSCs offer a lot of advantages such as excellent stability, low toxicity, good conversion efficiency [4], simple device design, and low-cost fabrication process that supports large-scale production [2]. Even though the highest certified conversion efficiency of DSSCs (11–13%) [4] is half of the advanced thin film or crystalline (26.4%, 27.6%, respectively), their unique functionalities make them attractive for research [5].
关键词： Dye-sensitized solar cells,Photovoltaic devices,Quantum-dot dye-sensitized solar cells,Silicon-based PV cells,Thin-film PV devices,Low-cost fabrication,Conversion efficiency,Perovskite solar cells
更新于2025-09-12 10:27:22
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Doped quaternary metal chalcogenides Cu2ZnSnS4 nanocrystals as efficient light harvesters for solar cell devices
摘要： In this study, we report highly stable photoactive quaternary metal chalcogenide Cu2ZnSnS4 nanocrystals synthesis from low cost, ecofriendly, non-toxic and earth-abundant elements for photovoltaic devices. Their electro-optical properties such as, tunable band gap, high-absorption coefficient and wide absorption window make them highly suitable materials to be utilized as absorber layer and counter electrode in various types of solar cells. For this purpose, first we synthesized Cu2ZnSnS4 nanocrystals by colloidal, co-precipitation, wet chemical and hydrothermal methods using stabilizing agents under variable reaction conditions. Afterwards, hydrothermal method was employed to synthesize nanocrystals of Cu2CoSnS4, Cu2FeSnS4, Cu2SrSnS4 and Cu2NiSnS4 by replacing Zn with Co, Fe, Sr and Ni metals. The UV–Vis absorption spectra indicate the nanocrystals can absorb entire visible region of electromagnetic radiation and their band gaps range from 1.5 to 1.7 eV. The X-ray diffraction (XRD) patterns confirm the formation of kieserite phase of all nanocrystals with a crystallite size of approximately 6–10 nm. These nanocrystals are coated on surface of the synthesized ZnO nanoparticles to study their application as absorbing layer in quantum dots-sensitized solar cells (QDSSCs). Moreover, they were adsorbed on ITO substrate to study their utilization as counter electrode of dye-sensitized solar cells (DSSCs). The solar cells exhibit efficiencies of 1.2–1.8%, which prove the synthesized nanocrystals can perform excellent role as light absorber and counter electrode in any kind of solar cell device.
关键词： solar cell devices,light harvesters,photovoltaic devices,dye-sensitized solar cells,quantum dots-sensitized solar cells,Cu2ZnSnS4 nanocrystals
更新于2025-09-12 10:27:22
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Influence of single-walled carbon nanotubes induced exciton dissociation improvement on hybrid organic photovoltaic devices
摘要： Torch-plasma-grown single-walled carbon nanotubes (SWCNTs) are integrated with regioregular poly(3-hexylthiophene) (P3HT) and a fullerene derivative 1-(3-methoxycarbonyl) propyl-1-phenyl[6,6]C61 (PCBM) as a hybrid photoactive layer for bulk heterojunction solar cell devices. We demonstrate that molecular information could be accurately obtained by time-of-flight secondary ion mass spectrometry through the hybrid organic photoactive solar cell layers when sputtering is performed using a Cs+ 2000 eV ion source. Furthermore, the photovoltaic (PV) performance of the fabricated devices show an increase in the short-circuit current density (Jsc) and the fill factor (FF) as compared to the pristine devices fabricated without SWCNTs. The best results are obtained with 0.5 wt. % SWCNT loads, where an open-circuit voltage (VOC) of 660 mV is achieved, with a Jsc of 9.95 mA cm?2 and a FF of 54%, leading to a power conversion efficiency of 3.54% (measured at standard test conditions, AM1.5 g). At this optimum SWCNT concentration of 0.5 wt. %, and to further understand the charge-transfer mechanisms taking place at the interfaces of P3HT:PCBM:SWCNT, Jsc is measured with respect to the light intensity and shows a linear dependency (in the double logarithmic scale), which implies that losses in the charge carrier are rather governed by monomolecular recombination. Finally, our results show that our hybrid devices benefit from the fullerene electron accepting nature and from the SWCNT fast electron transportation feature that improve substantially the exciton dissociation efficiency. The influence of the SWCNTs on the Fermi level and the work function of the photoactive composite and its impact on the PV performance is also investigated.
关键词： single-walled carbon nanotubes,bulk heterojunction,PCBM,hybrid organic photovoltaic devices,photovoltaic performance,P3HT,exciton dissociation
更新于2025-09-12 10:27:22