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P3HT with Zn(C <sub/>6</sub> F <sub/>5</sub> ) <sub/>2</sub> as p‐Type Dopant for the Enhanced Performance of Planar Perovskite Solar Cells
摘要： The molecular organic Lewis acid bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an efficient p-type dopant for poly(3-hexylthiophene-2,5-diyl) (P3HT), to be used as hole-transporting material (HTM) in perovskite solar cells (PSCs) for the first time. To date, the most efficient PSCs use lithium bis(trifluoromethane) sulfonimide lithium salt (LiTFSI) and 4-tert-butylpyridine (tBP) as standard additives for HTMs. However, such dopants can induce deleterious effects on device stability. Herein, the effect of the concentration of Zn(C6F5)2 in P3HT HTM on the performance of PSCs is investigated. The P3HT-based PSCs using a low concentration of the dopant (0.025 mol%) in the HTM layer exhibit the best performance and the highest power conversion efficiency (PCE) of 17.49%, which is almost 3.5% higher than the achieved PCE for pristine P3HT-based PSCs. The origin of the improved performance for PSCs is further investigated, by studying the conductivity and hole mobility of the thin films based on pristine and doped P3HT. Adding a small amount of Zn(C6F5)2 to P3HT increases its thin-film hole mobility and its hole extraction ability.
关键词： Lewis acid dopants,poly(3-hexylthiophene-2,5-diyl),perovskite solar cells,hole-transporting materials
更新于2025-09-19 17:13:59
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A model for charge transport in semicrystalline polymer thin films
摘要： A model for simulating the charge transport properties of semicrystalline polymer (SCrP) using Monte Carlo simulation is reinvented. The model is validated by reproducing the experimentally observed ?eld and temperature dependence of mobility in Poly(3-hexylthiophene-2,5-diyl) (P3HT) thin ?lms. This study also provides a new physical insight to the origin of much debated negative ?eld dependence of mobility (NFDM) observed at low electric ?eld strengths in P3HT thin ?lms. The observed NFDM, which is not explainable with the mechanisms proposed earlier, is attributed to the weak dependence of transit time on the applied electric ?eld strengths. In the semicrystalline ?lms, the charge transport takes place mostly through the crystalline regions, in which the charge transport is weakly dependent on the strength of the applied electric ?eld. In addition, a possible explanation for the origin of Arrhenius temperature dependence of mobility (lnμ / 1/T) commonly observed in SCrP thin ?lms is also proposed.
关键词： Monte Carlo simulation,charge transport,poly(3-hexylthiophene-2,5-diyl),semicrystalline polymers,negative ?eld dependence of mobility
更新于2025-09-09 09:28:46