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Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes
摘要： Photodiodes and integrated optical receivers operating at 1.55 micrometer (μm) wavelength are crucial for long-haul communication and data transfer systems. In this paper, we report C-band InAs quantum dash (Qdash) waveguide photodiodes (PDs) with a record-low dark current of 5 pA, a responsivity of 0.26 A/W at 1.55 μm, and open eye diagrams up to 10 Gb/s. These Qdash-based PDs leverage the same epitaxial layers and processing steps as Qdash lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers, manifesting themselves as a promising alternative to their InGaAs and Ge counterparts in low-power optical communication links.
关键词： C-band communication,photodiodes,optoelectronics,low dark-current,quantum dashes
更新于2025-09-23 15:19:57
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Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate
摘要： Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition thickness and V/III ratio. Surface QDashes morphologies have been characterized by atomic force microscopy whereas the ones buried in active region have been investigated by transmission electron microscope with high resolution X-ray Energy Dispersive Spectroscopy to confirm the antimony composition. Double channel waveguide laser with 40 μm width ridge has been fabricated by standard optical lithography and wet etching. Pulsed room temperature operation demonstrates the wavelength from 1.72 to 1.79 μm for different injection currents. In addition, the laser peak output power can exceed 600 mW with 12.8% of differential quantum efficiency and even under continuous wave operation, the maximum optical power still remains 26 mW.
关键词： room temperature operation,InAsSb,laser,quantum dashes,InP substrate
更新于2025-09-11 14:15:04