研究目的
Investigating the room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate.
研究成果
The study successfully demonstrated room temperature continuous wave operation of a single-stack InAsSb self-assembled QDashes laser near 1.8 μm on InP (001) substrate, achieving a peak output power exceeding 600 mW and a maximum optical power of 26 mW under continuous wave operation. These results confirm the potential of InAsSb QDashes for mid-infrared laser applications.
研究不足
The study is limited by the single-stack design of the QDashes laser, which may not provide sufficient material gain for higher performance. The incorporation of antimony into the lattice is challenging, leading to lower than expected Sb composition in the QDashes.
1：Experimental Design and Method Selection:
The study utilized metalorganic vapor phase epitaxy (MOVPE) for growing single-stack InAsSb self-assembled quantum dashes on InP (001) substrate under optimized growth conditions.
2：Sample Selection and Data Sources:
InAsSb quantum dashes were characterized using atomic force microscopy (AFM) and transmission electron microscope (TEM) with high resolution X-ray Energy Dispersive Spectroscopy (EDS).
3：List of Experimental Equipment and Materials:
Equipment included an Aixtron 3 × 2 FT close-coupled showerhead MOVPE, AFM, TEM, and a NICOLET 8700 FTIR spectrometer. Materials included trimethylindium, triethylgallium, trimethylantimony, diethylzinc, arsine, phosphine, and silane.
4：Experimental Procedures and Operational Workflow:
The process involved epitaxial wafer growth, characterization of QDashes morphology and optical properties, fabrication of double channel waveguide lasers, and measurement of laser performance under pulsed and continuous wave operations.
5：Data Analysis Methods:
The study analyzed photoluminescence spectra, laser output power, and differential quantum efficiency.
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