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Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis
摘要： InGaN/GaN multi-quantum-well (MQW) solar cells are investigated with temperature-dependent DC and AC analysis, and the effects of differing QW number and thickness are determined. The carrier transport is shown to be dominated by thermionic emission rather than tunneling at elevated temperature but limited by recombination outside the depletion region. Temperature-dependent AC parameters of the III-N MQW devices in high-level injection are determined through a refined AC circuit model of the device. It is shown that the use of AC small-signal analysis and its ability to extract stored charge in the QWs, the comparison of built-in potential to VOC, and other solar cell critical values allows a device designer insight not possible via DC analysis alone. This critical data suggests that the number of QWs and total depletion volume needs to be matched to the operational temperature of a given high temperature solar cell.
关键词： AC circuit model,multi-quantum-well,solar cells,recombination,VOC,DC and AC analysis,depletion region,built-in potential,InGaN/GaN,thermionic emission,carrier transport,temperature-dependent
更新于2025-09-19 17:13:59
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Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices
摘要： Nanostructured quantum well and quantum dot III–V solar cells provide a pathway to implement advanced single-junction photovoltaic device designs that can capture energy typically lost in traditional solar cells. To realize such high-efficiency single-junction devices, nanostructured device designs must be developed that maximize the open circuit voltage by minimizing both non-radiative and radiative components of the diode dark current. In this work, a study of the impact of barrier thickness in strained multiple quantum well solar cell structures suggests that apparent radiative efficiency is suppressed, and the collection efficiency is enhanced, at a quantum well barrier thickness of 4 nm or less. The observed changes in measured infrared external quantum efficiency and relative luminescence intensity in these thin barrier structures is attributed to increased wavefunction coupling and enhanced carrier transport across the quantum well region typically associated with the formation of a superlattice under a built-in field. In describing these effects, a high efficiency (>26% AM1.5) single-junction quantum well solar cell is demonstrated in a device structure employing both a strained superlattice and a heterojunction emitter.
关键词： quantum well solar cells,III–V solar cells,strained superlattices,photovoltaic devices,high-efficiency
更新于2025-09-16 10:30:52
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Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
摘要： The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 × 1017 cm–3, 1 × 1018 cm–3, 3 × 1018 cm–3 and 6 × 1018 cm–3, in GaN barriers is investigated. Increasing Si-doping concentration leads to better transport property, resulting in smaller series resistance (Rs). However, the crystal quality degrades when Si-doping concentration is over 1 × 1018 cm–3, which reduces the external quantum efficiency, short circuit current density and open circuit voltage. As a result, the sample with a slight Si-doping concentration of 4 × 1017 cm–3 exhibits the highest conversion efficiency.
关键词： Si doping,InGaN/GaN,multiple quantum well,solar cells
更新于2025-09-12 10:27:22