研究目的
Investigating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis to understand the effects of differing QW number and thickness on carrier transport and recombination.
研究成果
The study concludes that the performance of InGaN/GaN MQW solar cells at elevated temperatures is significantly influenced by the number of QWs and QB thickness, with carrier transport dominated by thermionic emission at high temperatures but limited by recombination outside the depletion region. The use of AC small-signal analysis provides deeper insights into device physics, suggesting that optimizing the MQW design to match the operational temperature is crucial for high-performance solar cells.
研究不足
The study is limited by the material issues inherent in InGaN solar cells, such as lattice mismatch, polarization-induced electric fields, and low p-type doping. Additionally, the analysis assumes negligible temperature-dependence of spontaneous polarization and pyroelectric coefficients, which may not fully capture the material behavior at elevated temperatures.
