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633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
摘要： This work investigates the in?uence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 lm. Using 8-lm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum ef?ciency of 1.6% at 20 mA. The improved external quantum ef?ciency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.
关键词： InGaN,n-GaN layers,residual stress,red LEDs,electroluminescence
更新于2025-09-23 15:19:57
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Demonstration of low forward voltage InGaN-based red LEDs
摘要： Here we report InGaN-based red light-emitting diodes (LEDs) grown on (201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
关键词： InGaN,β-Ga2O3 substrates,red LEDs,multiple-quantum-well structures,strain-compensating layers
更新于2025-09-16 10:30:52