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Study on the element segregation and Laves phase formation in the laser metal deposited IN718 superalloy by flat top laser and gaussian distribution laser
摘要： The element segregation, Laves phase formation, and mechanical properties of the laser metal deposited IN718 superalloy by the flat top laser beam (FTLB) and gaussian distribution laser beam (GDLB) are studied. It is found that the Laves phase formation in the gaussian distribution laser deposited IN718 (GDLD-IN718) is substantially higher than that in the flat top laser deposited IN718 (FTLD-IN718). The higher production of the Laves phase in the GDLD-IN718 contributes to the higher microhardness and lower tensile strength (about 20% reduction) of the as-deposited IN718 than that of the FTLD-IN718. The element redistribution behavior in the laser rapid solidification under both of the lasers are also studied through the finite element simulation. The results show that the severe laser energy concentration in the center of the GDLB produces higher molten pool temperature, lower horizontal thermal gradient to vertical thermal gradient ratio (GX/GZ) of the solid-liquid interface. These typical thermal characteristic of the GDLB generated molten pool eventually results in a lower redistribution coefficient of the alloying elements and as a result, the interdendritic element segregation and Laves phase formation are dramatically improved in the GDLD-IN718. The present comparative study proves that the FTLB is more superior for the laser additive manufacturing than that of the GDLB.
关键词： Dendritic growth,Laser metal deposition,Element segregation,Redistribution coefficient,Laves phase
更新于2025-11-21 11:18:25
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Composition and Strain Evolution of Undoped Si <sub/>0.8</sub> Ge <sub/>0.2</sub> Layers Submitted to UV-Nanosecond Laser Annealing
摘要： Ultraviolet Nanosecond Laser Annealing (UV-NLA, XeCl laser, 308 nm, 145 ns) was performed on 30 nm-thick Si0.8Ge0.2 epitaxial layers. The various regimes encountered after single pulse UV-NLA are described and discussed, including submelt, SiGe layer partial and total melt, as well as melt beyond the SiGe epi-layer. Energy densities around 2.00 J/cm2 and above led to the formation of pseudomorphic layers with strong Ge redistribution. Starting from uniform Si0.8Ge0.2 layers, Ge segregation towards the surface resulted in the formation of a Ge-rich surface layer with up to 55% Ge for 2.00 J/cm2. Such pseudomorphic SiGe layers with graded composition and a Ge-rich surface layer may find some promising applications such as contact resistance lowering in doped layers.
关键词： SiGe,pseudomorphic,contact resistance,Ge redistribution,Ultraviolet Nanosecond Laser Annealing
更新于2025-11-14 14:32:36
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Theoretical elaboration about the excited state dynamical behaviors for a novel fluorescent sensor
摘要： Using the density functional theory (DFT) and time‐dependent density functional theory (TDDFT) methods, we theoretically explore a novel fluorescent sensor molecule (abbreviated as “2”) (Sensors Actuat B‐Chem. 2018, 263, 585). Because of its symmetry, three stable structures can be located, ie, 2‐enol, 2‐SPT, and 2‐DPT forms in both S0 and S1 states. Via comparing the bond lengths and bond angles involved in the hydrogen bonding moieties, we find the dual intramolecular hydrogen bonds should be strengthened in the S1 state. And based on infrared (IR) vibrational simulations, we further confirm the strengthening dual hydrogen bonds. Upon the photo‐excitation process, the charge redistribution via frontier molecular orbitals (MOs) reveals the tendency of excited state intramolecular proton transfer (ESIPT) reaction. In addition, the constructed S0‐state and S1‐state potential energy curves demonstrate that the excited state single proton transfer (ESSPT) should be the most supported one from 2‐enol to 2‐SPT form. In view of the S1‐state stable 2‐SPT and 2‐DPT structures as well as the fluorescence peaks of them, we can further confirm the ESSPT mechanism for 2 chemosensor. This work not only clarifies the excited state behaviors of 2 system but also successfully explain the previous experimental phenomenon.
关键词： charge redistribution,ESIPT,potential energy curves,intramolecular hydrogen bond
更新于2025-09-23 15:23:52
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Role of the La/K Compositional Ratio in the Properties of Waveguides Written by Fs-Laser Induced Element Redistribution in Phosphate-Based Glasses
摘要： The local modification of the composition of glasses by high repetition femtosecond laser irradiation is an attractive method for producing photonic devices. Recently, the successful production of waveguides with a refractive index contrast (?n) above 10?2 by fs-laser writing has been demonstrated in phosphate glasses containing La2O3 and K2O modifiers. This large index contrast has been related to a local enrichment in lanthanum in the light guiding region accompanied by a depletion in potassium. In this work, we have studied the influence of the initial glass composition on the performance of waveguides that are produced by fs-laser induced element redistribution (FLIER) in phosphate-based samples with different La and K concentrations. We have analyzed the contribution to the electronic polarizability of the different glass constituents based on refractive index measurements of the untreated samples, and used it to estimate the expected index contrast caused by the experimentally measured local compositional changes in laser written guiding structures. These estimated values have been compared to experimental ones that are derived from near field images of the guided modes with an excellent agreement. Therefore, we have developed a method to estimate before-hand the expected index contrast in fs-laser written waveguides via FLIER for a given glass composition. The obtained results stress the importance of considering the contribution to the polarizability of all the moving species when computing the expected refractive index changes that are caused by FLIER processes.
关键词： photonic devices,waveguides,element redistribution,ion migration,fs-laser writing,refractive index contrast,glass
更新于2025-09-23 15:19:57
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Modeling of high-fluence irradiation of amorphous Si and crystalline Al by linearly focused Ar ions
摘要： Long time ion irradiation of surfaces under tilted incidence causes formation of regular nanostructures known as surface ripples. The nature of mechanisms leading to ripples is still not clear, this is why computational methods can shed the light on such a complex phenomenon and help to understand which surface processes are mainly responsible for it. In this work, we analyse the surface response of two materials, a semiconductor (silicon) and a metal (aluminium) under irradiation with the 250 eV and 1000 eV Ar ions focused at 70° from the normal to the surface. We simulate consecutive ion impacts by the means of molecular dynamics to investigate the effect on ripple formation. We find that the redistribution mechanism seems to be the main creator of ripples in amorphous materials, while the erosion mechanism is the leading origin for the pattern formation in crystalline metals.
关键词： nanostructuring,ripple formation,surface,erosion,redistribution
更新于2025-09-19 17:15:36
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Mechanism of stimulated Mie scattering: Light-induced redistribution of self-assembled nanospheres of two-photon absorbing chromophore
摘要： We report the observation of backward stimulated Mie scattering (SMS) due to light-field induced spatial redistribution of self-assembled nanospheres of a two-photon resonant organic chromophore in water, pumped by ～10-ns laser pulses of ～816-nm wavelength. The pump-energy threshold for generating backward stimulated scattering in such a system is remarkably lower than that in pure water. The gain of backscattering originates from an induced Bragg grating that reflects partial energy from the pump beam into the backward Mie scattering beam. Based on the experimental fact that the time-delay of the SMS pulse onset depends on both the pump level and the viscosity of the solvent, a physical model of SMS generation is proposed. Our experimental results have shown that the major contribution to the formation of an induced Bragg grating is spatial redistribution of nanoparticles suspended in the liquid. These nanoparticles are driven by a force that is proportional to the intensity gradient of the standing-wave field resulting from interference between the forward pump beam and the backward Mie scattering beam. When the nanoparticle motion is frozen in a gel-like medium, no SMS is observed, which experimentally supports the validity of the proposed physical model.
关键词： two-photon absorbing chromophore,stimulated Mie scattering,nanospheres,light-induced redistribution,Bragg grating
更新于2025-09-19 17:13:59
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Chemical Bonding States and Dopant Redistribution of Heavily Phosphorus-doped Epitaxial Silicon Films: Effects of Millisecond Laser Annealing and Doping Concentration
摘要： We investigated the effect of millisecond (ms) laser annealing and doping concentration on the chemical bonding states and dopant behaviors of P-doped epitaxial Si (Si:P) layers grown on Si (100) substrates using high-resolution X-ray photoelectron spectroscopy (HR-XPS), secondary-ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) measurements. Our XPS results showed that the intensities of P 2p peaks for Si:P films were increased with P concentration and subsequent laser annealing. From the SIMS and AES measurement results, we found that P atoms were slightly accumulated at the near-surface region of the Si:P film by the laser annealing, while macroscopic P concentration being maintained in the whole Si:P films without significant diffusion of P atoms toward the Si (100) substrate. In addition, we performed ex-situ HF cleaning on the as-grown and laser-annealed Si:P films in order to precisely measure the change in chemical states and dopant distribution at the near-surface region. The intensities of the P 2p peak in the as-grown Si:P films were increased after the HF cleaning due to the removal of native oxide layers from the Si:P films. In contrast, the decrease in P 2p peak intensities was observed in the laser-annealed Si:P films after the HF cleaning, indicating the dopant loss from the near-surface region with native oxide removal.
关键词： Millisecond laser annealing,Dopant redistribution,Chemical bonding states,Phosphorus-doped epitaxial silicon films,Doping concentration
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Electronics Packaging (ICEP) - Niigata, Japan (2019.4.17-2019.4.20)] 2019 International Conference on Electronics Packaging (ICEP) - High-speed High-density Cost-effective Cu-filled Through-Glass-Via Channel for Heterogeneous Chip Integration
摘要： A topside Cu-filled through-glass via ("Cu bridge") is presented as a novel transmission channel. The simulated signal transmission loss of the Cu bridge was as low as 0.04 dB at a signal frequency of 18 GHz, corresponding to the PCI Express 5.0 bus standard. Its signal transmission loss was less than 0.13 % in a typical long-reach SerDes channel with a loss of 30 dB. The minimum pitch of the Cu bridge was as narrow as 100 μm, which meets the requirements for increased signal I/O. The simple few-step fabrication of the Cu bridge effectively reduces the cost of manufacturing glass interposers. This is a great advantage compared to silicon interposers, which require a complicated process to fabricate Cu through-silicon vias. A glass substrate semi-additive and embedded with Cu bridges supports damascene-based redistribution layers, which increases the number of potential packaging configurations. This Cu bridge is thus a promising approach to next-generation heterogeneous integration based on 2.nD interposers.
关键词： Interposer,TSV,2.nD,TGV,Redistribution layer,Heterogeneous integration,2.5D,Semi-additive process,2.1D,Damascene,RDL,Through-glass via,Through-silicon via
更新于2025-09-16 10:30:52
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Experimental investigation on a new hybrid laser process for surface structuring by vapor pressure on Ti6Al4V
摘要： Besides conventional structuring processes such as turning, milling or photo-chemical etching, laser processes are increasingly being used for surface structuring of metals. These laser processes differ fundamentally in that structuring is carried out either by material removal or by material redistribution. In this study, a new hybrid process of material ablation by means of pulsed laser radiation and material redistribution based on a remelting process by means of cw laser radiation is experimentally investigated. Besides an introduction to this new hybrid process, we give a detailed description of the equipment and methods used as well as surface structures produced on Ti6Al4V. A melt pool was generated on a prepared Ti6Al4V surface using cw laser radiation with a laser beam diameter of 520 μm, laser power of 220 W, and a scanning velocity of 100 mm/s. In order to create surface structures, simultaneously, superimposed pulsed laser radiation with a laser beam diameter of 65 μm, pulse duration of 60 ns, a maximum pulse energy of 0.35 mJ, and a pulse frequency of 50 kHz was used to evaporate small amounts of molten material from the melt pool. This localized evaporation of molten material is assumed to create vapor pressure that deforms the melt pool surface and therefore leads to surface structures. Our results indicate that by pulsed laser radiation capillary surface waves with a wavelength of the doubled laser beam diameter are excited on the melt pool surface. This forced excitation of capillary surface waves result in surface structures that are analyzed after solidification by means of white light interferometry. Based on this analysis we derived an oscillation frequency of ν = 2.27 (± 0.16) kHz for the excited capillary surface wave as well as an effective kinematic viscosity of μ = 0.1328 cm2 s-1 for the damping of this surface oscillation during solidification. In terms of structural features, we achieved surface structures with heights of up to 100 μm. Furthermore, structure height controllably scales in dependence on pulse energy and number of laser pulses as long as no ejection of molten material takes place. Finally, a comparison of the redistributed material volume per time shows that we achieved a volume redistribution rate of 28.37 mm3/min, which is significantly bigger than has been achieved with other laser texturing techniques so far and demonstrates the high potential of this new hybrid technique not only for surface structuring purposes.
关键词： surface structuring,melt pool,material redistribution,capillary surface wave,Ti6Al4V,remelting
更新于2025-09-16 10:30:52
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Vibrational Energy Redistribution between CH Stretching Modes in Alkyl Chain Monolayers Revealed by Time-Resolved Two-Color Pump–Probe Sum Frequency Spectroscopy
摘要： The vibrational dynamics of the various CH stretching modes in a fatty acid Langmuir?Blodgett ?lm was studied using a resonant narrowband infrared (IR) laser pulse for pumping and a broadband femtosecond IR visible pulse pair for detection in a sum frequency spectroscopy setup. The resulting two-dimensional spectra indicate that pumping either the antisymmetric methyl or methylene stretch results in the transfer of energy to the other modes on a time scale faster than 2 ps. This rapid process is followed by energy redistribution to other modes, presumably the bending and internal rotational modes, with a time constant of approximately 85 ps. The formation of gauche defects is not observed within the ?rst 250 ps. The whole spectrum recovers on a time scale of several nanoseconds, indicating dissipation of the excitation energy into the substrate.
关键词： CH stretching modes,energy redistribution,vibrational dynamics,sum frequency spectroscopy,Langmuir?Blodgett ?lm
更新于2025-09-12 10:27:22