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Kink Suppression and High Reliability of Asymmetric Dual Channel Poly-Si Thin Film Transistors for High Voltage Bias Stress
摘要： Asymmetrically designed polycrystalline silicon (poly-Si) thin film transistors (TFT) were fabricated and investigated to suppress kink effect and to improve electrical reliability. Asymmetric dual channel length poly-Si TFT (ADCL) shows the best reduction of kink and leakage currents. Technology computer-aided design simulation proves that ADCL can induce properly high voltage at floating node of the TFT at high drain-source voltage (VDS), which can mitigate the impact ionization and the degradation of the transconductance of the TFT showing high reliability under the hot carrier stress.
关键词： kink,reliability,TFT,hot carrier stress,poly-Si
更新于2025-09-23 15:23:52
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The Study of Electroluminescence and Reliability of Polyimide Films in High DC Fields
摘要： Electroluminescence (EL) intensity of the polyimide (PI) films was tested under dc high electric field by home-made experimental device. The results showed that the EL intensity of PI films increased along with the electric field. EL intensity is approximately to background intensity when the electric-field intensity was less than 2.00 MV/cm. EL intensity increases along with increasing the electric field when electric-field intensity greater than 2.00 MV/cm. When electric-field at 2.80 MV/cm, EL intensity increasing strongly suggests that the excitation process related to hot electrons accelerated by the field approaching a critical threshold. Meanwhile, this work elaborates a method to deal with identical samples get different experimental data by using Weibull distribution method, and the concept of the reliability was presented. The nine groups of EL experimental data were analyzed, and the result showed that the lifetime of mid-value (t = 164.9 min). Mid-value of the breakdown field is E = 2.76 MV/cm.
关键词： reliability,breakdown,Weibull distribution,electroluminescence,PI films
更新于2025-09-23 15:23:52
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Thermal Analysis on the Degradation of GaN HEMTs
摘要： High temperature operation(HTO) experiments were performed on industrial GaN HEMTs devices. Several degradation failure modes of DC parameters such as transconductance reduction, threshold voltage shift, and gate leakage current increase were identified. The vertical failure localization and analysis of the devices were carried out by electrical method. The results show that the increase of the degradation of the die attach layer is the main reason for the increase of the junction temperature and thermal resistance of the devices. Furthermore, the results are analyzed by three-dimensional X-ray imaging confirming the degradation of the die attach layer. The voids in the die attach layer expanded during the high temperature operation stress experiments, led to a worse heat dissipation performance, which resulting in increased junction temperature, and further accelerate the performance degradation of the devices.
关键词： junction temperature,thermal resistance,reliability,GaN
更新于2025-09-23 15:22:29
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - Screen Printed Vias for a Flexible Energy Harvesting and Storage Module
摘要： This case study evaluates a highly flexible screen printed through-hole-via using silver microparticle inks for applications in energy harvesting and storage modules. The printed vias fabrication and reliability are evaluated by means of a double sided screen-printing method and repetitive (cyclic) bending tests. Vias, in 125 μm thick PET, were laser cut (50, 100, 150, and 200 μm nominal diameter) then filled, and simultaneously connected to adjacent vias, by screen printing. To investigate the use of the printed via in a monolithic energy module, the vias were used for the fabrication of a flexible printed supercapacitor (aqueous electrolyte and carbon electrode). The results indicate that the lower viscosity silver ink (DuPont 5064H) does not fill the via as effectively as the higher viscosity ink (Asahi LS411AW), and only the sidewall of the via Conversely, the Asahi silver paste fills the via more thoroughly and exhibited a 100 % yield (1010 vias; 100 μm nominal via diameter) with the 2-step direct screen-printing method. The bending test showed no signs of via specific breakdown after 30 000 cycles. The results indicate that this via filling process is likely compatible with roll-to-roll screen printing to enable multi-layered printed electronics devices.
关键词： flexible and printed electronics,screen printing,printed vias,bending reliability,energy module
更新于2025-09-23 15:22:29
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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
摘要： This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
关键词： Focused-Ion Beam,Short circuit,Gate-oxide breakdown,Gate oxide,Degradation,Defects,Reliability,SiC MOSFET,Failure analysis,SEM
更新于2025-09-23 15:22:29
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Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs
摘要： The impact on self-heating mechanisms observed in GaN HEMTs fabricated on Si substrates is studied by means of a cellular Monte Carlo particle-based device simulator. Within this framework, the thermal effects are included through an energy-balance equation for phonons allowing for self-consistently coupling the charge and heat transport. First, the advanced electrothermal model of an experimental device is developed and calibrated to measured dc characteristics, showing an accurate description throughout the IDS(VGS?VDS) space, as a result of capturing the temperature dependence of the scattering processes that modify the charge transport. Then, the model is used to assess the effect of lateral scaling, i.e., reducing the source-to-gate LSG and gate-to-drain LGD dimensions, in terms of detailed temperature maps obtained for the acoustic and optical phonon modes as well as the electric field and carrier velocity profiles. It is found that the hot spot in the channel is not located at the peak electric field as predicted by previous methods, but instead, it is shifted toward the drain up to 32 nm. Furthermore, it is shown that, while scaled devices offer improved dc and small-signal ac performance, they are subjected to temperatures up to 15% higher in the channel as compared to the original nonscaled device when dissipating the same dc power, and the temperature distribution throughout the device shows a strong correlation with the scaled layout.
关键词： reliability,HEMTs,Monte Carlo methods,self-heating,scaling,GaN
更新于2025-09-23 15:22:29
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Mechanisms of adhesion degradation at the photovoltiac module's cell metallization-encapsulant interface
摘要： Adhesion measurements and chemical characterization of the encapsulant/silver metallization interface of a photovoltaic (PV) module through temperature, humidity, and voltage bias exposures were conducted. Results demonstrate two independent degradation mechanisms: (a) with voltage bias, the ionic conduction of Na+ ions through the encapsulant results in the formation of sodium silicate at the silver metallization surface, thereby weakening that interface and (b) with moisture ingress, dissociation of the silane bonding to silver in the silver oxide similarly weakens this interface resulting in significantly lower debond energies.
关键词： photovoltaic module,screen printing,reliability,encapsulation,degradation,metallization
更新于2025-09-23 15:22:29
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Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors
摘要： In the present study, the reliability of transparent NiO gated AlGaN/GaN heterostructure field-effect transistors have been investigated. Compared with the TiN Schottky gated device, the p-NiO electrode can suppress the gate leakage and shift the threshold voltage positively. Pulse-mode and temperature-dependent current-voltage measurements demonstrate that both kinds of devices present good stability. The frequency-dependent conductance measurement confirms that only fast trap is detected for the TiN gated device while both fast and slow traps for the NiO gated one. The slow trap is ascribed to the hole trapping in the type-II staggered band configuration between NiO and AlGaN/GaN, which is also confirmed from the obvious threshold voltage instability in high frequency loop scan curves.
关键词： p-NiO,Hole trapping,Reliability,Transparent gate
更新于2025-09-23 15:22:29
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[IEEE 2018 International Wafer Level Packaging Conference (IWLPC) - San Jose, CA, USA (2018.10.23-2018.10.25)] 2018 International Wafer Level Packaging Conference (IWLPC) - Board Level Reliability Study of Next Generation Large Die Wafer Level Chip Scale Package Structures
摘要： Wafer Level Chip Scale Package (WLCSP) technologies are being used more often in electronic components due to their smaller size and lower cost, and are being applied to larger die and ball matrix sizes. Originally implemented mainly in mobile devices (i.e., smartphones), WLCSP components are now frequently used in new product categories that have more stringent use conditions than the mobile space. The harsher use conditions raise a concern of solder joint reliability, especially in temperature cycling due to the difference in the coefficient of thermal expansion between the silicon die and the laminate motherboard. While cycle life can be extended by using underfill, underfilling makes the surface mount assembly process more complex and costly, increases cycle time and inhibits rework. To solve the challenge of extending cyclic life without underfill, new WLCSP structures and materials have been proposed. This paper describes the investigation of some of these innovative solutions through motherboard assembly and board level reliability testing. The package variables consisted of two WLCSP structures utilizing ball support mechanisms and a Bismuth (Bi) bearing solder ball that is expected to increase fatigue life. Packages were produced separately with each variable, along with legs that included both new packages and new alloy. The finished assemblies, along with a control leg of standard structure/solder, were subjected to drop testing and temperature cycling. Solder joint integrity was monitored in-situ to accurately identify duration to failure for Weibull analysis. The results clearly show that this new generation of WLCSP structures can offer dramatically improved fatigue life without a significant sacrifice in drop reliability. This benefit should allow the use of WLCSPs in more challenging environments, as well as providing designers the option of using larger package sizes in existing mobile designs.
关键词： drop test,SACQ,board level reliability (BLR),temperature cycling,Wafer Level Chip Scale Package (WLCSP),SAC
更新于2025-09-23 15:22:29
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Universal Testing Apparatus Implementing Various Repetitive Mechanical Deformations to Evaluate the Reliability of Flexible Electronic Devices
摘要： A requirement of flexible electronic devices is that they maintain their electrical performance during and after repetitive mechanical deformation. Accordingly, in this study, a universal test apparatus is developed for in-situ electrical conductivity measurements for flexible electrodes that are capable of applying various mechanical deformations such as bending, twisting, shearing, sliding, stretching, and complex modes consisting of two simultaneous deformations. A novel method of deforming the specimen in an arc to induce uniform bending stress in single and alternating directions is also proposed with a mathematically derived control method. As an example of the arc bending method, the changes in the resistance of the printed radio frequency identification (RFID) tag antennas were measured by applying repetitive inner bending, outer bending, and alternating inner-outer bending. After 5000 cycles, the increases in resistance of the specimens that were subjected to inner or outer bending only were under 30%; however, specimens that were subjected to alternating inner-outer bending showed an increase of 135% in resistance. It is critical that the reliability of flexible electronic devices under various mechanical deformations be determined before they can be commercialized. The proposed testing apparatus can readily provide various deformations that will be useful to inform the design of device shapes and structures to accommodate deformations during use.
关键词： mechanical deformation,printed electronics,reliability,test apparatus,flexible electronics
更新于2025-09-23 15:22:29