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oe1(光电查) - 科学论文

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  • High-Performance Germanium Waveguide Photodetectors on Silicon

    摘要： Germanium waveguide photodetectors with 4 ??m widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth. The dependence of the germanium layer length on the responsivity and bandwidth of the photodetectors is studied. The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8 ??m. For the 4 × 8 ??m2 photodetector, the dark current density is as low as 5 mA/cm2 at ?1 V. At a bias of ?1 V, the 1550 nm optical responsivity is as high as 0.82 A/W. Bandwidth as high as 29 GHz is obtained at ?4 V. Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.

    关键词： responsivity,Germanium waveguide photodetectors,silicon-on-insulator substrates,selective epitaxial growth,bandwidth

    更新于2025-09-23 15:19:57

  • Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an <i>In Situ</i> Bake in a Metal-Organic Chemical Vapor Deposition Reactor

    摘要： We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).

    关键词： V-Grooved Si,Selective Epitaxial Growth,MOCVD,GaAs

    更新于2025-09-11 14:15:04