- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Linear and Nonlinear Optical Properties of Few-Layer Exfoliated SnSe Nanosheets
摘要： Monochalcogenides of group IV elements have been considered as phosphorene analogs due to their similar crystal and electronic structure. Here, few-layer SnSe nanosheets are synthesized by a sonication-assisted liquid phase exfoliation process and their linear and nonlinear optical properties are examined. The as-exfoliated few-layer (FL) SnSe demonstrates layer thickness from 2 to 10 nm and lateral size of 150 nm with high crystallinity. Optical measurement confirms the layer-number dependent bandgap, which is also corroborated by first-principle calculation. In addition, the FL SnSe shows a transition from saturable absorption to reverse saturable absorption with the increase of pumping power, and the nonlinear absorption is characterized by an ultrafast response time of picosecond scale. The nonlinear optical response in FL SnSe could be explained by defect-involved recombination of photogenerated carriers as well as the Auger scattering process, which is further enhanced by structural two-dimensionality.
关键词： nonlinear optics,phosphorene analogue,SnSe,liquid-phase exfoliation,2D semiconductors
更新于2025-09-23 15:23:52
-
Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry
摘要： Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.
关键词： cylindrical geometry,compound semiconductors,energy resolution,charge carriers trapping,charge induction
更新于2025-09-23 15:23:52
-
A New A-D-A’-D-A Conjugated Molecule Entailing Diazapentalene Unit for n-Type Organic Semiconductor
摘要： Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n-type organic semiconductors. In this paper, we report a new A-D-A’-D-A conjugated molecule (DAPDCV) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n-type semiconducting behaviour with electron mobility up to 0.16 cm2·V-1·s-1 after thermal annealing under N2 atmosphere. Moreover, thin film of DAPDCV also shows stable n-type transporting property in air with mobility reaching 0.078 cm2·V-1·s-1.
关键词： organic field-effect transistors,dicyanovinylene groups,n-type semiconductors,diazapentalene
更新于2025-09-23 15:23:52
-
Effect of exciton diffusion on the triplet-triplet annihilation rate in organic semiconductor host-guest systems
摘要： We study the contribution of triplet exciton diffusion to the efficiency loss resulting from F?rster-type triplet-triplet annihilation (TTA) in organic phosphorescent semiconductor host-guest systems, using kinetic Monte Carlo (KMC) simulations. Our study focusses on diffusion due to F?rster-type guest-guest transfer, but includes also a comparison with simulation results for the case of Dexter-type guest-guest transfer. The simulations are carried out for a wide range of F?rster radii, and for guest concentrations up to 100 mol%, with the purpose to support analyses of time-resolved photoluminescence experiments probing TTA. We find that the relative contribution of diffusion to the TTA-induced efficiency loss may be deduced quite accurately from a quantitative experimental measure for the shape of the time-dependent photoluminescence intensity, the so-called r ratio. For small guest concentrations and F?rster radii that are most relevant to organic light-emitting diodes (OLEDs), the diffusion contribution is in general quite small. Under these weak-diffusion conditions, the absolute diffusion contribution to the TTA-induced efficiency loss can be understood quantitatively using a capture radius formalism. The effective guest-guest diffusion coefficient that follows from the TTA simulations, using the capture radius formalism, agrees well with the diffusion coefficient that follows from direct KMC diffusion simulations. The simulations reveal that the diffusion coefficient is strongly affected by the randomness of the distribution of guest molecule locations.
关键词： OLEDs,photoluminescence,kinetic Monte Carlo simulations,Dexter transfer,organic semiconductors,triplet-triplet annihilation,exciton diffusion,host-guest systems,F?rster transfer
更新于2025-09-23 15:23:52
-
Enhanced optoelectronic performance of plasma electrolytic oxidized monocrystalline silicon using rGO incorporation
摘要： rGO/SiO2 composite coating was successfully prepared by plasma electrolyte oxidation (PEO) process on monocrystalline silicon (mc-Si) substrate. Investigating the effect of rGO incorporation into the SiO2 coating revealed that the addition of rGO leads to a significant increase in the photo-trapping ability due to the high specific surface area and excellent electron transfer efficiency. The PL intensity of the composite sample was found to decrease, which signified the suspension of the electron-hole pairs’ recombination. As a result, the photocurrent gain of the composite coating enhanced about 5.5 times. Likewise, the time-response switching featured an over two-fold increase for the rGO/SiO2 coating, impressively.
关键词： Semiconductors,Plasma electrolyte oxidation,Optoelectrical properties,Composite materials,rGO/SiO2 composite
更新于2025-09-23 15:23:52
-
First principles study of electronic structures of Cd0.9375Co0.0625X (X?=?S, Se, Te) for magnetic, optical and thermoelectric device applications
摘要： The present article investigates the structural and electronic properties of Co doped (xCo = 6.25%) CdS/Se/Te diluted magnetic semiconductors to understand the optical and thermoelectric characteristics. The electronic properties, computed by applying generalized gradient approximation (GGA) and then modified Becke Johnson (mBJ) functional, are contrasted to identify the appropriate electronic parameters. The stable ferromagnetic states have been justified to arise due to the p-d hybridization that has been found responsible in inducing magnetic moments at the interstitial and at the non-magnetic sites. The computed direct band gap and the exchange constants (N0α and N0β) have suggested, respectively, the potential optical and spintronic device applications. The studied compounds operate within visible-ultraviolet energy range. The thermoelectric response improves with temperature, while deteriorated due to Co doping. The studied compounds exhibiting various significant physical properties evidence the potential consumption in various technologically important spintronic, optoelectronic and thermoelectric devices.
关键词： Optical properties,Ferromagnetism,Diluted magnetic semiconductors,Thermoelectric properties,mBJ potential
更新于2025-09-23 15:23:52
-
Nitrogen-embedded small-molecule semiconducting materials: Effect of chlorine atoms on their electrochemical, self-assembly, and carrier transport properties
摘要： We reported three novel nitrogen-embedded small molecules 4a, 4b, and 4c, which were synthesized from the condensation reactions of benzo[1,2-b:4,5-b']difuran-2,6(3H,7H)-dione with 1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, 6-chloro-1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, or 4,6-dichloro-1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, respectively. Their optical, electrochemical properties, self-assembly behavior, and carrier transport properties were studied by a range of experimental and theoretical methods, and the effect of chlorine atoms were well discussed. Energy levels of the highest occupied molecular orbitals and the lowest unoccupied ones for these molecular materials locate at ?5.92～?6.02 and ?4.25～?4.37 eV, respectively. Bottom gate/bottom contact field-effect transistors based on 4a, 4b, and 4c exhibited n-channel transport characteristics with the highest electron mobility of 7.57 × 10?3 cm2 V?1 s?1. Thin film microstructure investigations revealed 4a and 4c perform lamellar molecular packing with random orientations to the OTS-treated SiO2 substrate, while 4b conducts a highly crystalline, edge-on, lamellar packing though large grain boundaries exist in its thin film.
关键词： Isoindigo derivatives,Chlorine atoms,Small-molecule semiconductors,Electron mobilities,Organic field-effect transistors
更新于2025-09-23 15:23:52
-
Heat-Assisted Photoacidic Oxidation Method for Tailoring the Surface Chemistry of Polymer Dielectrics for Low-Power Organic Soft Electronics
摘要： The use in low-power soft electronics of the appropriate insulating polymer materials with a high dielectric constant (k) is considered a practical alternative to that of inorganic dielectric materials, which are brittle and have high processing temperatures. However, the polar surfaces of typical high-k polymer insulators are problematic. Further, it is a huge challenge to control their surface properties without damage because of their soft and chemically fragile nature. Here, a heat-assisted photoacidic oxidation method that can be used to effectively oxidize the outermost surfaces of high-k rubbery polymer films without degradation is presented. The oxidized surfaces prepared with the developed method contain large numbers of hydroxyl groups that enable the subsequent growth of dense and ordered self-assembled monolayers (SAMs) consisting of organosilanes. The whole process modifies the surface characteristics of polymer dielectrics effectively. The mechanisms of the oxidation of polymer surfaces and the subsequent SAM growth process are investigated. The resulting surface-tailored rubbery dielectrics exhibit superior electrical characteristics when used in organic transistors. These results demonstrate that this method can be used to realize practical soft organic electronics based on high-k polymer dielectrics.
关键词： self-assembled monolayers,organic semiconductors,polymer gate dielectric,polymer oxidation,surface chemistry
更新于2025-09-23 15:23:52
-
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
摘要： The main results of a complete study by Transmission and Scanning-Transmission Electron Microscopies ((S)TEM) are described for (i) InGaN/Si (111) heterostructures in the whole compositional range of the alloys, and (ii) InN quantum dots (InN QDs) directly grown on Si wafers or on relatively rough InGaN/Si (111) templates. The combination of many (S)TEM-based techniques allowed to evaluate different characteristics of the systems under study: (InN QD/) InGaN/Si and InN QD/Si interfaces and crystal qualities, structural and chemical imperfections and other important features. InxGa1-xN thin films are often identified as single-crystalline, very homogeneous in composition, and mostly wurtzite-type, remarkably at any value of x. Also, (S)TEM techniques revealed that the InN nanostructures were hexagonal single crystals, mostly epitaxial to the supporting lattice. The InN crystals also exhibited partially cubic arrangements when allocated onto In-rich InxGa1-xN (i.e. x > 0.7).
关键词： Semiconductors,TEM,Heterojunctions,Crystal structure.,Nitride materials,Crystal growth,Transmission Electron Microscopy
更新于2025-09-23 15:23:52
-
Au as a cocatalyst loaded on solid solution Bi0.5Y0.5VO4 for enhancing photocatalytic CO2 reduction activity
摘要： Au as a cocatalyst was deposited on the surface of solid solution Bi0.5Y0.5VO4 by a photodeposition method for photocatalytic reduction of CO2. Au particles loaded on the surface of Bi0.5Y0.5VO4 apparently enhanced the photocatalytic activity of CO2 reduction toward CO evolution. The highest rate of CO evolution was obtained over 1.0 wt% Au/Bi0.5Y0.5VO4, reaching 3.5 times of that of bare Bi0.5Y0.5VO4. The improved photocatalytic performance was assigned to the lower overpotential of Au/Bi0.5Y0.5VO4 for CO evolution than that of bare Bi0.5Y0.5VO4 as well as the formation of Schottky barrier, which promotes the separation of photogenerated electron–hole pairs.
关键词： Semiconductors,Au cocatalyst,Nanocomposites,CO2 reduction,Charge separation
更新于2025-09-23 15:23:52