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oe1(光电查) - 科学论文

286 条数据
?? 中文(中国)
  • WS2 nanodots-modified TiO2 nanotubes to enhance visible-light photocatalytic activity

    摘要: WS2 nanodots-modified TiO2 nanotubes (TNT/WND) composites were fabricated via one-pot hydrothermal method for the first time. The physical and photophysical properties of the as-prepared photocatalysts were characterized by XRD, TEM, HRTEM, BET, UV-vis, and PL. The results demonstrated that WS2 nanodots have been successfully anchored on the inner wall of TiO2 nanotubes. TNT/WND composites showed excellent photocatalytic activity toward photodegradation of rhodamine B (RhB) under visible-light, which mainly attributed to the synergistic effect from relative low recombination rate of the photogenerated electron-hole pairs and high specific surface area.

    关键词: Semiconductors,Photocatalysis,WS2 nanodots,Structural,TiO2 nanotubes,Nanocomposites

    更新于2025-09-04 15:30:14

  • Facile photodeposition synthesis of novel Ag/4-Br/Bi2O3 composite photocatalyst

    摘要: A novel Ag/4-Br/Bi2O3 composite photocatalyst was prepared by the hydrothermal and photodeposition method, and characterized by XRD, SEM, TEM and UV–vis analysis, respectively. The results indicated that the nanoparticles of Ag were successfully deposited on the surface of 4-Br/Bi2O3 composite. The as-prepared sample of Ag/4-Br/Bi2O3 showed higher photocatalytic activity than that of pure Bi2O3 or 4-Br/Bi2O3 through photodegradation of methyl orange(MO) under visible light. The enhanced photocatalytic activity could be attributed to the expansion of photoresponse range and the acceleration of carriers transmit caused by loading of Ag nanoparticles. Additionally, a possible photocatalytic mechanism of the Ag/4-Br/Bi2O3 composite was put forward.

    关键词: Semiconductors,Ag/4-Br/Bi2O3,Photocatalyst,Composite materials

    更新于2025-09-04 15:30:14

  • Quantitative mobility evaluation of organic semiconductors using quantum dynamics based on density functional theory

    摘要: We present an order-N methodology to evaluate mobilities of charge carriers coupled with molecular vibrations using quantum dynamics based on first-principles calculations that can be applied to micron-scale soft materials. As a demonstration, we apply it to several organic semiconductors and show that the calculated intrinsic hole mobilities and their temperature dependences are quantitatively in good agreement with those obtained in experiments. We also clarified which vibrational modes dominate the transport properties. The methodology paves the way for quantitative prediction of the transport properties of various soft materials.

    关键词: quantum dynamics,density functional theory,charge-carrier mobility,organic semiconductors,molecular vibrations

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements

    摘要: This paper discusses the measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in order to implement simulation models with an improved mapping of the drain-source voltage vds and drain current id during the switching operation. Based on the gate charge characteristic measured at an inductive load condition using different drain current values and temperature settings, the gate current is allocated to the charging of the gate-drain capacitance Cgd and the gate-source capacitance Cgs. With this approach the capacitance characteristics Cgs(vgs) and Cgd(vgd) are determined in the full operating range of the gate-source voltage vgs and gate-drain voltage vgd.

    关键词: wide-bandgap semiconductors,Inter-electrode capacitances,dynamic measurements,cgs,capacitance-voltage characteristics,cgd

    更新于2025-09-04 15:30:14

  • [IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film

    摘要: In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The Al/IGZO/Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.

    关键词: memristor characteristic,IGZO,amorphous oxide semiconductors,Al

    更新于2025-09-04 15:30:14

  • Machine Learning-Based Charge Transport Computation for Pentacene

    摘要: Insight into the relation between morphology and transport properties of organic semiconductors can be gained using multiscale simulations. Since computing electronic properties, such as the intermolecular transfer integral, using quantum chemical (QC) methods requires a high computational cost, existing models assume several approximations. A machine learning (ML)–based multiscale approach is presented that allows to simulate charge transport in organic semiconductors considering the static disorder within disordered crystals. By mapping ?ngerprints of dimers to their respective transfer integral, a kernel ridge regression ML algorithm for the prediction of charge transfer integrals is trained and evaluated. Since QC calculations of the electronic structure must be performed only once, the use of ML reduces the computation time radically, while maintaining the prediction error small. Transfer integrals predicted by ML are utilized for the computation of charge carrier mobilities using o?-lattice kinetic Monte Carlo (kMC) simulations. Bene?ting from the rapid performance of ML, microscopic processes can be described accurately without the need for phenomenological approximations. The multiscale system is tested with the well-known molecular semiconductor pentacene. The presented methodology allows reproducing the experimentally observed anisotropy of the mobility and enables a fast estimation of the impact of disorder.

    关键词: machine learning,multiscale approach,organic semiconductors,charge transport,pentacene

    更新于2025-09-04 15:30:14