- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Improved Surface Passivation by Wet Texturing, Ozone‐Based Cleaning, and Plasma‐Enhanced Chemical Vapor Deposition Processes for High‐Efficiency Silicon Heterojunction Solar Cells
摘要： This paper reports on the development of wet chemical processes varying the texturing and cleaning of the silicon surfaces, reducing process time and the amount of chemicals to obtain the same cleaning quality. Additionally, two different amorphous silicon (a-Si:H) passivation stacks are discussed in this paper demonstrating an improvement of the open circuit voltage, Voc, by 15 mV. Implementing these wet chemistry improvements combined with optimized process conditions for the passivating a-Si:H layers deposited by plasma enhanced chemical vapor deposition (PECVD), allowed us to obtain high efficiency devices both in small and full-area solar cells. On 6-inch full-area solar cells (215.3 cm2 aperture area) open circuit voltages, fill factors and efficiency values of 738 mV, 81.4% and 23.2% were obtained, respectively; for 4 cm2 cell size the best obtained values in equivalent solar cells were 741 mV, 80.6% and 23.2%.
关键词： silicon heterojunction solar cells,texturing,ozone cleaning,surface passivation
更新于2025-09-12 10:27:22
-
AIP Conference Proceedings [AIP Publishing INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Perak, Malaysia (23–26 April 2019)] INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Advanced metallization with low silver consumption for silicon heterojunction solar cells
摘要： In this work, three industry-related metallization approaches for silicon heterojunction (SHJ) solar cells are presented which are aiming for a reduction of silver consumption compared to conventional screen-printing of low-temperature silver pastes. The presented results are achieved on large-area cells (area of 244.3 cm2). Firstly, the cell results reveal that with silver-coated copper pastes for screen-printing comparable results as with pure silver pastes can be achieved but with a potentially reduced silver consumption of 30%. Median efficiencies of 21.6% are achieved in both cases utilizing a five busbar cell design. A second approach to reduce the silver consumption is the use of inkjet-printing. The influence of the inkjet-printed layer number per contact finger on the cell performance of busbarless cells is investigated. A maximum conversion efficiency of 23.3% of an inkjet-printed solar cell is achieved within this study. Thirdly, a novel printing technology established at Fraunhofer ISE, called FlexTrail-printing, is introduced. By utilizing the same Ag nanoparticle ink like in the case of inkjet-printing, the finger width is reduced from 75 ± 1 μm down to 16 ± 1 μm on alkaline textured SHJ solar cells. To the authors’ knowledge, this is the smallest feature size ever published on ITO-coated, textured silicon surfaces. A maximum conversion efficiency of 23.7% is measured (busbarless cell). Only 0.3 ± 0.1 mg Ag nanoparticle ink is consumed during FlexTrail-printing on a large-area wafer with a front grid of 80 fingers.
关键词： metallization,silicon heterojunction solar cells,FlexTrail-printing,silver consumption,screen-printing,inkjet-printing
更新于2025-09-12 10:27:22
-
AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - P-type SiOx front emitters for Si heterojunction solar cells
摘要： We have applied p-type nanocrystalline silicon-oxide (p-SiOx) as front emitter in silicon heterojunction solar cells. The evolution of structural, optical, and electrical properties of p-SiOx as a function of the carbon-dioxide/silane flow rate ratio used in the gas mixture has been investigated, comparing also the film characteristics with those of p-type amorphous and nanocrystalline silicon thin films often used in the cells. Selected p-SiOx films with suitable electrical properties have been inserted in silicon heterojunction solar cells based on n-type FZ c-Si <100> wafers, passivated with ultrathin intrinsic a-Si:H buffers. Improvement of all the photovoltaic parameters has been observed with the emitter with higher oxygen content. The results have been correlated with the increased transparency and enhanced field-effect passivation obtained thanks to the presence of sufficient carbon dioxide in the gas mixture for the p-SiOx layer growth.
关键词： field-effect passivation,silicon heterojunction solar cells,p-type nanocrystalline silicon-oxide,optical and electrical properties,carbon-dioxide/silane flow rate ratio
更新于2025-09-11 14:15:04
-
AIP Conference Proceedings [AIP Publishing INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Perak, Malaysia (23–26 April 2019)] INTERNATIONAL SYMPOSIUM ON GREEN AND SUSTAINABLE TECHNOLOGY (ISGST2019) - Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells
摘要： The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating without any resist-mask is in development. A thin multi-functional PVD Cu-Al stack is deposited to mask the ITO and to promote homogeneous current distribution for simultaneous bifacial plating. This investigation reviews different approaches to perform the Al-patterning – by printing of a metallic ink, laser metal transfer or selective metal etching – to produce a metal-seed susceptible to plate selectively against the self-passivated Al surface. This NOBLE – native oxide barrier layer for selective electroplated, metallization allows reaching a first promising efficiency of 20.0% on a full area SHJ solar cell with low contact resistivity to ITO. This simultaneous bifacial metallization features several advantages: low temperature processing, high metal conductivity of plated copper, no organic masking and low material costs (almost Ag-free).
关键词： bifacial plating,silicon heterojunction solar cells,resist-free,metallization,PVD Cu-Al stack,Cu electroplating
更新于2025-09-11 14:15:04
-
[IEEE 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Kyoto, Japan (2019.7.2-2019.7.5)] 2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) - Influence of molybdenum oxide thickness, electronic structure, and work function on the performance of hole selective silicon heterojunction solar cells
摘要： Ultra-thin MoOx is capable of exhibiting high work function (< 6 eV), large band gaps (< 3 eV) are benefiting for surface passivation and hole selectivity layer in silicon solar cells instead of the doped layers due to high parasitic absorption. Importantly, MoOx electronic structure by oxygen dilution during the evaporation have influence to the MoOx work function and hence reduce hole injection. XPS study confirmed the electronic structure and chemical composition of the evaporated and annealed (Ar and O2 atmosphere) MoOx sample. TEM showed a clear interface contact between the ITO/MoOx/a-SiH(i) layers and no diffusion between the layers after annealed at 140 oC. Fabricated 10 nm thick MoOx/n-Si solar cells archived an efficiency of 20.04%, FF of 73.79 % and Jsc of 38.40 mA/cm2. A sever degradation in FF and Jsc was noticed by increasing the MoOx thickness due to diffusion of layers and high parasitic absorption of MoOx.
关键词： work function,silicon heterojunction solar cells,thickness,MoOx,electronic structure
更新于2025-09-11 14:15:04