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Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells
摘要： Silicon heterojunction (SHJ) solar cells hold the power conversion efficiency (PCE) record among crystalline solar cells. However, amorphous silicon is a typical high-entropy metastable material. Damp-heat aging experiments unveil that the amorphous/crystalline silicon interface is susceptible to moisture, which is potentially the biggest stumbling block for mass production. By capping SiNx and SiOx dielectrics, the absolute PCE degradation is predicted to be only (cid:1)0.6% after a 30-year installation. This demonstrates the SHJ solar cell is a highly promising candidate for next-generation photovoltaics.
关键词： High efficiency,Amorphous silicon,Mass production,Damp-heat stability,Silicon heterojunction solar cells
更新于2025-09-23 15:21:01
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Front contact optimization for rear-junction SHJ solar cells with ultra-thin n-type nanocrystalline silicon oxide
摘要： In this work, ultra-thin n-type hydrogenated nanocrystalline silicon oxide [(nc-SiOx:H (n)] film was used to replace amorphous silicon [a-Si:H (n)] as electron transport layer (ETL) in rear-junction silicon heterojunction (SHJ) solar cell to reduce front parasitic absorption. The contact resistivity between the transparent conductive oxide (TCO) and ultra-thin ETL interface plays an important role on the cell performance. A nanocrystalline silicon (nc-Si:H) contact or seed layer was introduced in the solar cell with ultra-thin nc-SiOx:H and the impact of the nc-Si:H thickness on the cell performance was investigated. To demonstrate scalability, bifacial solar cells with 10 nm ETL were fabricated on the M2 (244 cm2) wafer. The best cell performance is obtained by the solar cell with 5 nm nc-SiOx:H (n) and 5 nm nc-Si:H (n) contact layer and it exhibits open-circuit voltage (Voc) of 738 mV, fill factor (FF) of 80.4%, short-circuit current density (Jsc) of 39.0 mA/cm2 and power conversion efficiency (η) of 23.1% on M2 wafer. Compared to the one with nc-SiOx:H (n), an increase of 3%abs of FF and 0.5%abs of η and lower front contact resistivity is demonstrated for the solar cells with nc-Si:H (n) / nc-SiOx:H (n) double layer, which is caused by the lower energy barrier for electrons, according to the band diagram calculated by the AFORS-HET simulator. A simulation on the solar cell optical and electrical losses was done by the Quokka 3 simulator and shows much lower electrical transport loss and a bit higher front surface transmission loss for the one with double layer than nc-SiOx:H (n) single layer.
关键词： Loss analysis,Nanocrystalline silicon oxide,Silicon heterojunction solar cells,Electron transport layer
更新于2025-09-23 15:19:57
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Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells
摘要： Herein, the effectiveness of post-deposition catalytic-doping (cat-doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc-Si:H), nanocrystalline silicon oxide (nc-SiOx:H), and microcrystalline silicon carbide (μc-SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) pro?les by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy ?lms. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat-doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is con?rmed by using different gases during the cat-doping process.
关键词： silicon alloy,post-depositions,silicon heterojunction solar cells,hot-wire chemical vapor depositions,catalytic chemical vapor deposition
更新于2025-09-19 17:13:59
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Recent Developments in Photovoltaic Materials and Devices || Conductive Copper Paste for Crystalline Silicon Solar Cells
摘要： In photovoltaic industries, the main technique of metallization is screen printing with silver pastes due to its simple and quick process. However, the expensive price of silver paste is one of the barriers to the production of low-cost solar cells. Therefore, the most focused target in photovoltaic research is the decreasing consumption of silver paste or substitute silver for other materials. As a proper candidate, copper has been researched by many institutes and companies since it has a similar conductivity with silver even though the price is inexpensive. To apply copper as a contact for solar cells, the plating technique has been actively researched. However, copper paste, which was mainly developed for integrated circuit applications, has been recently researched. Mostly, copper paste was developed for the low-temperature annealing process since copper tends to oxidize easily. On the other hand, firing type copper paste was also developed by coating copper particles with a barrier layer. This chapter discusses recent development of copper paste for the application of solar cells and its appropriate annealing conditions for better electrical properties. Also, the light I-V characteristics of copper paste on the solar cells in other research papers are summarized as well.
关键词： silicon heterojunction solar cells,curing,oxidation barrier coating,copper paste,passivated busbar
更新于2025-09-19 17:13:59
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Bifacial silicon heterojunction solar cells with advanced Ag-free multi-wire metallization attached to ITO layers using new transparent conductive PAEK copolymers
摘要： Previously, we reported the synthesis and application of transparent conductive polymer (TCP) films, poly(arylene ether ketone) copolymers (co-PAEKs), for forming direct contact between wires and transparent conductive oxide (TCO) layers in silicon solar cells. The polymers have the lowest peak strain temperature (Td), which determines the contact formation temperature, of 205 °C. To utilize such TCP films in silicon heterojunction (SHJ) solar cells with amorphous silicon layers, Td should be lowered. To solve the problem in question, a number of co-PAEKs with a decreased reduced viscosity (ηred) due to a decreased molecular weight of the polymer have been synthesized in this study. It has been shown that lowering ηred from 0.56 to 0.4 dl/g markedly improves the main properties of the co-PAEKs. In particular, (i) Td decreased from 205 to 189 °C, (ii) the peel strength, determined by pulling off the wires from the polymer surface, increased from 1.69 ± 0.26 to 3.55 ± 0.84 N/mm, and (iii) the resistivity of the wire/TCP/ITO (In2O3:Sn) contact, ρC, dropped from 1.20 to 0.67 mΩ cm2. At the same time, the optical properties of the copolymers remained unchanged. We have fabricated bifacial rear junction SHJ solar cells based on a ITO/(n)α-Si:H/(i)α-Si:H/(n)Cz-Si/(i)α-Si:H/(p)α-Si:H/ITO structure, with wire contact grids attached to the ITO layers using co-PAEK films. A solar cell produced using the co-PAEK film with the lowest reduced viscosity had an efficiency under front/rear illumination of 19.6%/18.4%. At 1-sun front illumination and 20/50% of 1-sun rear illumination, the equivalent efficiency is equal to 23.3%/28.8%.
关键词： Multi-wire metallization,Transparent conductive polymer,Silicon heterojunction solar cells
更新于2025-09-19 17:13:59
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Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells
摘要： Silicon heterojunction solar cells achieve high conversion efficiency due to the excellent surface passivation provided by the hydrogenated intrinsic amorphous silicon films. However, they require a high-quality wafer as a starting material because their low-temperature processing does not allow for gettering. Czochralski-grown upgraded metallurgical-grade (UMG-Cz) silicon is a low-cost alternative to electronic-grade silicon for silicon solar cells, but is often limited in lifetime by grown-in defects. We have previously shown that pre-fabrication treatments, namely tabula rasa, phosphorus diffusion gettering, and hydrogenation, can significantly improve the bulk quality of UMG-Cz wafers. These help to mitigate the impact of grown-in oxygen precipitate nuclei and metallic impurities. In this work, we fabricate rear-junction silicon heterojunction solar cells on both as-grown and pre-treated UMG-Cz and electronic-grade wafers. We show that pre-fabrication treatments have a marked impact on solar cell efficiencies. With pre-fabrication treatment, the efficiency improves from 18.0% to 21.2% for the UMG-Cz cells and 21.2%–22.7% for the electronic-grade cells. Comparison of the open-circuit voltages of the as-grown and pre-treated UMG-Cz and electronic-grade cells using Quokka simulations reveals that the bulk lifetime remains the primary limiting factor for the UMG-Cz wafers.
关键词： Hydrogenation,Phosphorus diffusion gettering,Czochralski silicon,Solar-grade silicon,Tabula rasa,Silicon heterojunction solar cells
更新于2025-09-16 10:30:52
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Through Concentration Profiling of Heterojunction Solar Cells
摘要： Electrochemical capacitance–voltage profiling has been used to examine heterojunction solar cells based on single-crystal silicon. Specific features of the electrochemical capacitance–voltage profiling of modern multilayer heterojunction solar cells have been analyzed. The distribution profiles of majority carriers across the whole thickness of the samples were obtained, including, for the first time, those in layers of conducting indium tin oxide.
关键词： electrochemical capacitance–voltage profiling,single-crystal silicon,amorphous silicon,heterojunction solar cells
更新于2025-09-16 10:30:52
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Optimization of SnO2-based electron-selective contacts for Si/PEDOT:PSS heterojunction solar cells
摘要： Tin oxide (SnO2) is a potentially excellent electron-selective contact (ESC) for silicon (Si)-based solar cells due to its satisfactory energy band structure and good crystallinity. However, unsatisfactory electron extraction ability and limited surface passivating effect of SnO2 ESCs will limit the performance of corresponding solar cells. We increase the Fermi level of SnO2 by doping Ethylene diamine tetraacetic acid (EDTA), which endows EDTA-SnO2 better electron extraction ability than SnO2. Moreover, EDTA-SnO2/SiOx bilayer ESC prepared by combining a EDTA-SnO2 layer and a thin silicon oxide (SiOx) film provides better surface passivation than EDTA-SnO2 ESC without impairing the charge transport capability markedly. The planar Si/PEDOT:PSS heterojunction solar cells (HSCs) with EDTA-SnO2/SiOx bilayer ESCs exhibit a power conversion efficiency (η) of 11.52%, which improves 13.7% in comparison with the η (10.13%) of HSCs with SnO2 ESCs, mainly caused by the increase in Voc and FF by 18 mV and 5.4% respectively.
关键词： Tin oxide,Electron-selective contact,Surface passivation,Silicon heterojunction solar cells,Fermi level
更新于2025-09-16 10:30:52
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Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers
摘要： The photoluminescence of two types of heterostructural silicon solar cells with di?erent passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion e?ciency is established. An e?ective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.
关键词： amorphous silicon/crystalline silicon heterojunction,solar cells,photoluminescence of solar cells
更新于2025-09-12 10:27:22
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Chemical Texturization Processes for Non-conventional Silicon Substrates for Silicon Heterojunction Solar Cell Applications
摘要： The present work addresses the exhaustive study of the surfaces of multicrystalline silicon wafers after being subjected to a texturization process for silicon heterojunction solar cell applications. The investigations described include the effect that the time of isotropic etching based on combinations of hydrofluoric and nitric acids has on the reflectance, the morphology of the surfaces and the surface recombination through the evolution of the implicit open-circuit voltage. The influence of previous treatments and the elimination of porous silicon or silicon oxide formed on wafer surfaces as a consequence of these texturization processes are also addressed. Textured multicrystalline silicon wafer surfaces with a good uniformity and low weighted hemispherical reflectances (23–24%) have been achieved with short etching times. These texturization processes have also been tested on upgraded metallurgical silicon wafers, resulting in weighted hemispherical reflectance values around 23%, but at the cost of the appearance of important surface defects.
关键词： Multicrystalline silicon,Reflectance,Chemical texturization,Surface morphology,Silicon heterojunction solar cells,UMG silicon
更新于2025-09-12 10:27:22