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[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Influence of the Compositional Variation of Zn <sub/>x</sub> Cd <sub/>1a??x</sub> S (0 a?¤ x a?¤ 0.45) Buffer on Efficiency of Cu <sub/>2</sub> ZnSnSe <sub/>4</sub> Solar Cell: A Simulation
摘要： This paper investigates the manufacturability-aware process of p-n junction formation for photovoltaic cells involving with Si nanoparticle layer. The furnace-based dopant diffusion process of forming a p-n junction consumes a substantial amount of energy. In addition, repetitive production steps prevent the possibility of Si ink-based cells integrating onto ?exible substrates. This research examined the local heating dopant diffusion process by using a ?ber laser at a wavelength of 1064 nm. The infrared beam is delivered onto the wafer stack with a nanoparticle carbon layer and n-type Si ink layer on p-type Si substrates. The nanoparticle carbon ?lm absorbs infrared beam energy and converts photon energy as a thermal source to diffuse the n-type dopant in Si ink into the p-type Si wafer. The Si ink in this paper contains a mixture of Si nanoparticles and an n-type spin-on dopant solution. The TEM results show that Si nanoparticles are uniformly dispersed on the Si wafer surface. This research investigated sheet resistance as a function of laser parameters, including laser power, scanning speed, and pulse frequency for the samples coated with Si ink. Secondary ion mass spectroscopy measurements indicate the presence of an n-type dopant in p-type substrates, with an approximate diffusion depth of 100 nm. The results indicate that the proposed infrared laser treatment technique is promising for the formation of p-n junctions with Si ink-based photovoltaic cells.
关键词： silicon ink,spin-on dopant (SOD),silicon nanoparticle,carbon nanoparticle,?ber laser,Flexible photovoltaic cell,pn junction
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - In Situ Transmission Electron Microscopy: A Powerful Tool for the Characterization of Carrier-Selective Contacts
摘要： This paper investigates the manufacturability-aware process of p-n junction formation for photovoltaic cells involving with Si nanoparticle layer. The furnace-based dopant diffusion process of forming a p-n junction consumes a substantial amount of energy. In addition, repetitive production steps prevent the possibility of Si ink-based cells integrating onto flexible substrates. This research examined the local heating dopant diffusion process by using a fiber laser at a wavelength of 1064 nm. The infrared beam is delivered onto the wafer stack with a nanoparticle carbon layer and n-type Si ink layer on p-type Si substrates. The nanoparticle carbon film absorbs infrared beam energy and converts photon energy as a thermal source to diffuse the n-type dopant in Si ink into the p-type Si wafer. The Si ink in this paper contains a mixture of Si nanoparticles and an n-type spin-on dopant solution. The TEM results show that Si nanoparticles are uniformly dispersed on the Si wafer surface. This research investigated sheet resistance as a function of laser parameters, including laser power, scanning speed, and pulse frequency for the samples coated with Si ink. Secondary ion mass spectroscopy measurements indicate the presence of an n-type dopant in p-type substrates, with an approximate diffusion depth of 100 nm. The results indicate that the proposed infrared laser treatment technique is promising for the formation of p-n junctions with Si ink-based photovoltaic cells.
关键词： Flexible photovoltaic cell,fiber laser,pn junction,spin-on dopant (SOD),silicon ink,carbon nanoparticle,silicon nanoparticle
更新于2025-09-19 17:13:59