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High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
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Fabrication of ?μ-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal
摘要： Owing to the constraint of carrier transport, the dark current is relatively lower in Schottky contacted devices than that in Ohmic contacted devices, leading to a high specific detectivity in photodetectors. In this work, we prepared ε-Ga2O3 thin film by using metal-organic chemical vapor deposition, then constructed a three-pair interdigital ultraviolet solar-blind photodetector with Au electrodes as Schottky contacts. Seen from the results, this photodetector displays an outstanding wavelength selectivity with responsivity of 0.52 A W-1 responding to 250 nm wavelength light. In addition, it shows a photo-to-dark current ratio of 1.82 × 104/6.03 × 102 at 5 V under 40/5 μW cm-2 254 nm light illuminations, respectively, and a low dark current of 1.87 × 10-11 A. Correspondingly, the specific detectivity is 1.67 × 1012 Jones, and the photoresponsivity is 0.198 A W-1/52.54 mA W-1. Overall, ε-Ga2O3 prepared here is certified to be an excellent candidate material to perform high-performance solar-blind detection.
关键词： ε-Ga2O3,high detectivity,Schottky contact,solar-blind photodetector
更新于2025-09-19 17:13:59
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Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets
摘要： Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5×104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26×106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.
关键词： FET,photodetector,solar-blind deep ultraviolet,quasi-2D Te nanosheets
更新于2025-09-19 17:13:59
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Tailoring the solar-blind photoresponse characteristics of ?2-Ga2O3 epitaxial films through lattice mismatch and crystal orientation
摘要： Realizing manipulation of the photoelectric properties of wide bandgap semiconductors is a main challenge for succeeding next-generation functional optoelectronics. As an intriguing wide bandgap semiconductor, β-Ga2O3 (Eg ~ 4.9 eV) is emerging as a promising candidate for photodetectors operating in solar-blind region. Here, we show that by selecting substrates with different symmetries and lattice parameters [i.e. (100) MgO, (100) MgAl2O4 and (0001) α-Al2O3], epitaxial β-Ga2O3 films with (100)- or (2?01)-oriented could be fabricated. We found that the photoresponse characteristics are strongly correlated with the lattice mismatch and film orientation. In particular, (100)-oriented β-Ga2O3 film grown on MgO substrate with smaller lattice mismatch exhibited a 254 nm responsivity of 0.1 A·W-1 and detectivity of 4.3×1012 Jones, which are approximately an order of magnitude higher than that of the (2?01)-oriented β-Ga2O3 film. Our work may provide a strategy to develop further high performance solar-blind photodetectors.
关键词： β-Ga2O3,crystal orientation,epitaxial films,lattice mismatch,solar-blind photodetectors
更新于2025-09-19 17:13:59
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Fast Response Solar-Blind Photodetector with a Quasi-Zener Tunneling Effect Based on Amorphous In-Doped Ga2O3 Thin Films
摘要： A high-performance solar-blind photodetector with a metal–semiconductor–metal structure was fabricated based on amorphous In-doped Ga2O3 thin films prepared at room temperature by radio frequency magnetron sputtering. The photodetector shows a high responsivity (18.06 A/W) at 235 nm with a fast rise time (4.9 μs) and a rapid decay time (230 μs). The detection range was broadened compared with an individual Ga2O3 photodetector because of In doping. In addition, the uneven In distribution at different areas in the film results in different resistances, which causes a quasi-Zener tunneling internal gain mechanism. The quasi-Zener tunneling internal gain mechanism has a positive impact on the fast response speed and high responsivity.
关键词： quasi-Zener tunneling effect,fast response,amorphous InGaO thin films,solar-blind photodetector
更新于2025-09-16 10:30:52
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Nanoplasmonic Enhanced High-performance Metastable Phase α-Ga2O3 Solar-blind Photodetector
摘要： In this work, nanoplasmonic enhanced α-Ga2O3 solar-blind photodetectors with interdigital structure were fabricated on sapphire. By introducing Al nanoparticles (NPs) onto the device surface, the photodetector obtained a significant increase in responsivity at solar-blind region, and the response peak located at 244 nm reached 3.36 A/W under applied voltage of 5 V. Compared with the responsivity at 320 nm, the response ratio exceeds 240, demonstrating a superior solar-blind cut-off edge. It also presents that the photocurrent was dramatically increased under the 254 nm ultraviolet irradiation for the enhanced device while the dark current remains below 1 pA at 20 V. To explicitly elucidate the enhancement effects by Al NPs under ultraviolet illumination, Kelvin probe force microscopy was employed and directly revealed the physical mechanism of surface plasmon oscillation which promoted the formation of localized electric fields on α-Ga2O3. In addition, we illustrated the effects of interdigital spacing on device performances through experimental measurements and theoretical calculations. These results not only provide direct evidences for Al nanoplasmonic enhancement on α-Ga2O3 device, but also facilitate design and fabrication of solar-blind photodetectors.
关键词： photodetector,nanoplasmonic,α-Ga2O3,solar-blind,interdigital
更新于2025-09-16 10:30:52
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Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer
摘要： In this paper, novel self-powered, solar-blind UV photodetector (PD) designs based on a ZnO thin-film with engineered back metal layer (BML) were fabricated by RF magnetron sputtering and e-beam evaporation techniques. An exhaustive study concerning the impact of dissimilar BML (Au and Ni) on the device structural, optical and electrical properties was carried out. The measured I–V curves illustrated an asymmetrical behavior, enabling a clear and distinctive photovoltaic mode. Superb sensitivity of 107, high ION/IOFF ratio of 149dB, ultralow dark-noise current less than 11pA and responsivity exceeding 0.27A/W were reached for the prepared ZnO-based UV-PDs in self-powered mode. The role of the engineered BML in promoting effective separation and transfer of the photo-induced carriers was discussed using the band-diagram theory. The influence of the annealing process on the UV-sensor performance was also investigated. The annealed device at 500°C demonstrated a lower dark current of a few picoamperes and a high rejection ratio of 2.2×103, emphasizing its exciting visible blindness characteristics. Therefore, the use of an engineered BML with optimized annealing conditions open up new perspectives to realizing high-performance, self-powered solar-blind UV-PDs based on simple thin-film-ZnO structure strongly desirable for various optoelectronic applications.
关键词： Self-powered,ZnO,Annealing,Solar-blind,UV photodetectors,RF sputtering
更新于2025-09-16 10:30:52
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3D Solar‐Blind Ga <sub/>2</sub> O <sub/>3</sub> Photodetector Array Realized Via Origami Method
摘要： A 3D solar-blind photodetector array is realized from amorphous Ga2O3 films grown on polyethylene terephthalate substrates via an origami route. The photodetector cells exhibit a dark current of 0.17 nA, and the peak responsivity is about 8.9 A W?1 at 250 nm with a quantum efficiency of 4450%. The photodetector shows a distinct cut-off wavelength at 268 nm with a solar-blind ratio of more than two orders of magnitude (photocurrent ratio between 250 nm/300 nm). The photodetector cells reveal excellent electrical stability after thousands of bending cycles. All the photodetector cells of the 3D photodetector array have a highly consistent performance. In addition, the device can execute the functions of capturing a real-time light trajectory and identifying multipoint light spatial distribution, which cannot be achieved in all the previously reported 2D solar-blind photodetectors. The results suggest new pathways to fabricate 3D photodetectors from conventional semiconductor films, which may find potential applications in optical positioning, tracking, imaging and communications, etc.
关键词： 3D photodetector,solar-blind photodetector,amorphous Ga2O3,origami
更新于2025-09-11 14:15:04
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Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction
摘要： We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (111) plane orientation was deposited on the β-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the γ-CuI/β‐Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the γ-CuI layer. The UV irradiation-induced photovoltaic action in the γ-CuI/β‐Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications.
关键词： Semiconductors,Electrical properties,Photovoltaic action,Copper iodide,Beta-gallium oxide,Solar-blind radiation
更新于2025-09-11 14:15:04
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Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga2O3 Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Seperation Interface of Photogenerated Carriers
摘要： Solar-blind photodetectors have been widely developed because of their great potential application in biological analysis, ultraviolet communication, and so on. Photodetectors constructed by vertically aligned nanorod arrays (NRAs), have attracted intensive interest recently owing to the virtues of low light reflectivity and rapid electron transport. However, limited by the insufficient contact between the upper electrode and NRAs because of uneven NRAs, photo-generated carriers cannot be effectively separated and transferred. In this work, a novel photoelectrochemical (PEC) type self-powered solar-blind photodetectors constructed in the form of Ga2O3 NRAs/electrolyte solid/liquid heterojunction with a large photogenerated carrier separation interface has been fabricated, β-Ga2O3 NRAs PEC photodetector shows a photoresponsivity of 3.81 mA/W at a bias voltage of 0 V under the 254 nm light illumination with the light intensity of 2.8 mW/cm2, thus yielding a Iphoto/Idark ratio of 28.97 and an external quantum efficiency of 1.86 %. Our results provide a novel device structure of solar-blind photodetector with high efficient deep-ultraviolet photodetection and low power consumption.
关键词： photoelectrochemical,Ga2O3 NRAs,solid-liquid heterojunction,solar-blind photodetectors,self-powered
更新于2025-09-11 14:15:04