- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs <sub/>1a??x</sub> Sb <sub/>x</sub> superlattice photodetector by MOCVD
摘要： We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1?xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 Ω cm2 and a dark current density of 9.6 × 10?8 A/cm2 under an applied bias of ?20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10?6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.
关键词： specific detectivity,metal-organic chemical vapor deposition,type-II InAs/InAs1?xSbx superlattices,quantum efficiency,Zn-diffused planar mid-wavelength infrared photodetector
更新于2025-09-23 15:19:57
-
High Sensitivity Visible-Near Infrared Organic Photodetector Based on Non-fullerene Acceptor
摘要： Highly sensitive solution-processed organic photodetectors (OPDs) with a broadband response ranging from visible to near infrared (NIR) and excellent overall device performance are demonstrated. The OPDs were fabricated from a blend consisting of a wide bandgap polymer donor and a newly developed fused octacylic small-molecule electron acceptor with acceptor–donor–acceptor structure, which shows relatively high and balanced hole/electron mobility and allow for thicker photoactive layer (~300 nm). In conjunction with the use of an optimized inverted device structure, the dark current density of the OPDs was suppressed to an ultralow level of (8.3±5.5)×10-10A cm-2 at bias of –1 V and the capability to directly weak light intensity is down to 0.24 pW cm?2, both are among the lowest reported values for OPDs. Owing to the low shot noise enabled by the inverted structure and the low thermal noise due to the high shunt resistance of the device, the obtained OPDs shows spectrally flat photoresponse in the range of 350–950 nm (UV-Vis-NIR) and a maximal specific detectivity (D*) of (2.1±0.1)×1013 Jones at 800–900 nm, which is among the best results of NIR OPDs reported to date and represents a highly sensitive photodetector for weak optical signal detection. Besides, the OPDs shows a wide bandwidth of 30 kHz, fast temporal response time around 12 us ~14 us and a large linear dynamic range of 106 dB.
关键词： dark current density,specific detectivity,non-fullerene acceptors,weak optical signal detection,organic photodetectors
更新于2025-09-23 15:19:57
-
SbSI microrod based flexible photodetectors
摘要： In this paper, SbSI microrods is prepared by using a simple hydrothermal method via sulfur powder as sulfur source. The as-synthesized SbSI microrods with sulfur as sulfur powder source has better flexibility than that of SbSI with thiourea as sulfur source due to decreasing force constant between Sb and S atom. SbSI microrod based flexible photodetectors exhibit higher specific detectivity of up to 5.43×1010 Jones, fast response speed (rise time and fall time of 61 ms and 128 ms, respectively) and also show low dark current less than 50 pA. Especially, the photoresponse performance of the SbSI microrod based flexible photodetectors are almost unchanged after different bending curvatures and bending times more than 2000 times.
关键词： higher specific detectivity,fast response speed,SbSI microrods,flexible photodetector
更新于2025-09-23 15:19:57
-
Industrial Applications of Nanomaterials || Nanomaterials-based UV photodetectors
摘要： Photodetectors are essential elements applied in video imaging, optical communications, biomedical imaging, security, night-vision, gas sensing, and motion detection, which possess the ability to transform light into electrical signals precisely. As the scale and diversity of application areas are growing, the need for innovative photodetection platform technologies with higher performance in terms of speed, efficiency or wavelength range, as well as material flexibility, transparency, and complementary metal-oxide-semiconductor (CMOS) integrability, is becoming more critical. In the past decades, extensive efforts have been devoted to explore the next generation of photodetector materials, such as In2Te3, ZnO, and GaN, with low noise, high photosensitivity, and good stability. However, many of these novel photodetector materials still suffer from limited photocurrent and photoresponse speed.
关键词： Nanomaterials,Schottky contacts,photoconductive gain,photodetection mechanism,photoresistors,linear dynamic range,responsivity,external quantum efficiency,photodiodes,specific detectivity,UV photodetectors
更新于2025-09-19 17:13:59
-
Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors
摘要： Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-system and ultrafast carrier transfer of micro-system, have shown promising role in high-performance photodetectors. Here, in this paper a highly-sensitive trilayer in which the CdS nanorods (NRs) layer is sandwiched between ZnO/CsPbBr3 interface to reduce self-powered perovskite-based photodetector ITO/ZnO(70nm)/CdS(150nm)/CsPbBr3(200nm)/Au, ratio of 106 with a responsivity of 86 mA/W and a specific detectivity of 6.2×1011 Jones was obtained at zero bias under 85 μW/cm2 405 nm illumination, and its rise/decay time at zero bias is to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current 0.3/0.25 s. Therefore, the enhanced device performance strongly suggest the great potential of such the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due a kind of trilayer heterojunction devices for high-performance perovskite photodetectors.
关键词： On/Off current ratio,CdS nanorods (NRs) layer,trilayer heterojunction,specific detectivity,gradient energy alignment,Self-powered photodetector,high-performance
更新于2025-09-19 17:13:59
-
High‐Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets
摘要： 2D transition-metal dichalcogenides have attracted significant interest in recent years due to their multiple degrees of freedom, allowing for tuning their physical properties via band engineering and dimensionality adjustment. The study of ternary 2D hafnium selenosulfide HfSSe (HSS) high-quality single crystals grown with the chemical vapor transport (CVT) technique is reported. An as-grown HSS single crystal exhibits excellent phototransistor performance from the visible to the near-infrared with outstanding stability. A giant photoresponsivity (≈6.4 × 104 A W?1 at 488 nm) and high specific detectivity (≈1014 Jones) are exhibited by a device fabricated by exfoliating single-crystal HSS of nano-thickness on a rigid Si/SiO2 substrate. The application of HSS single crystal is extended to yield a sensible flexible photodetector of photoresponsivity up to ≈1.3 A W?1 at 980 nm. The photoresponsivity of CVT-grown HSS single crystal is significantly larger than those fabricated with other existing Hf-based chalcogenides. The results suggest that the layered multi-elemental 2D chalcogenide single crystals hold great promise for future wearable electronics and integrated optoelectronic circuits.
关键词： crystal growth,photoresponsivity,transition metal dichalcogenides,flexible optoelectronics,specific detectivity
更新于2025-09-19 17:13:59
-
[IEEE 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) - Zatoka, Ukraine (2018.9.9-2018.9.14)] 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) - Semi-transparent UV Photodetectors Based on the Nanostructured n-ZnO/p-CuI and n-ZnO/p-NiO Diode Heterojunctions Prepared by Low Temperature Solution Growth
摘要： In this work we investigate wide band-gap bipolar diode nanostructured heterojunctions prepared by low temperature solution growth. The crystal structure and optical properties of the pulsed electrodeposited zinc oxide nanorod arrays and nickel oxide and copper iodide films grown via Successive Ionic Layer Adsorption and Reaction (SILAR) technique, and also diode parameters and photoelectric characteristics of the heterojunctions show that they are promising for a fabrication of low cost and portable semi-transparent photodetectors of soft ultraviolet light.
关键词： ultraviolet photodetector,copper iodide,nickel oxide,nanocrystal structure,specific detectivity,zinc oxide
更新于2025-09-16 10:30:52