- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing
摘要： The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides. The effect of silicon-hydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed. The micro-migration from an upper state to a lower state of silicon atoms is driven by silicon-hydrogen bonding, which is the key to ameliorate the rough surface morphology of the silicon-based waveguide. The process of hydrogen annealing is experimentally validated based on the simulated parameters. The surface roughness declines from 1.523 nm to 0.461 nm.
关键词： surface smoothing,silicon-based waveguide,silicon-hydrogen bonds,hydrogen annealing,surface roughness
更新于2025-09-16 10:30:52
-
Surface smoothing of poly(methyl methacrylate) film by laser induced photochemical etching
摘要： The surface of poly(methyl methacrylate) (PMMA) ?lm was etched by laser irradiation under O2 and vacuum conditions. By activating the O2 molecules near the rough surface, oxygen radicals will preferably etch the protrusions on the PMMA surface. Three lasers of different wavelengths were used for comparison. Laser irradiation at a short wavelength such as 325 nm resulted in high etch rates whereas a long wavelength such as 532 nm resulted in no effect on the surface pro?le. The PMMA surface was not etched under the vacuum condition, indicating the necessity of O2 molecules in etching.
关键词： surface smoothing,wavelength dependence,oxygen radicals,poly(methyl methacrylate),laser induced photochemical etching
更新于2025-09-16 10:30:52
-
Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching
摘要： The synergetic effects of surface smoothing exhibited during the inductively coupled plasma reactive ion etching (ICP-RIE) of free-standing polycrystalline diamonds (PCDs) were investigated. Changing the assistive gas types generated variable surface oxidation states and chemical environments that resulted in different etching rates and surface morphologies. The main reaction bond mechanism (C–O) during ICP-RIE and the ratio of C–O–C/O–C=O associated with the existence of a uniform smooth surface with root mean square (RMS) roughness of 2.36 nm were observed. An optimal process for PCD smoothing at high etching rate (4.6 lm/min) was achieved as follows: 10% gas additions of CHF3 in O2 plasma at radio frequency power of 400 W. The further etched ultra-smooth surface with RMS roughness <0.5 nm at etching rate of 0.23 lm/min that being produced by transferring this optimum recipe on single crystal diamonds with surface patterns confirmed the effectiveness of the fast smoothing approach and its feasibility for diamond surface patterning.
关键词： surface smoothing,diamond,etching rate,ICP-RIE,surface morphology
更新于2025-09-12 10:27:22