研究目的
Investigating the synergetic effects of surface smoothing during the inductively coupled plasma reactive ion etching (ICP-RIE) of free-standing polycrystalline diamonds (PCDs) and optimizing the process for high etching rates and smooth surfaces.
研究成果
The study demonstrated that adding CHF3 to O2 plasma at an RF power of 400 W is optimal for achieving smooth diamond surfaces at high etching rates. The process was also successfully applied to SCDs, confirming its effectiveness for diamond surface patterning.
研究不足
The study focused on specific gas mixtures and RF powers, and the results may not be generalizable to all diamond types or etching conditions. The use of HPHT diamonds with inherent defects may also affect the outcomes.
1：Experimental Design and Method Selection:
The study involved the use of ICP-RIE for etching PCDs under different gas system conditions to investigate the effects on surface smoothing and etching rates.
2：Sample Selection and Data Sources:
Synthetic PCDs and HPHT Ib (100) SCDs were used. The PCDs were prepared by a home-built 100 kW DC arc-jet plasma CVD.
3：List of Experimental Equipment and Materials:
Equipment included an ICP-RIE etching system (SENTECH/SI-500), field emission scanning electron microscope (HITACHI S4800), laser scanning confocal microscope (Olympus), and atomic force microscopy (ASYLUM-RESEARCH, HVA220). Materials included oxygen, CHF3, CF4, and Cl2 gases.
4：0). Materials included oxygen, CHF3, CF4, and Cl2 gases. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The diamonds were etched under various gas mixtures and RF powers, followed by characterization of surface morphology, etching rates, and chemical states.
5：Data Analysis Methods:
Data were analyzed using Raman spectroscopy, XPS, and AFM to determine surface quality, chemical states, and roughness.
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