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[IEEE 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Budapest, Hungary (2018.8.26-2018.8.30)] 2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC) - Impact of the Different Parasitic Inductances on the Switching Behavior of SiC MOSFETs
摘要： This paper experimentally investigates into the effects of parasitic inductances on the switching performance of a SiC MOSFET halfbridge. As the switching dynamics of wide-bandgap power semiconductors are by magnitudes larger compared to silicon devices, the parasitic elements in the switching cell become increasingly important, as they limit the current and voltage slopes and cause oscillations. A thorough understanding of those effects is necessary for the design of highly efficient and integrated next-generation power electronic converters. An implementation method to realize cheap and well-reproducible variable inductors in the nanohenry range is presented. Furthermore, a test PCB equipped with SiC MOSFETs is built and double pulse experiments are carried out under the variation of all relevant inductances in the switching cell. The results are analyzed with respect to the switching performance and differences between the switching transients of Si and SiC devices are demonstrated and explained with respect to the parasitic elements.
关键词： switching performance,power electronics,parasitic inductances,double pulse experiments,SiC MOSFET
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter
摘要： In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.
关键词： 10 kV SiC MOSFET,parasitic capacitor,switching performance
更新于2025-09-04 15:30:14