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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
摘要： Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to ~40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input–output characteristics. The performances of ROs indicate small stage delay of ~1 μs, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
关键词： CMOS,oxide semiconductor,thin-film transistor (TFT),IC
更新于2025-09-23 15:22:29
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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
摘要： Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).
关键词： thin-film transistor (TFT),positive gate bias stress (PGBS),passivation layer,characteristic length,amorphous InGaZnO (a-IGZO)
更新于2025-09-23 15:21:21
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Vertically integrated, double stack oxide TFT layers for higha??resolution AMOLED backplane
摘要： We developed a novel vertically integrated, double stack oxide thin-film transistor (TFT) backplane for high-resolution organic light-emitting diode (OLED) displays. The first TFT layer is bulk-accumulation mode, and the second TFT layer is a single gate with back-channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm2/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane.
关键词： double stack structures,oxide,high definition,thin-film transistor (TFT),high resolution
更新于2025-09-23 15:21:01
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[IEEE 2019 International Energy and Sustainability Conference (IESC) - Farmingdale, NY, USA (2019.10.17-2019.10.18)] 2019 International Energy and Sustainability Conference (IESC) - Methodology for the implementation of photovoltaic energy in a microgrid
摘要： A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 s, the pixel circuit was able to compensate for a 3 V threshold voltage ( ) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.
关键词： Active-matrix organic light-emitting diode (AMOLED),compensation,oxide thin-film transistor (TFT),amorphous silicon (a-Si)
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - High reliability InGaZnO TFT by inductively coupled plasma sputtering system
摘要： The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems, we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.
关键词： thin-film transistor(TFT),inductively coupled plasma (ICP) sputtering,InGaZnO (IGZO),reliability
更新于2025-09-16 10:30:52
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24.1: <i>Invited Paper:</i> Flexible Oxide TFTs for Bendable and flexible displays
摘要： We review in this talk the highly stable, high performance E/S a-IGZO TFT on plastic substrate by using split active and S/D electrodes. The TFTs exhibit high mobility of 74 cm2/Vs and extremely stable behavior under bias-stress and mechanical stress. The TFT process is same as conventional one with only design change. Therefore, this technology can be used for the manufacturing of flexible and bendable AMOLED on plastic substrate
关键词： thin-film transistor (TFT),high mobility,Oxide,split
更新于2025-09-10 09:29:36
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Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
摘要： A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and ?40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.
关键词： thin film transistor (TFT),wide temperature,high reliability,gate driver,amorphous silicon (a‐Si)
更新于2025-09-09 09:28:46
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30.1: Transparent Basic Logic Circuits with ITO-Stabilized ZnO Thin Film Transistors
摘要： Transparent basic logic circuits integrated by indium tin oxide(ITO)-stabilized ZnO thin film transistors(TFTs) are successfully fabricated on glass substrate. ITO-stabilized ZnO thin films with hybrid-phase microstructure are employed as active layers in the bottom-contact top-gated TFTs. We fabricate 13-stages ring oscillator (RO) with diode-load and pseudo-CMOS inverter respectively in order to tell the difference between those two schemes. The pseudo-CMOS RO exhibits 7V voltage swing and 42kHz oscillation frequency while the diode-load RO exhibiting 3.3V and 71kHz under the same supply voltage of 20V. Meanwhile, basic digital circuits like NOR gates and D flip flops with pseudo-CMOS scheme are also fabricated and they are logically correct. Those logic gates exhibit a typical high level of 4.3V, low level of 200mV and maximum operating frequency of nearly 10kHz under the 10V supply voltage. The transmittance of the chip is 80% to 90% in a 380-nm to 800-nm wavelength.
关键词： Transparent Basic Logic Circuits,ITO-Stabilized ZnO,Thin Film Transistor(TFT)
更新于2025-09-09 09:28:46