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Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs
摘要： In nanoscale fully depleted silicon-on-insulator (FD-SOI) MOSFETs, the standard deviation of threshold voltage (σVth) caused by random dopant fluctuation (RDF) is an important parameter to predict the performance of transistors and circuits. In this paper, an analytic model of σVth considering both the dopant 'number' and dopant 'position' fluctuation in channels is proposed. A new model of σVth,num caused by 'number' is given and the method of obtaining the 'position' influence ratio Rp is discussed in this paper. Moreover, the simulation methods are analyzed in detail. The calculated σVth values in FD-SOI MOSFETs are compared with the Sentaurus TCAD simulation results at different channel lengths, channel doping concentrations, SOI film thicknesses, front gate oxide thicknesses, and buried-oxide thicknesses. The comparison shows that the proposed model matches well with the obtained numerical simulation results.
关键词： threshold voltage variation,analytical model,fully depleted silicon-on-insulator MOSFETs,Sentaurus TCAD simulation,random dopant fluctuation
更新于2025-09-23 15:22:29
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A Pixel Circuit With Wide Data Voltage Range for OLEDoS Microdisplays With High Uniformity
摘要： A new pixel circuit is proposed for the realization of high resolution and high uniformity organic light-emitting diode on silicon (OLEDoS) microdisplays in this article. A compensation scheme is adopted to mitigate the influence of threshold voltage variation of the driving transistor on display uniformity. Furthermore, two coupling capacitors are used to reduce the voltage at the gate terminal of the driving transistor in order to extend the data voltage range. The performance of the proposed pixel circuit is verified in an industrial 0.18-μm CMOS process. Simulation results show that the data voltage of the proposed pixel circuit ranges from 0.5 to 3.12 V, which is up to 4.37× wider than the previously published pixel circuits. The emission current error of the proposed pixel circuit varies from ?2.1% to 2.08%, under the condition of ±5 mV threshold voltage variation for the driving transistor. The maximum emission current error changes from ?10.36% to ?2.62% when the OLED turn-on voltage is increased by 5 to 20 mV due to device aging. Furthermore, the proposed pixel circuit only occupies a layout area of 8.1 μm × 4 μm.
关键词： Aging,high uniformity,compensation,organic light-emitting diode on silicon (OLEDoS),threshold voltage variation
更新于2025-09-16 10:30:52