摘要： A new pixel circuit is proposed for the realization of high resolution and high uniformity organic light-emitting diode on silicon (OLEDoS) microdisplays in this article. A compensation scheme is adopted to mitigate the influence of threshold voltage variation of the driving transistor on display uniformity. Furthermore, two coupling capacitors are used to reduce the voltage at the gate terminal of the driving transistor in order to extend the data voltage range. The performance of the proposed pixel circuit is verified in an industrial 0.18-μm CMOS process. Simulation results show that the data voltage of the proposed pixel circuit ranges from 0.5 to 3.12 V, which is up to 4.37× wider than the previously published pixel circuits. The emission current error of the proposed pixel circuit varies from ?2.1% to 2.08%, under the condition of ±5 mV threshold voltage variation for the driving transistor. The maximum emission current error changes from ?10.36% to ?2.62% when the OLED turn-on voltage is increased by 5 to 20 mV due to device aging. Furthermore, the proposed pixel circuit only occupies a layout area of 8.1 μm × 4 μm.