研究目的
Investigating the impact of BEOL design on device and backend reliability due to dependence of self-heating on BEOL in highly-scaled FinFETs.
研究成果
The analysis indicates that significant portion of heat generated due to self-heating flows through vias and large via density is important for reduction of device temperature. The reduction of backend thermal resistance is important for mitigation of electro-migration. The optimization of BEOL designs increases the reliability margin.
研究不足
The study focuses on highly-scaled FinFETs, and the findings may not be directly applicable to other types of devices or technologies.
1：Experimental Design and Method Selection:
Well-calibrated TCAD and 3D FEM solver (Sentaurus Interconnect) were used to simulate SH in FEOL and BEOL. The spherical harmonics expansions (SHE) solver of Boltzmann transport equation (BTE) was used in the device simulation.
2：Sample Selection and Data Sources:
The analysis is for a large inverter cell – multi-fin and multi-finger inverter – at high bias values.
3：List of Experimental Equipment and Materials:
TCAD and 3D FEM solver (Sentaurus Interconnect), Cadence-RelXpert.
4：Experimental Procedures and Operational Workflow:
The structure was simulated with three different top metal levels – M1, M2, and M
5：Dirichlet boundary condition of T=300K was assumed at top-metal and substrate. Data Analysis Methods:
The impact of self-heating on device aging (BTI and HCI) was analyzed using Cadence-RelXpert with modified simulation flow.
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