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Doping induced performance enhancement in inverted small molecule organic photodiodes operating below 1V reverse bias - Towards compatibility with CMOS for imaging applications
摘要： Organic photodiodes (OPDs) offer a myriad of advantages over conventional inorganic photodetectors, making them particularly attractive for imaging application. One of the key challenges preventing their utilization is the need for their integration into the standard CMOS processing. Herein, we report a CMOS-compatible top-illuminated inverted small molecule bi-layer OPD with extremely low dark leakage current. The device utilizes a titanium nitride (TiN) bottom electrode modified by a [6,6]-phenyl C61 butyric acid methyl ester (PCBM) cathode buffer layer (CBL). We systemetically show that doping the CBL enhances device's low voltage (below 1 V reverse bias) photoresponse by increasing the linear dynamic range (LDR) and making the bandwidth of the photodidoe broader without compromising the leakage current. The optimized device exhibits a dark leakage current of only ~ 6 x 10-10 A/cm2 at -0.5 V. The external quantum efficiency (EQE) at 500 nm reaches 23% with a calculated specific detectivity as high as 7.15 x 1012 cm Hz1/2/W (Jones). Also the LDR approaches 140dB and the bandwidth is about 400kHz, at -0.5 V bias. The proposed device structure is fully compatible with CMOS processing and can be integrated onto a CMOS readout circuit offering the potential to be applied in high-performance large-scale imaging arrays.
关键词： Interface engineering,Doping,CMOS,Titanium nitride,Organic photodiode,Cathode buffer layer
更新于2025-09-23 15:23:52
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Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging
摘要： We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature Tc, sheet resistance Rs and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt ≈ 2.3 × 10?15 W/√Hz, which is promising for passive terahertz imaging applications.
关键词： Titanium nitride,ALD,Kinetic inductance detector
更新于2025-09-23 15:22:29
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Atomic layer deposition of titanium nitride for quantum circuits
摘要： Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9–110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/(cid:2). For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.2 to 1.0 (cid:2) 106 and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kX, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 X resonator, transformative for hybrid quantum systems and quantum sensing.
关键词： superconducting thin films,atomic layer deposition,quantum circuits,titanium nitride,kinetic inductance
更新于2025-09-23 15:21:21
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Determining Plasmonic Hot Electron and Photothermal Effects during H <sub/>2</sub> Evolution with TiN-Pt Nanohybrids
摘要： Hydrogen storage in chemical compounds is a promising strategy to enable lightweight, high density, and safe hydrogen technologies. However, the hydrogen release rate from these chemicals is limited by the intrinsic catalytic activity of metal catalysts, which can be enhanced by using light irradiation. Here nanohybrids including a core of plasmonic TiN and multiple Pt nanocrystal catalytic centers are assembled and show, under resonant conditions at 700 nm, hot electrons driven hydrogen evolution from ammonia borane at an apparent quantum yield of 120%. It is also demonstrated that solar irradiation enhances the activity of TiN-Pt nanohybrids by one order of magnitude through two synergistic mechanisms: the hot electrons and collective-heating contributions. Using the microscopic calculation of the photoinduced temperature around a single nanocrystal, it is revealed that the collective plasmonic heating regime dominates the macroscopic temperature distribution in the system. The presented data show that plasmonic hot electrons and photothermal heating can be used in synergy to trigger hydrogen release from ammonia borane on demand, providing a general strategy for greatly enhancing the activity in the dark of metal catalysts.
关键词： ammonia-borane,plasmonics,photocatalysis,titanium nitride,hydrogen evolution
更新于2025-09-23 15:21:01
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Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
摘要： The authors report on the role of various reactive gases on the structure and properties of TiN thin films prepared by plasma enhanced atomic layer deposition (PEALD) from tetrakis(dimethylamido) titanium. The reactive gas plays an important role determining the film structure and properties. Nitrogen-based plasma (N2 and NH3) resulted in low oxygen (~3%) and carbon (~2%) contamination and well-defined columnar grain structure. A nitrogen excess (~4%) was found in the films deposited using N2 plasma. The stoichiometric films and lowest resistivity (~80 μΩ cm) were achieved using NH3 plasma. Deposition using H2 plasma resulted in higher carbon and oxygen contamination (~6% for each element). The reactive gas also plays an important role in determining the grain size and preferential orientation. By varying the plasma chemistry, either (111) or (100) oriented films can be obtained. A mechanism determining the PEALD TiN preferential orientation is proposed. Finally, plasma induced degradation of the underlying dielectric layer is evaluated.
关键词： plasma enhanced atomic layer deposition,film structure,properties,titanium nitride,reactive gases
更新于2025-09-23 15:21:01
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Plasmonic titanium nitride via atomic layer deposition: A low-temperature route
摘要： To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire grown by plasma-enhanced atomic layer deposition. TiN with low losses, high metallicity, and a plasma frequency below 500 nm was achieved at temperatures less than 500 °C by exploring the effects of chemisorption time, substrate temperature, and plasma exposure time on the material properties. A reduction in chemisorption time mitigates premature precursor decomposition at TS > 375 °C, and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25 s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450 °C, compatible with CMOS processes, with 0.5 s chemisorption time and 25 s plasma exposure exhibited a high plasmonic figure of merit (jε0/ε00j) of 2.8 and resistivity of 31 μΩ cm. As a result of the improved quality, subwavelength apertures were fabricated in the TiN thin films and are shown to exhibit extraordinary transmission.
关键词： plasmonic figure of merit,CMOS compatible,low-temperature route,atomic layer deposition,plasmonic titanium nitride
更新于2025-09-23 15:19:57
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Tunable Plasmonic Resonances in TiN Nanorod Arrays
摘要： In this work, titanium nitride (TiN) nanorod arrays were fabricated using glancing angle deposition in a magnetron sputtering system. The deposition parameters, including the bias on the substrate and the flow rate of nitrogen, were varied to deposit various TiN nanorod arrays. Before glancing angle deposition was conducted, uniform TiN films were deposited and their permittivity spectra, for various deposition parameters, were obtained. The effect of the deposition parameters on the morphology of the nanorods is analyzed here. The polarization-dependent extinctance spectra of TiN nanorod arrays were measured and compared. Extinction, which corresponds to the longitudinal mode of localized surface plasmon resonance, can be significantly changed by tuning the N2 flow rate and substrate bias voltage during deposition.
关键词： glancing angle deposition,plasmonic mode,permittivity,titanium nitride,nanorod array
更新于2025-09-23 15:19:57
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Stabilizing the Plasmonic Response of Titanium Nitride Nanocrystals with a Silicon Oxynitride Shell: Implications for Refractory Optical Materials
摘要： We discuss the synthesis and properties of nanoparticles and thin films for refractory plasmonic applications. The approach focuses on titanium nitride (TiN), which overcomes the limitations of more common plasmonic materials like silver and gold with respect of temperature stability. Free-standing TiN-based nanoparticles are produced in two serially connected plasma reactors, where TiN nanocrystals are nucleated in a first plasma stage, then aerodynamically dragged in a second stage and conformally coated with a silicon nitride layer. An in-depth comparison between bare and coated TiN nanoparticles is presented in terms of the structural, chemical and optical properties. Coating of the titanium nitride core reduces its oxidation upon exposure to air, drastically improving plasmonic response. Thin films realized using the core-shell structure show practically no change in reflectivity even when the thin films are heated to 900°C in an inert atmosphere. This study introduces a simple surface passivation schemes that enhances the functionality of the material, providing further confirmation of the potential of nitride-based plasmonic material as high-quality refractory optical compounds for a broad range of applications.
关键词： Titanium nitride,Non-thermal plasma,Thin films,Nanocrystals,Refractory nanomaterials,Plasmonic nanomaterials
更新于2025-09-23 15:19:57
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Largea??Scale Plasmonic Hybrid Framework with Builta??In Nanohole Array as Multifunctional Optical Sensing Platforms
摘要： Light coupling with patterned subwavelength hole arrays induces enhanced transmission supported by the strong surface plasmon mode. In this work, a nanostructured plasmonic framework with vertically built-in nanohole arrays at deep-subwavelength scale (6 nm) is demonstrated using a two-step fabrication method. The nanohole arrays are formed first by the growth of a high-quality two-phase (i.e., Au–TiN) vertically aligned nanocomposite template, followed by selective wet-etching of the metal (Au). Such a plasmonic nanohole film owns high epitaxial quality with large surface coverage and the structure can be tailored as either fully etched or half-way etched nanoholes via careful control of the etching process. The chemically inert and plasmonic TiN plays a role in maintaining sharp hole boundary and preventing lattice distortion. Optical properties such as enhanced transmittance and anisotropic dielectric function in the visible regime are demonstrated. Numerical simulation suggests an extended surface plasmon mode and strong field enhancement at the hole edges. Two demonstrations, including the enhanced and modulated photoluminescence by surface coupling with 2D perovskite nanoplates and the refractive index sensing by infiltrating immersion liquids, suggest the great potential of such plasmonic nanohole array for reusable surface plasmon-enhanced sensing applications.
关键词： modulated photoluminescence (PL),refractive index (RI) sensing,titanium nitride (TiN),surface plasmons (SPs),plasmonic nanoholes (NHs)
更新于2025-09-23 15:19:57
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Synthesis of TiN, Ti, and TiSi2 Thin Films for the Contact System of Solar Cells
摘要： The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N2 gas flow rate 0.9–3.6 L/h, the Ar gas flow rate 0.06?3.6 L/h, the ratio of N2/Ar gas flows 1–60 on the thickness, the density, and the composition of the deposited films is analyzed. The maximum density 5.247 g/cm3 corresponding to the TiN0.786 = Ti56N44 composition has been achieved at the following deposition parameters: 1200 W, N/Ar = 1.8/0.06 L/h = 30, 0.8 Pa, 320 s, and 100°C. At temperatures 700–800°C, the mutual diffusion of titanium and silicon atoms through the interface leads to the active nucleation, the formation of nanocrystals and low-resistance metallization layers. X-ray diffraction shows that, during annealing at 700°C (30 min, Ar), the formation of phase TiSi2 due to the diffusion of Ti atoms into silicon is twice more intense than the formation of Ti5Si3 due to the diffusion of silicon atoms into titanium as a result of high hardness of titanium. The average sizes of TiSi2 decreases from 7.1 to 5.6 nm at 750°C due to the crystallization of the nuclei and increase to 9.2 nm at 800°C.
关键词： solar cell,diffusion barrier,titanium,silicon,titanium nitride
更新于2025-09-19 17:13:59