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Two-Dimensional Materials and Their Role in Emerging Electronic and Photonic Devices
摘要： As the scaling of semiconducting devices in integrated circuits approaches dimensions less than 10 nm, the emphasis for future technologies has moved towards improved energy efficiency and the use of three dimensional (3D) integration schemes to achieve an increased density of devices per unit area. For many of these applications there is a need to explore new semiconducting materials which allow flexibility in electronic and optical properties, and can also be processed at reduced temperatures, which allows their integration above conventional silicon based integrated circuits. One class of materials that demonstrates considerable promise for these emerging applications is van der Waals bonded two dimensional (2D) semiconductors. The study of these 2D layered material systems is not new, with studies dating back to the 1920s and the identification of monolayers and bi-layers of MoS2 in the 1960s. What is particularly exciting about this general class of semiconductors is that they have a range of energy gaps which span from semi-metals through to wide bandgap semiconductors and as a consequence have potential applications in electronic devices, sensors, through to applications in flexible electronics, photovoltaics, and the light emitting diodes.
关键词： Two-Dimensional Materials,Semiconductors,Electronic Devices,Van der Waals,Photonic Devices
更新于2025-09-04 15:30:14
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for UltraLow Power Logic Applications
摘要： New designs for vertical 2D-materials-based TFETs are proposed in this paper adopting asymmetric layer numbers for the top and bottom layer with undoped source/drain using Black Phosphorus as an example. The results show that abrupt turn-on and Ion/Ioff > 105 can be sustained when the channel length is down to sub-5 nm. The results are benchmarked against other TFETs based on promising 2D materials homo-/hetero-structures, meanwhile, the limitations, as well as guidelines, are presented.
关键词： DFT,tunnel FETs,Non-equilibrium Green’s Function,TMDCs,black phosphorus,Two-dimensional Materials Heterojunctions
更新于2025-09-04 15:30:14
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[Springer Theses] Properties of Synthetic Two-Dimensional Materials and Heterostructures || Properties of Atomically Thin WSe2 Grown Via Metal-Organic Chemical Vapor Deposition
摘要： Two-dimensional tungsten diselenide (WSe2) is of interest for the next-generation electronic and optoelectronic devices due to its bandgap of 1.65 eV and also its excellent transport properties. However, technologies based on 2D WSe2 cannot be realized without a scalable synthesis process. The first part of this chapter focuses on the scalable synthesis for large-area, mono, and few-layer WSe2 via metal organic chemical vapor deposition (MOCVD) using tungsten hexacarbonyl (W(CO)6) and dimethylselenium ((CH3)2Se). In addition to the excellent scalability of production, this technique allows for the precise control of vapor-phase chemistry, which is not obtainable though the physical vapor reaction using powder precursors. Growth parameters such as temperature, pressure, Se to W ratio, and selection of the substrates for the growth play important roles on the resultant structure. With optimized conditions, domain size >8 μm is yielded.
关键词： electronic devices,WSe2,epitaxial growth,MOCVD,two-dimensional materials
更新于2025-09-04 15:30:14
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Wafer-sized ultrathin gallium and indium nitride nanosheets through the ammonolysis of liquid metal derived oxides
摘要： We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm2V-1s-1, while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
关键词： ultrathin indium nitride,ultrathin gallium nitride,ammonolysis,two-dimensional materials,liquid metal derived oxides
更新于2025-09-04 15:30:14
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Stark shift of excitons and trions in two-dimensional materials
摘要： The effect of an external in-plane electric ?eld on neutral and charged exciton states in two-dimensional (2D) materials is theoretically investigated. These states are argued to be strongly bound, so that electron-hole dissociation is not observed up to high electric ?eld intensities. Trions in the anisotropic case of monolayer phosphorene are demonstrated to be especially robust under electric ?elds, so that ?elds as high as 100 kV/cm yield no signi?cant effect on the trion binding energy or probability density distribution. Polarizabilities of excitons are obtained from the parabolicity of numerically calculated Stark shifts. For trions, a fourth order Stark shift is observed, which enables the experimental veri?cation of hyperpolarizability in 2D materials, as observed in the highly excited states of the Rydberg series of atoms and ions.
关键词： Stark shift,polarizability,two-dimensional materials,electric field,excitons,trions,hyperpolarizability
更新于2025-09-04 15:30:14
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Reversible and selective ion intercalation through the top surface of few-layer MoS2
摘要： Electrochemical intercalation of ions into the van der Waals gap of two-dimensional (2D) layered materials is a promising low-temperature synthesis strategy to tune their physical and chemical properties. It is widely believed that ions prefer intercalation into the van der Waals gap through the edges of the 2D flake, which generally causes wrinkling and distortion. Here we demonstrate that the ions can also intercalate through the top surface of few-layer MoS2 and this type of intercalation is more reversible and stable compared to the intercalation through the edges. Density functional theory calculations show that this intercalation is enabled by the existence of natural defects in exfoliated MoS2 flakes. Furthermore, we reveal that sealed-edge MoS2 allows intercalation of small alkali metal ions (e.g., Li+ and Na+) and rejects large ions (e.g., K+). These findings imply potential applications in developing functional 2D-material-based devices with high tunability and ion selectivity.
关键词： defects,MoS2,electrochemical control,two-dimensional materials,ion intercalation
更新于2025-09-04 15:30:14