研究目的
To assess energy efficient alternative electrical switching elements, particularly steep subthreshold switch devices, for post-CMOS applications using two-dimensional materials.
研究成果
Undoped drain may be used for device operation and shows superior performance when the channel length is below 10 nm. The on-current can be boosted by increasing the number of layers for the source without severely affecting the off-current. Changing the channel orientation from zigzag to armchair direction can also effectively enhance the on-current.
研究不足
The need for improved device engineering and doping schemes to achieve good scalability beyond 9 nm BP TFET.
1：Experimental Design and Method Selection:
Utilizes a 10-band sp3d5s* 2nd nearest neighbor tight-binding model and ab-initio quantum simulation framework combining DFT and NEGF for electrical characterization.
2：Sample Selection and Data Sources:
Monolayer and multi-layer BP electronic structures calculated by DFT with HSE06 functional.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
Bloch functions transformed into TB-like Hamiltonians based on MLWFs for electron transport simulation.
5：Data Analysis Methods:
Quantum transmitting boundary method and 3D Poisson equation solved iteratively until self-consistency is achieved.
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